An ion doping process was performed by using a basic ion shower system. After ion doping and subsequent activation of the dopants in the Si film by excimer laser annealing (ELA), we studied the crystallinity of the Si surface using UV-reflectance spectroscopy and the sheet resistance by using 4-point probe measurements. To prevent excessive temperature increase on the plastic substrate during ion shower doping, the plasma shower was applied in a series of short pulses. As a result, dopant ions were efficiently incorporated and were activated into the a-Si film on plastic substrate after ELA. The sheet resistance decreased with increase of actual doping time, which corresponds to the incorporated dose. Also, we confirmed a distinct relationship between the crystallinity and the sheet resistance. This work shows that pulsed ion shower doping is a promising technique for ultra-low-temperature poly-Si TFTs on plastic substrates.
|Journal||Journal of the Korean Physical Society|
|Issue number||SUPPL. 1|
|Publication status||Published - 2006 Jan 1|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)