Abstract
The electrical characteristics of ultra-low temperature (below 100°C) SiO2 films, which are prepared by ICP-CVD methods using silane and oxygen as silicon dioxide precursor, were evaluated. The breakdown field of SiO2 shows as high as 7.8MV/cm2, and the lower flat band voltage of SiO2 is as low as -5V. Our ultra-low temperature process using both deposition of SiO2 by ICP-CVD and gate AI metal by thermal evaporation is fully compatible with plastic substrates such as PES (PolyEthereSulfone) and PEN (PolyEtherNaphtalene). This promising result is expected to the advanced Active matrix flexible display process.
| Original language | English |
|---|---|
| Pages | 1225-1226 |
| Number of pages | 2 |
| Publication status | Published - 2005 Dec 1 |
| Event | IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005 - Takamatsu, Japan Duration: 2005 Dec 6 → 2005 Dec 9 |
Other
| Other | IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005 |
|---|---|
| Country | Japan |
| City | Takamatsu |
| Period | 05/12/6 → 05/12/9 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
Cite this
Park, K., Lim, H., Kwon, J., Jung, J., Kim, D., Kim, J., & Noguchi, T. (2005). Ultra-low temperature (below 100°C) Si TFT process for flexible display. 1225-1226. Paper presented at IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005, Takamatsu, Japan.