Ultrafast electronic transport in low dimensional semiconductor nanostructures

Hyunyong Choi, Theodore B. Norris, Jérôme Faist, Federico Capasso

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ultrafast time-resolved pump-probe measurements are used to study low energy excitations and dynamics of electronic transport in various semiconductor nanostructures. In quantum cascade lasers, we observe ultrafast gain recovery dynamics due to electronic transport in the structures. In particular, the nature of electronic transport had been addressed by using ultrafast optical techniques. Sub-picosecond resonant tunneling injection from the quantum cascade laser injector ground state into the upper lasing state was found to be incoherent due to strong dephasing in the active subband. We also observed the strong coupling of the electronic transport to the intra-cavity photon density, which we term "photon-driven transport". Note that this invited paper reviews the details of our recent observations (H. Choi et al., Phys. Rev. Lett., 100, 167401, 2008 and H. Choi, et al., Appl. Phys. Lett. 92, 122114 (2008)).

Original languageEnglish
Title of host publicationUltrafast Phenomena in Semiconductors and Nanostructure Materials XIII
DOIs
Publication statusPublished - 2009 Jun 15
EventUltrafast Phenomena in Semiconductors and Nanostructure Materials XIII - San Jose, CA, United States
Duration: 2009 Jan 252009 Jan 29

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7214
ISSN (Print)0277-786X

Other

OtherUltrafast Phenomena in Semiconductors and Nanostructure Materials XIII
CountryUnited States
CitySan Jose, CA
Period09/1/2509/1/29

Fingerprint

Quantum cascade lasers
Nanostructures
Semiconductors
Photons
Electronics
Semiconductor materials
Resonant tunneling
Excitation energy
quantum cascade lasers
Quantum Cascade Laser
electronics
Ground state
Pumps
Photon
Recovery
photon density
resonant tunneling
injectors
Injector
lasing

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Choi, H., Norris, T. B., Faist, J., & Capasso, F. (2009). Ultrafast electronic transport in low dimensional semiconductor nanostructures. In Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII [721416] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7214). https://doi.org/10.1117/12.808529
Choi, Hyunyong ; Norris, Theodore B. ; Faist, Jérôme ; Capasso, Federico. / Ultrafast electronic transport in low dimensional semiconductor nanostructures. Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII. 2009. (Proceedings of SPIE - The International Society for Optical Engineering).
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Choi, H, Norris, TB, Faist, J & Capasso, F 2009, Ultrafast electronic transport in low dimensional semiconductor nanostructures. in Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII., 721416, Proceedings of SPIE - The International Society for Optical Engineering, vol. 7214, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII, San Jose, CA, United States, 09/1/25. https://doi.org/10.1117/12.808529

Ultrafast electronic transport in low dimensional semiconductor nanostructures. / Choi, Hyunyong; Norris, Theodore B.; Faist, Jérôme; Capasso, Federico.

Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII. 2009. 721416 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7214).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Choi H, Norris TB, Faist J, Capasso F. Ultrafast electronic transport in low dimensional semiconductor nanostructures. In Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII. 2009. 721416. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.808529