Ultra-thin gate dielectric reliability projections

M. Moosa, A. Haggag, N. Liu, S. Kalpat, M. Kuffler, D. Menke, P. Abramowitz, M. E. Ramón, H. H. Tseng, T. Y. Luo, S. Lim, P. Grudowski, J. Jiang, B. W. Min, C. Weintraub, J. Chen, S. Wong, C. Paquette, G. Anderson, P. J. TobinB. E. White, M. Mendicino

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Phenomenological time-dependent dielectric breakdown (TDDB) and bias-temperature instability (BTI) models are demonstrated to enable reasonably accurate reliability projections for several generations of silicon oxynitride-based transistors and circuits with EOT down to ∼1.3nm. Furthermore, while reliability and performance can be traded-off by engineering the gate dielectric coupled with device integration, benchmarking of published data suggests that the reliability achievable at each transistor node falls within an intrinsically plausible range for similar dielectric films. A preliminary investigation of high-k dielectric device reliability suggests that a similar methodology can be adopted to project the reliability of scaled high-k films.

Original languageEnglish
Title of host publication2005 International Conference on Integrated Circuit Design and Technology, ICICDT
Pages129-133
Number of pages5
Publication statusPublished - 2005 Oct 10
Event2005 International Conference on Integrated Circuit Design and Technology, ICICDT - Austin, TX, United States
Duration: 2005 May 92005 May 11

Publication series

Name2005 International Conference on Integrated Circuit Design and Technology, ICICDT

Other

Other2005 International Conference on Integrated Circuit Design and Technology, ICICDT
CountryUnited States
CityAustin, TX
Period05/5/905/5/11

Fingerprint

Gate dielectrics
Transistors
Dielectric devices
Dielectric films
Benchmarking
Electric breakdown
Silicon
Networks (circuits)
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Moosa, M., Haggag, A., Liu, N., Kalpat, S., Kuffler, M., Menke, D., ... Mendicino, M. (2005). Ultra-thin gate dielectric reliability projections. In 2005 International Conference on Integrated Circuit Design and Technology, ICICDT (pp. 129-133). [F3] (2005 International Conference on Integrated Circuit Design and Technology, ICICDT).
Moosa, M. ; Haggag, A. ; Liu, N. ; Kalpat, S. ; Kuffler, M. ; Menke, D. ; Abramowitz, P. ; Ramón, M. E. ; Tseng, H. H. ; Luo, T. Y. ; Lim, S. ; Grudowski, P. ; Jiang, J. ; Min, B. W. ; Weintraub, C. ; Chen, J. ; Wong, S. ; Paquette, C. ; Anderson, G. ; Tobin, P. J. ; White, B. E. ; Mendicino, M. / Ultra-thin gate dielectric reliability projections. 2005 International Conference on Integrated Circuit Design and Technology, ICICDT. 2005. pp. 129-133 (2005 International Conference on Integrated Circuit Design and Technology, ICICDT).
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abstract = "Phenomenological time-dependent dielectric breakdown (TDDB) and bias-temperature instability (BTI) models are demonstrated to enable reasonably accurate reliability projections for several generations of silicon oxynitride-based transistors and circuits with EOT down to ∼1.3nm. Furthermore, while reliability and performance can be traded-off by engineering the gate dielectric coupled with device integration, benchmarking of published data suggests that the reliability achievable at each transistor node falls within an intrinsically plausible range for similar dielectric films. A preliminary investigation of high-k dielectric device reliability suggests that a similar methodology can be adopted to project the reliability of scaled high-k films.",
author = "M. Moosa and A. Haggag and N. Liu and S. Kalpat and M. Kuffler and D. Menke and P. Abramowitz and Ram{\'o}n, {M. E.} and Tseng, {H. H.} and Luo, {T. Y.} and S. Lim and P. Grudowski and J. Jiang and Min, {B. W.} and C. Weintraub and J. Chen and S. Wong and C. Paquette and G. Anderson and Tobin, {P. J.} and White, {B. E.} and M. Mendicino",
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Moosa, M, Haggag, A, Liu, N, Kalpat, S, Kuffler, M, Menke, D, Abramowitz, P, Ramón, ME, Tseng, HH, Luo, TY, Lim, S, Grudowski, P, Jiang, J, Min, BW, Weintraub, C, Chen, J, Wong, S, Paquette, C, Anderson, G, Tobin, PJ, White, BE & Mendicino, M 2005, Ultra-thin gate dielectric reliability projections. in 2005 International Conference on Integrated Circuit Design and Technology, ICICDT., F3, 2005 International Conference on Integrated Circuit Design and Technology, ICICDT, pp. 129-133, 2005 International Conference on Integrated Circuit Design and Technology, ICICDT, Austin, TX, United States, 05/5/9.

