Ultra-low temperature poly-Si thin film transistor for plastic substrate

Do Young Kim, Jang Yeon Kwon, Ji Sim Jung, Kyung Bae Park, Hans S. Cho, Huck Lim, Jong Man Kim, Huaxing Yin, Xiaoxin Zhang, Takashi Noguchi, Takashi Noguchi

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Abstract

We studied the fabrication of poly-Si TFT (thin film transistor) by using excimer laser crystallization of sputtered a-Si film at below 200°C. We could obtain the precursor a-Si film with low impurity gas content of 0.39 % by using Xe sputtering and poly-Si film with maximum grain size of 1 μm. We successfully fabricated poly-Si TFT with a field-effect mobility of 70 cm 2/V·Sec on glass and 15 cm 2/V·sec on plastic by using ultra low temperature process at below 200°C, respectively.

Original languageEnglish
Pages (from-to)S61-S63
JournalJournal of the Korean Physical Society
Volume48
Issue numberSUPPL. 1
Publication statusPublished - 2006 Jan 1

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Kim, D. Y., Kwon, J. Y., Jung, J. S., Park, K. B., Cho, H. S., Lim, H., Kim, J. M., Yin, H., Zhang, X., Noguchi, T., & Noguchi, T. (2006). Ultra-low temperature poly-Si thin film transistor for plastic substrate. Journal of the Korean Physical Society, 48(SUPPL. 1), S61-S63.