Ultra-low temperature (below 100°C) Si TFT process for flexible display

Kyungbae Park, Hyuck Lim, Jangyeon Kwon, Jisim Jung, Doyoung Kim, Jongman Kim, Takashi Noguchi

Research output: Contribution to conferencePaper

Abstract

The electrical characteristics of ultra-low temperature (below 100°C) SiO2 films, which are prepared by ICP-CVD methods using silane and oxygen as silicon dioxide precursor, were evaluated. The breakdown field of SiO2 shows as high as 7.8MV/cm2, and the lower flat band voltage of SiO2 is as low as -5V. Our ultra-low temperature process using both deposition of SiO2 by ICP-CVD and gate AI metal by thermal evaporation is fully compatible with plastic substrates such as PES (PolyEthereSulfone) and PEN (PolyEtherNaphtalene). This promising result is expected to the advanced Active matrix flexible display process.

Original languageEnglish
Pages1225-1226
Number of pages2
Publication statusPublished - 2005
EventIDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005 - Takamatsu, Japan
Duration: 2005 Dec 62005 Dec 9

Other

OtherIDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005
CountryJapan
CityTakamatsu
Period05/12/605/12/9

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Park, K., Lim, H., Kwon, J., Jung, J., Kim, D., Kim, J., & Noguchi, T. (2005). Ultra-low temperature (below 100°C) Si TFT process for flexible display. 1225-1226. Paper presented at IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005, Takamatsu, Japan.