Ultrafast Carrier-Lattice Interactions and Interlayer Modulations of Bi2Se3by X-ray Free-Electron Laser Diffraction

Sungwon Kim; Youngsam Kim; Jaeseung Kim; Sungwook Choi; Kyuseok Yun; Dongjin Kim; Soo Yeon Lim; Sunam Kim; Sae Hwan Chun; Jaeku Park; Intae Eom; Kyung Sook Kim; Tae Yeong Koo; Yunbo Ou; Ferhat Katmis; Haidan Wen; Anthony Dichiara; Donald A. Walko; Eric C. Landahl; Hyeonsik Cheong; Eunji Sim; Jagadeesh Moodera; Hyunjung Kim

doi:10.1021/acs.nanolett.1c01424

Ultrafast Carrier-Lattice Interactions and Interlayer Modulations of Bi₂Se₃by X-ray Free-Electron Laser Diffraction

Sungwon Kim, Youngsam Kim, Jaeseung Kim, Sungwook Choi, Kyuseok Yun, Dongjin Kim, Soo Yeon Lim, Sunam Kim, Sae Hwan Chun, Jaeku Park, Intae Eom, Kyung Sook Kim, Tae Yeong Koo, Yunbo Ou, Ferhat Katmis, Haidan Wen, Anthony Dichiara, Donald A. Walko, Eric C. Landahl, Hyeonsik CheongEunji Sim, Jagadeesh Moodera, Hyunjung Kim

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

As a 3D topological insulator, bismuth selenide (Bi2Se3) has potential applications for electrically and optically controllable magnetic and optoelectronic devices. Understanding the coupling with its topological phase requires studying the interactions of carriers with the lattice on time scales down to the subpicosecond regime. Here, we investigate the ultrafast carrier-induced lattice contractions and interlayer modulations in Bi2Se3 thin films by time-resolved diffraction using an X-ray free-electron laser. The lattice contraction depends on the carrier concentration and is followed by an interlayer expansion accompanied by oscillations. Using density functional theory and the Lifshitz model, the initial contraction can be explained by van der Waals force modulation of the confined free carrier layers. Our theoretical calculations suggest that the band inversion, related to a topological phase transition, is modulated by the expansion of the interlayer distance. These results provide insights into the topological phase control by light-induced structural change on ultrafast time scales.

Original language	English
Pages (from-to)	8554-8562
Number of pages	9
Journal	Nano letters
Volume	21
Issue number	20
DOIs	https://doi.org/10.1021/acs.nanolett.1c01424
Publication status	Published - 2021 Oct 27

Bibliographical note

Funding Information:
We thank Sanghoon Song and Aymeric Robert for fruitful discussions. This research was supported by the National Research Foundation of Korea (NRF-2015R1A5A1009962, 2019R1A6B2A02100883, and 2021R1A3B1077076). Y.K. and E.S. acknowledge the support from NRF-2020R1A2C2007468. H.W. acknowledges the support of U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division. This research used resources of the Advanced Photon Source, a U.S. DOE Office of Science User Facility, operated for the DOE Office of Science by Argonne National Laboratory under Contract No. DE-AC02-06CH11357. The experiments were carried out at the XSS beamline of PAL-XFEL (experiment no. 2017-1st-FXS-006 and 2018-1st-XSS-010) funded by the Ministry of Science and ICT of Korea. The work at MIT was supported by the Center for Integrated Quantum Materials (NSF-DMR 1231319), the NSF Grant No. DMR 1700137, NSF CONVERGENCE ACCELERATOR TRACK C: SYN OIA-2040620, and ONR Grant Nos. N00014-16-1-2657 and N00014-20-1-2306.

Publisher Copyright:
© 2021 American Chemical Society.

