Ultra-shallow P+/N junctions formed by SiF4 preamorphization and BF3 implantation using plasma immersion ion implantation

Erin C. Jones, Seongil Im, Nathan W. Cheung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Sub-100 nm P+/N junctions are fabricated by implanting wafers in the plasma immersion ion implantation system (PIII). Ions from SiF4 and BF3 plasmas are implanted at energies from 4-6 keV and 2 keV, respectively. The amorphous region formed by SiF4 implantation is shown to be effective in slowing B diffusion during at 10 sec, 1060°C rapid thermal anneal step. Channeling and transmission electron microscopy studies show the recrystallized amorphous region is comparable in quality to an unprocessed Si wafer, and the implantation and annealing sequence has no detrimental effects on the physical or electrical characteristics of fabricated devices. Diodes have forward ideality factors of 1.05 to 1.06 and reverse leakage as low as 2 nA/cm2 in the diode bulk at -5 V applied bias.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
PublisherPubl by Materials Research Society
Pages255-259
Number of pages5
ISBN (Print)1558991743
Publication statusPublished - 1993 Jan 1
EventBeam Solid Interactions: Fundamentals and Applications - Boston, MA, USA
Duration: 1992 Nov 301992 Dec 4

Publication series

NameMaterials Research Society Symposium Proceedings
Volume279
ISSN (Print)0272-9172

Other

OtherBeam Solid Interactions: Fundamentals and Applications
CityBoston, MA, USA
Period92/11/3092/12/4

Fingerprint

Ion implantation
Diodes
Plasmas
Annealing
Ions
Transmission electron microscopy
silicon tetrafluoride
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Jones, E. C., Im, S., & Cheung, N. W. (1993). Ultra-shallow P+/N junctions formed by SiF4 preamorphization and BF3 implantation using plasma immersion ion implantation. In Materials Research Society Symposium Proceedings (pp. 255-259). (Materials Research Society Symposium Proceedings; Vol. 279). Publ by Materials Research Society.
Jones, Erin C. ; Im, Seongil ; Cheung, Nathan W. / Ultra-shallow P+/N junctions formed by SiF4 preamorphization and BF3 implantation using plasma immersion ion implantation. Materials Research Society Symposium Proceedings. Publ by Materials Research Society, 1993. pp. 255-259 (Materials Research Society Symposium Proceedings).
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Jones, EC, Im, S & Cheung, NW 1993, Ultra-shallow P+/N junctions formed by SiF4 preamorphization and BF3 implantation using plasma immersion ion implantation. in Materials Research Society Symposium Proceedings. Materials Research Society Symposium Proceedings, vol. 279, Publ by Materials Research Society, pp. 255-259, Beam Solid Interactions: Fundamentals and Applications, Boston, MA, USA, 92/11/30.

Ultra-shallow P+/N junctions formed by SiF4 preamorphization and BF3 implantation using plasma immersion ion implantation. / Jones, Erin C.; Im, Seongil; Cheung, Nathan W.

Materials Research Society Symposium Proceedings. Publ by Materials Research Society, 1993. p. 255-259 (Materials Research Society Symposium Proceedings; Vol. 279).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - Sub-100 nm P+/N junctions are fabricated by implanting wafers in the plasma immersion ion implantation system (PIII). Ions from SiF4 and BF3 plasmas are implanted at energies from 4-6 keV and 2 keV, respectively. The amorphous region formed by SiF4 implantation is shown to be effective in slowing B diffusion during at 10 sec, 1060°C rapid thermal anneal step. Channeling and transmission electron microscopy studies show the recrystallized amorphous region is comparable in quality to an unprocessed Si wafer, and the implantation and annealing sequence has no detrimental effects on the physical or electrical characteristics of fabricated devices. Diodes have forward ideality factors of 1.05 to 1.06 and reverse leakage as low as 2 nA/cm2 in the diode bulk at -5 V applied bias.

AB - Sub-100 nm P+/N junctions are fabricated by implanting wafers in the plasma immersion ion implantation system (PIII). Ions from SiF4 and BF3 plasmas are implanted at energies from 4-6 keV and 2 keV, respectively. The amorphous region formed by SiF4 implantation is shown to be effective in slowing B diffusion during at 10 sec, 1060°C rapid thermal anneal step. Channeling and transmission electron microscopy studies show the recrystallized amorphous region is comparable in quality to an unprocessed Si wafer, and the implantation and annealing sequence has no detrimental effects on the physical or electrical characteristics of fabricated devices. Diodes have forward ideality factors of 1.05 to 1.06 and reverse leakage as low as 2 nA/cm2 in the diode bulk at -5 V applied bias.

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M3 - Conference contribution

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Jones EC, Im S, Cheung NW. Ultra-shallow P+/N junctions formed by SiF4 preamorphization and BF3 implantation using plasma immersion ion implantation. In Materials Research Society Symposium Proceedings. Publ by Materials Research Society. 1993. p. 255-259. (Materials Research Society Symposium Proceedings).