Sub-100 nm P+/N junctions are fabricated by implanting wafers in the plasma immersion ion implantation system (PIII). Ions from SiF4 and BF3 plasmas are implanted at energies from 4-6 keV and 2 keV, respectively. The amorphous region formed by SiF4 implantation is shown to be effective in slowing B diffusion during at 10 sec, 1060°C rapid thermal anneal step. Channeling and transmission electron microscopy studies show the recrystallized amorphous region is comparable in quality to an unprocessed Si wafer, and the implantation and annealing sequence has no detrimental effects on the physical or electrical characteristics of fabricated devices. Diodes have forward ideality factors of 1.05 to 1.06 and reverse leakage as low as 2 nA/cm2 in the diode bulk at -5 V applied bias.