Ultra-shallow P+/N junctions formed by SiF4 preamorphization and BF3 implantation using plasma immersion ion implantation

Erin C. Jones, Seongil Im, Nathan W. Cheung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)


Sub-100 nm P+/N junctions are fabricated by implanting wafers in the plasma immersion ion implantation system (PIII). Ions from SiF4 and BF3 plasmas are implanted at energies from 4-6 keV and 2 keV, respectively. The amorphous region formed by SiF4 implantation is shown to be effective in slowing B diffusion during at 10 sec, 1060°C rapid thermal anneal step. Channeling and transmission electron microscopy studies show the recrystallized amorphous region is comparable in quality to an unprocessed Si wafer, and the implantation and annealing sequence has no detrimental effects on the physical or electrical characteristics of fabricated devices. Diodes have forward ideality factors of 1.05 to 1.06 and reverse leakage as low as 2 nA/cm2 in the diode bulk at -5 V applied bias.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
PublisherPubl by Materials Research Society
Number of pages5
ISBN (Print)1558991743
Publication statusPublished - 1993
EventBeam Solid Interactions: Fundamentals and Applications - Boston, MA, USA
Duration: 1992 Nov 301992 Dec 4

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


OtherBeam Solid Interactions: Fundamentals and Applications
CityBoston, MA, USA

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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