Ultra-thin gate dielectric reliability projections

M. Moosa, A. Haggag, N. Liu, S. Kalpat, M. Kuffler, D. Menke, P. Abramowitz, M. E. Ramón, H. H. Tseng, T. Y. Luo, S. Lim, P. Grudowski, J. Jiang, B. W. Min, C. Weintraub, J. Chen, S. Wong, C. Paquette, G. Anderson, P. J. TobinB. E. White, M. Mendicino

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Phenomenological time-dependent dielectric breakdown (TDDB) and bias-temperature instability (BTI) models are demonstrated to enable reasonably accurate reliability projections for several generations of silicon oxynitride-based transistors and circuits with EOT down to ∼1.3nm. Furthermore, while reliability and performance can be traded-off by engineering the gate dielectric coupled with device integration, benchmarking of published data suggests that the reliability achievable at each transistor node falls within an intrinsically plausible range for similar dielectric films. A preliminary investigation of high-k dielectric device reliability suggests that a similar methodology can be adopted to project the reliability of scaled high-k films.

Original languageEnglish
Title of host publication2005 International Conference on Integrated Circuit Design and Technology, ICICDT
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages129-133
Number of pages5
ISBN (Print)0780390814, 9780780390812
DOIs
Publication statusPublished - 2005 Jan 1
Event2005 International Conference on Integrated Circuit Design and Technology, ICICDT - Austin, TX, United States
Duration: 2005 May 92005 May 11

Publication series

Name2005 International Conference on Integrated Circuit Design and Technology, ICICDT

Other

Other2005 International Conference on Integrated Circuit Design and Technology, ICICDT
CountryUnited States
CityAustin, TX
Period05/5/905/5/11

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Moosa, M., Haggag, A., Liu, N., Kalpat, S., Kuffler, M., Menke, D., Abramowitz, P., Ramón, M. E., Tseng, H. H., Luo, T. Y., Lim, S., Grudowski, P., Jiang, J., Min, B. W., Weintraub, C., Chen, J., Wong, S., Paquette, C., Anderson, G., ... Mendicino, M. (2005). Ultra-thin gate dielectric reliability projections. In 2005 International Conference on Integrated Circuit Design and Technology, ICICDT (pp. 129-133). [F3] (2005 International Conference on Integrated Circuit Design and Technology, ICICDT). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/icicdt.2005.1502609