We studied the fabrication of poly-Si TFT (thin film transistor) by using excimer laser crystallization of sputtered a-Si film at below 200°C. We could obtain the precursor a-Si film with low impurity gas content of 0.39 % by using Xe sputtering and poly-Si film with maximum grain size of 1 μm. We successfully fabricated poly-Si TFT with a field-effect mobility of 70 cm 2/V·Sec on glass and 15 cm 2/V·sec on plastic by using ultra low temperature process at below 200°C, respectively.
|Journal||Journal of the Korean Physical Society|
|Issue number||SUPPL. 1|
|Publication status||Published - 2006 Jan 1|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)