Ultra-low temperature process by ion shower doping technique for poly-Si TFTs on Plastics

Jong Man Kim, Huck Lim, Do Young Kim, Ji Sim Jung, Jang Yeon Kwon, Takashi Noguchi, Wan Shick Hong, Takashi Noguchi

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

An ion doping process was performed by using a basic ion shower system. After ion doping and subsequent activation of the dopants in the Si film by excimer laser annealing (ELA), we studied the crystallinity of the Si surface using UV-reflectance spectroscopy and the sheet resistance by using 4-point probe measurements. To prevent excessive temperature increase on the plastic substrate during ion shower doping, the plasma shower was applied in a series of short pulses. As a result, dopant ions were efficiently incorporated and were activated into the a-Si film on plastic substrate after ELA. The sheet resistance decreased with increase of actual doping time, which corresponds to the incorporated dose. Also, we confirmed a distinct relationship between the crystallinity and the sheet resistance. This work shows that pulsed ion shower doping is a promising technique for ultra-low-temperature poly-Si TFTs on plastic substrates.

Original languageEnglish
Pages (from-to)S51-S54
JournalJournal of the Korean Physical Society
Volume48
Issue numberSUPPL. 1
Publication statusPublished - 2006 Jan 1

Fingerprint

cryogenic temperature
showers
plastics
ions
laser annealing
excimer lasers
crystallinity
activation
reflectance
dosage
probes
pulses
spectroscopy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Kim, J. M., Lim, H., Kim, D. Y., Jung, J. S., Kwon, J. Y., Noguchi, T., ... Noguchi, T. (2006). Ultra-low temperature process by ion shower doping technique for poly-Si TFTs on Plastics. Journal of the Korean Physical Society, 48(SUPPL. 1), S51-S54.
Kim, Jong Man ; Lim, Huck ; Kim, Do Young ; Jung, Ji Sim ; Kwon, Jang Yeon ; Noguchi, Takashi ; Hong, Wan Shick ; Noguchi, Takashi. / Ultra-low temperature process by ion shower doping technique for poly-Si TFTs on Plastics. In: Journal of the Korean Physical Society. 2006 ; Vol. 48, No. SUPPL. 1. pp. S51-S54.
@article{5f8de1e8454a4f1faadc6d8e31f92a0a,
title = "Ultra-low temperature process by ion shower doping technique for poly-Si TFTs on Plastics",
abstract = "An ion doping process was performed by using a basic ion shower system. After ion doping and subsequent activation of the dopants in the Si film by excimer laser annealing (ELA), we studied the crystallinity of the Si surface using UV-reflectance spectroscopy and the sheet resistance by using 4-point probe measurements. To prevent excessive temperature increase on the plastic substrate during ion shower doping, the plasma shower was applied in a series of short pulses. As a result, dopant ions were efficiently incorporated and were activated into the a-Si film on plastic substrate after ELA. The sheet resistance decreased with increase of actual doping time, which corresponds to the incorporated dose. Also, we confirmed a distinct relationship between the crystallinity and the sheet resistance. This work shows that pulsed ion shower doping is a promising technique for ultra-low-temperature poly-Si TFTs on plastic substrates.",
author = "Kim, {Jong Man} and Huck Lim and Kim, {Do Young} and Jung, {Ji Sim} and Kwon, {Jang Yeon} and Takashi Noguchi and Hong, {Wan Shick} and Takashi Noguchi",
year = "2006",
month = "1",
day = "1",
language = "English",
volume = "48",
pages = "S51--S54",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
publisher = "Korean Physical Society",
number = "SUPPL. 1",

}

Kim, JM, Lim, H, Kim, DY, Jung, JS, Kwon, JY, Noguchi, T, Hong, WS & Noguchi, T 2006, 'Ultra-low temperature process by ion shower doping technique for poly-Si TFTs on Plastics', Journal of the Korean Physical Society, vol. 48, no. SUPPL. 1, pp. S51-S54.

Ultra-low temperature process by ion shower doping technique for poly-Si TFTs on Plastics. / Kim, Jong Man; Lim, Huck; Kim, Do Young; Jung, Ji Sim; Kwon, Jang Yeon; Noguchi, Takashi; Hong, Wan Shick; Noguchi, Takashi.

In: Journal of the Korean Physical Society, Vol. 48, No. SUPPL. 1, 01.01.2006, p. S51-S54.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Ultra-low temperature process by ion shower doping technique for poly-Si TFTs on Plastics

AU - Kim, Jong Man

AU - Lim, Huck

AU - Kim, Do Young

AU - Jung, Ji Sim

AU - Kwon, Jang Yeon

AU - Noguchi, Takashi

AU - Hong, Wan Shick

AU - Noguchi, Takashi

PY - 2006/1/1

Y1 - 2006/1/1

N2 - An ion doping process was performed by using a basic ion shower system. After ion doping and subsequent activation of the dopants in the Si film by excimer laser annealing (ELA), we studied the crystallinity of the Si surface using UV-reflectance spectroscopy and the sheet resistance by using 4-point probe measurements. To prevent excessive temperature increase on the plastic substrate during ion shower doping, the plasma shower was applied in a series of short pulses. As a result, dopant ions were efficiently incorporated and were activated into the a-Si film on plastic substrate after ELA. The sheet resistance decreased with increase of actual doping time, which corresponds to the incorporated dose. Also, we confirmed a distinct relationship between the crystallinity and the sheet resistance. This work shows that pulsed ion shower doping is a promising technique for ultra-low-temperature poly-Si TFTs on plastic substrates.

AB - An ion doping process was performed by using a basic ion shower system. After ion doping and subsequent activation of the dopants in the Si film by excimer laser annealing (ELA), we studied the crystallinity of the Si surface using UV-reflectance spectroscopy and the sheet resistance by using 4-point probe measurements. To prevent excessive temperature increase on the plastic substrate during ion shower doping, the plasma shower was applied in a series of short pulses. As a result, dopant ions were efficiently incorporated and were activated into the a-Si film on plastic substrate after ELA. The sheet resistance decreased with increase of actual doping time, which corresponds to the incorporated dose. Also, we confirmed a distinct relationship between the crystallinity and the sheet resistance. This work shows that pulsed ion shower doping is a promising technique for ultra-low-temperature poly-Si TFTs on plastic substrates.

UR - http://www.scopus.com/inward/record.url?scp=33644507084&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33644507084&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:33644507084

VL - 48

SP - S51-S54

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - SUPPL. 1

ER -