Ultra-thin gate dielectric reliability projections. / Moosa, M.; Haggag, A.; Liu, N.; Kalpat, S.; Kuffler, M.; Menke, D.; Abramowitz, P.; Ramón, M. E.; Tseng, H. H.; Luo, T. Y.; Lim, S.; Grudowski, P.; Jiang, J.; Min, B. W.; Weintraub, C.; Chen, J.; Wong, S.; Paquette, C.; Anderson, G.; Tobin, P. J.; White, B. E.; Mendicino, M.

2005 International Conference on Integrated Circuit Design and Technology, ICICDT. 2005. p. 129-133 F3 (2005 International Conference on Integrated Circuit Design and Technology, ICICDT).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Ultra-thin gate dielectric reliability projections

AU - Moosa, M.

AU - Haggag, A.

AU - Liu, N.

AU - Kalpat, S.

AU - Kuffler, M.

AU - Menke, D.

AU - Abramowitz, P.

AU - Ramón, M. E.

AU - Tseng, H. H.

AU - Luo, T. Y.

AU - Lim, S.

AU - Grudowski, P.

AU - Jiang, J.

AU - Min, B. W.

AU - Weintraub, C.

AU - Chen, J.

AU - Wong, S.

AU - Paquette, C.

AU - Anderson, G.

AU - Tobin, P. J.

AU - White, B. E.

AU - Mendicino, M.

PY - 2005/10/10

Y1 - 2005/10/10

N2 - Phenomenological time-dependent dielectric breakdown (TDDB) and bias-temperature instability (BTI) models are demonstrated to enable reasonably accurate reliability projections for several generations of silicon oxynitride-based transistors and circuits with EOT down to ∼1.3nm. Furthermore, while reliability and performance can be traded-off by engineering the gate dielectric coupled with device integration, benchmarking of published data suggests that the reliability achievable at each transistor node falls within an intrinsically plausible range for similar dielectric films. A preliminary investigation of high-k dielectric device reliability suggests that a similar methodology can be adopted to project the reliability of scaled high-k films.

AB - Phenomenological time-dependent dielectric breakdown (TDDB) and bias-temperature instability (BTI) models are demonstrated to enable reasonably accurate reliability projections for several generations of silicon oxynitride-based transistors and circuits with EOT down to ∼1.3nm. Furthermore, while reliability and performance can be traded-off by engineering the gate dielectric coupled with device integration, benchmarking of published data suggests that the reliability achievable at each transistor node falls within an intrinsically plausible range for similar dielectric films. A preliminary investigation of high-k dielectric device reliability suggests that a similar methodology can be adopted to project the reliability of scaled high-k films.

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M3 - Conference contribution

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T3 - 2005 International Conference on Integrated Circuit Design and Technology, ICICDT

SP - 129

EP - 133

BT - 2005 International Conference on Integrated Circuit Design and Technology, ICICDT

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Moosa M, Haggag A, Liu N, Kalpat S, Kuffler M, Menke D et al. Ultra-thin gate dielectric reliability projections. In 2005 International Conference on Integrated Circuit Design and Technology, ICICDT. 2005. p. 129-133. F3. (2005 International Conference on Integrated Circuit Design and Technology, ICICDT).