Ultra-low temperature poly-Si thin film transistor for plastic substrate

Do Young Kim, Jang Yeon Kwon, Ji Sim Jung, Kyung Bae Park, Hans S. Cho, Huck Lim, Jong Man Kim, Huaxing Yin, Xiaoxin Zhang, Takashi Noguchi, Takashi Noguchi

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We studied the fabrication of poly-Si TFT (thin film transistor) by using excimer laser crystallization of sputtered a-Si film at below 200°C. We could obtain the precursor a-Si film with low impurity gas content of 0.39 % by using Xe sputtering and poly-Si film with maximum grain size of 1 μm. We successfully fabricated poly-Si TFT with a field-effect mobility of 70 cm 2/V·Sec on glass and 15 cm 2/V·sec on plastic by using ultra low temperature process at below 200°C, respectively.

Original languageEnglish
Pages (from-to)S61-S63
JournalJournal of the Korean Physical Society
Volume48
Issue numberSUPPL. 1
Publication statusPublished - 2006 Jan 1

Fingerprint

cryogenic temperature
transistors
plastics
thin films
excimer lasers
grain size
sputtering
crystallization
impurities
fabrication
glass
gases

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Kim, D. Y., Kwon, J. Y., Jung, J. S., Park, K. B., Cho, H. S., Lim, H., ... Noguchi, T. (2006). Ultra-low temperature poly-Si thin film transistor for plastic substrate. Journal of the Korean Physical Society, 48(SUPPL. 1), S61-S63.
Kim, Do Young ; Kwon, Jang Yeon ; Jung, Ji Sim ; Park, Kyung Bae ; Cho, Hans S. ; Lim, Huck ; Kim, Jong Man ; Yin, Huaxing ; Zhang, Xiaoxin ; Noguchi, Takashi ; Noguchi, Takashi. / Ultra-low temperature poly-Si thin film transistor for plastic substrate. In: Journal of the Korean Physical Society. 2006 ; Vol. 48, No. SUPPL. 1. pp. S61-S63.
@article{e552e6a713574207a6f261623b6ec474,
title = "Ultra-low temperature poly-Si thin film transistor for plastic substrate",
abstract = "We studied the fabrication of poly-Si TFT (thin film transistor) by using excimer laser crystallization of sputtered a-Si film at below 200°C. We could obtain the precursor a-Si film with low impurity gas content of 0.39 {\%} by using Xe sputtering and poly-Si film with maximum grain size of 1 μm. We successfully fabricated poly-Si TFT with a field-effect mobility of 70 cm 2/V·Sec on glass and 15 cm 2/V·sec on plastic by using ultra low temperature process at below 200°C, respectively.",
author = "Kim, {Do Young} and Kwon, {Jang Yeon} and Jung, {Ji Sim} and Park, {Kyung Bae} and Cho, {Hans S.} and Huck Lim and Kim, {Jong Man} and Huaxing Yin and Xiaoxin Zhang and Takashi Noguchi and Takashi Noguchi",
year = "2006",
month = "1",
day = "1",
language = "English",
volume = "48",
pages = "S61--S63",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
publisher = "Korean Physical Society",
number = "SUPPL. 1",

}

Kim, DY, Kwon, JY, Jung, JS, Park, KB, Cho, HS, Lim, H, Kim, JM, Yin, H, Zhang, X, Noguchi, T & Noguchi, T 2006, 'Ultra-low temperature poly-Si thin film transistor for plastic substrate', Journal of the Korean Physical Society, vol. 48, no. SUPPL. 1, pp. S61-S63.

Ultra-low temperature poly-Si thin film transistor for plastic substrate. / Kim, Do Young; Kwon, Jang Yeon; Jung, Ji Sim; Park, Kyung Bae; Cho, Hans S.; Lim, Huck; Kim, Jong Man; Yin, Huaxing; Zhang, Xiaoxin; Noguchi, Takashi; Noguchi, Takashi.

In: Journal of the Korean Physical Society, Vol. 48, No. SUPPL. 1, 01.01.2006, p. S61-S63.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Ultra-low temperature poly-Si thin film transistor for plastic substrate

AU - Kim, Do Young

AU - Kwon, Jang Yeon

AU - Jung, Ji Sim

AU - Park, Kyung Bae

AU - Cho, Hans S.

AU - Lim, Huck

AU - Kim, Jong Man

AU - Yin, Huaxing

AU - Zhang, Xiaoxin

AU - Noguchi, Takashi

AU - Noguchi, Takashi

PY - 2006/1/1

Y1 - 2006/1/1

N2 - We studied the fabrication of poly-Si TFT (thin film transistor) by using excimer laser crystallization of sputtered a-Si film at below 200°C. We could obtain the precursor a-Si film with low impurity gas content of 0.39 % by using Xe sputtering and poly-Si film with maximum grain size of 1 μm. We successfully fabricated poly-Si TFT with a field-effect mobility of 70 cm 2/V·Sec on glass and 15 cm 2/V·sec on plastic by using ultra low temperature process at below 200°C, respectively.

AB - We studied the fabrication of poly-Si TFT (thin film transistor) by using excimer laser crystallization of sputtered a-Si film at below 200°C. We could obtain the precursor a-Si film with low impurity gas content of 0.39 % by using Xe sputtering and poly-Si film with maximum grain size of 1 μm. We successfully fabricated poly-Si TFT with a field-effect mobility of 70 cm 2/V·Sec on glass and 15 cm 2/V·sec on plastic by using ultra low temperature process at below 200°C, respectively.

UR - http://www.scopus.com/inward/record.url?scp=33644538239&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33644538239&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:33644538239

VL - 48

SP - S61-S63

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - SUPPL. 1

ER -

Kim DY, Kwon JY, Jung JS, Park KB, Cho HS, Lim H et al. Ultra-low temperature poly-Si thin film transistor for plastic substrate. Journal of the Korean Physical Society. 2006 Jan 1;48(SUPPL. 1):S61-S63.