All Science Journal Classification (ASJC) codes

Bioengineering
Chemistry(all)
Materials Science(all)
Condensed Matter Physics
Mechanical Engineering

Access to Document

10.1021/acs.nanolett.1c01424

Cite this

Kim, S., Kim, Y., Kim, J., Choi, S., Yun, K., Kim, D., Lim, S. Y., Kim, S., Chun, S. H., Park, J., Eom, I., Kim, K. S., Koo, T. Y., Ou, Y., Katmis, F., Wen, H., Dichiara, A., Walko, D. A., Landahl, E. C., ... Kim, H. (2021). Ultrafast Carrier-Lattice Interactions and Interlayer Modulations of Bi₂Se₃by X-ray Free-Electron Laser Diffraction. Nano letters, 21(20), 8554-8562. https://doi.org/10.1021/acs.nanolett.1c01424

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title = "Ultrafast Carrier-Lattice Interactions and Interlayer Modulations of Bi2Se3by X-ray Free-Electron Laser Diffraction",

abstract = "As a 3D topological insulator, bismuth selenide (Bi2Se3) has potential applications for electrically and optically controllable magnetic and optoelectronic devices. Understanding the coupling with its topological phase requires studying the interactions of carriers with the lattice on time scales down to the subpicosecond regime. Here, we investigate the ultrafast carrier-induced lattice contractions and interlayer modulations in Bi2Se3 thin films by time-resolved diffraction using an X-ray free-electron laser. The lattice contraction depends on the carrier concentration and is followed by an interlayer expansion accompanied by oscillations. Using density functional theory and the Lifshitz model, the initial contraction can be explained by van der Waals force modulation of the confined free carrier layers. Our theoretical calculations suggest that the band inversion, related to a topological phase transition, is modulated by the expansion of the interlayer distance. These results provide insights into the topological phase control by light-induced structural change on ultrafast time scales.",

author = "Sungwon Kim and Youngsam Kim and Jaeseung Kim and Sungwook Choi and Kyuseok Yun and Dongjin Kim and Lim, {Soo Yeon} and Sunam Kim and Chun, {Sae Hwan} and Jaeku Park and Intae Eom and Kim, {Kyung Sook} and Koo, {Tae Yeong} and Yunbo Ou and Ferhat Katmis and Haidan Wen and Anthony Dichiara and Walko, {Donald A.} and Landahl, {Eric C.} and Hyeonsik Cheong and Eunji Sim and Jagadeesh Moodera and Hyunjung Kim",

note = "Funding Information: We thank Sanghoon Song and Aymeric Robert for fruitful discussions. This research was supported by the National Research Foundation of Korea (NRF-2015R1A5A1009962, 2019R1A6B2A02100883, and 2021R1A3B1077076). Y.K. and E.S. acknowledge the support from NRF-2020R1A2C2007468. H.W. acknowledges the support of U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division. This research used resources of the Advanced Photon Source, a U.S. DOE Office of Science User Facility, operated for the DOE Office of Science by Argonne National Laboratory under Contract No. DE-AC02-06CH11357. The experiments were carried out at the XSS beamline of PAL-XFEL (experiment no. 2017-1st-FXS-006 and 2018-1st-XSS-010) funded by the Ministry of Science and ICT of Korea. The work at MIT was supported by the Center for Integrated Quantum Materials (NSF-DMR 1231319), the NSF Grant No. DMR 1700137, NSF CONVERGENCE ACCELERATOR TRACK C: SYN OIA-2040620, and ONR Grant Nos. N00014-16-1-2657 and N00014-20-1-2306. Publisher Copyright: {\textcopyright} 2021 American Chemical Society.",

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doi = "10.1021/acs.nanolett.1c01424",

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Kim, S, Kim, Y, Kim, J, Choi, S, Yun, K, Kim, D, Lim, SY, Kim, S, Chun, SH, Park, J, Eom, I, Kim, KS, Koo, TY, Ou, Y, Katmis, F, Wen, H, Dichiara, A, Walko, DA, Landahl, EC, Cheong, H, Sim, E, Moodera, J & Kim, H 2021, 'Ultrafast Carrier-Lattice Interactions and Interlayer Modulations of Bi₂Se₃by X-ray Free-Electron Laser Diffraction', Nano letters, vol. 21, no. 20, pp. 8554-8562. https://doi.org/10.1021/acs.nanolett.1c01424

TY - JOUR

T1 - Ultrafast Carrier-Lattice Interactions and Interlayer Modulations of Bi2Se3by X-ray Free-Electron Laser Diffraction

AU - Kim, Sungwon

AU - Kim, Youngsam

AU - Kim, Jaeseung

AU - Choi, Sungwook

AU - Yun, Kyuseok

AU - Kim, Dongjin

AU - Lim, Soo Yeon

AU - Kim, Sunam

AU - Chun, Sae Hwan

AU - Park, Jaeku

AU - Eom, Intae

AU - Kim, Kyung Sook

AU - Koo, Tae Yeong

AU - Ou, Yunbo

AU - Katmis, Ferhat

AU - Wen, Haidan

AU - Dichiara, Anthony

AU - Walko, Donald A.

AU - Landahl, Eric C.

AU - Cheong, Hyeonsik

AU - Sim, Eunji

AU - Moodera, Jagadeesh

AU - Kim, Hyunjung

N1 - Funding Information: We thank Sanghoon Song and Aymeric Robert for fruitful discussions. This research was supported by the National Research Foundation of Korea (NRF-2015R1A5A1009962, 2019R1A6B2A02100883, and 2021R1A3B1077076). Y.K. and E.S. acknowledge the support from NRF-2020R1A2C2007468. H.W. acknowledges the support of U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division. This research used resources of the Advanced Photon Source, a U.S. DOE Office of Science User Facility, operated for the DOE Office of Science by Argonne National Laboratory under Contract No. DE-AC02-06CH11357. The experiments were carried out at the XSS beamline of PAL-XFEL (experiment no. 2017-1st-FXS-006 and 2018-1st-XSS-010) funded by the Ministry of Science and ICT of Korea. The work at MIT was supported by the Center for Integrated Quantum Materials (NSF-DMR 1231319), the NSF Grant No. DMR 1700137, NSF CONVERGENCE ACCELERATOR TRACK C: SYN OIA-2040620, and ONR Grant Nos. N00014-16-1-2657 and N00014-20-1-2306. Publisher Copyright: © 2021 American Chemical Society.

PY - 2021/10/27

Y1 - 2021/10/27

N2 - As a 3D topological insulator, bismuth selenide (Bi2Se3) has potential applications for electrically and optically controllable magnetic and optoelectronic devices. Understanding the coupling with its topological phase requires studying the interactions of carriers with the lattice on time scales down to the subpicosecond regime. Here, we investigate the ultrafast carrier-induced lattice contractions and interlayer modulations in Bi2Se3 thin films by time-resolved diffraction using an X-ray free-electron laser. The lattice contraction depends on the carrier concentration and is followed by an interlayer expansion accompanied by oscillations. Using density functional theory and the Lifshitz model, the initial contraction can be explained by van der Waals force modulation of the confined free carrier layers. Our theoretical calculations suggest that the band inversion, related to a topological phase transition, is modulated by the expansion of the interlayer distance. These results provide insights into the topological phase control by light-induced structural change on ultrafast time scales.

AB - As a 3D topological insulator, bismuth selenide (Bi2Se3) has potential applications for electrically and optically controllable magnetic and optoelectronic devices. Understanding the coupling with its topological phase requires studying the interactions of carriers with the lattice on time scales down to the subpicosecond regime. Here, we investigate the ultrafast carrier-induced lattice contractions and interlayer modulations in Bi2Se3 thin films by time-resolved diffraction using an X-ray free-electron laser. The lattice contraction depends on the carrier concentration and is followed by an interlayer expansion accompanied by oscillations. Using density functional theory and the Lifshitz model, the initial contraction can be explained by van der Waals force modulation of the confined free carrier layers. Our theoretical calculations suggest that the band inversion, related to a topological phase transition, is modulated by the expansion of the interlayer distance. These results provide insights into the topological phase control by light-induced structural change on ultrafast time scales.

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