Ultrafast laser ablation of indium tin oxide thin films for organic light-emitting diode application

Mira Park; Byong Hyok Chon; Hyun Sun Kim; Sae Chae Jeoung; Dongho Kim; Jeoung Ik Lee; Hye Yong Chu; Hyeong Rae Kim

doi:10.1016/j.optlaseng.2005.03.009

Ultrafast laser ablation of indium tin oxide thin films for organic light-emitting diode application

Mira Park, Byong Hyok Chon, Hyun Sun Kim, Sae Chae Jeoung, Dongho Kim, Jeoung Ik Lee, Hye Yong Chu, Hyeong Rae Kim

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

85 Citations (Scopus)

Abstract

Ultrafast laser ablation of ITO thin film coated on the glass has been investigated as a function of laser fluence as well as the number of laser pulses. The ablation threshold of ITO thin film was found to be 0.07 J/cm ² that is much lower than that of glass substrate (about 1.2-1.6 J/cm²), which leads to a selective ablation of ITO film without damage on glass substrate. The changes in the electrical resistance and morphology of ablated trench of ITO electrode were found to be strongly dependent on the processing conditions. We present the performance of organic light-emitting diodes (OLED) fabricated with ITO electrode patterned by ultrafast laser ablation.

Original language	English
Pages (from-to)	138-146
Number of pages	9
Journal	Optics and Lasers in Engineering
Volume	44
Issue number	2
DOIs	https://doi.org/10.1016/j.optlaseng.2005.03.009
Publication status	Published - 2006 Feb

Bibliographical note

Funding Information:
This work was financially supported by Ministry of Science and Technology of Korea (S.C. Jeoung) and by Ministry of Information and Telecommunications of Korea (J.-I. Lee).

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Mechanical Engineering
Electrical and Electronic Engineering

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10.1016/j.optlaseng.2005.03.009

Cite this

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title = "Ultrafast laser ablation of indium tin oxide thin films for organic light-emitting diode application",

abstract = "Ultrafast laser ablation of ITO thin film coated on the glass has been investigated as a function of laser fluence as well as the number of laser pulses. The ablation threshold of ITO thin film was found to be 0.07 J/cm 2 that is much lower than that of glass substrate (about 1.2-1.6 J/cm2), which leads to a selective ablation of ITO film without damage on glass substrate. The changes in the electrical resistance and morphology of ablated trench of ITO electrode were found to be strongly dependent on the processing conditions. We present the performance of organic light-emitting diodes (OLED) fabricated with ITO electrode patterned by ultrafast laser ablation.",

author = "Mira Park and Chon, {Byong Hyok} and Kim, {Hyun Sun} and Jeoung, {Sae Chae} and Dongho Kim and Lee, {Jeoung Ik} and Chu, {Hye Yong} and Kim, {Hyeong Rae}",

note = "Funding Information: This work was financially supported by Ministry of Science and Technology of Korea (S.C. Jeoung) and by Ministry of Information and Telecommunications of Korea (J.-I. Lee).",

year = "2006",

month = feb,

doi = "10.1016/j.optlaseng.2005.03.009",

language = "English",

volume = "44",

pages = "138--146",

journal = "Optics and Lasers in Engineering",

issn = "0143-8166",

publisher = "Elsevier Limited",

number = "2",

}

Ultrafast laser ablation of indium tin oxide thin films for organic light-emitting diode application. / Park, Mira; Chon, Byong Hyok; Kim, Hyun Sun; Jeoung, Sae Chae; Kim, Dongho; Lee, Jeoung Ik; Chu, Hye Yong; Kim, Hyeong Rae.

In: Optics and Lasers in Engineering, Vol. 44, No. 2, 02.2006, p. 138-146.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Ultrafast laser ablation of indium tin oxide thin films for organic light-emitting diode application

AU - Park, Mira

AU - Chon, Byong Hyok

AU - Kim, Hyun Sun

AU - Jeoung, Sae Chae

AU - Kim, Dongho

AU - Lee, Jeoung Ik

AU - Chu, Hye Yong

AU - Kim, Hyeong Rae

N1 - Funding Information: This work was financially supported by Ministry of Science and Technology of Korea (S.C. Jeoung) and by Ministry of Information and Telecommunications of Korea (J.-I. Lee).

PY - 2006/2

Y1 - 2006/2

N2 - Ultrafast laser ablation of ITO thin film coated on the glass has been investigated as a function of laser fluence as well as the number of laser pulses. The ablation threshold of ITO thin film was found to be 0.07 J/cm 2 that is much lower than that of glass substrate (about 1.2-1.6 J/cm2), which leads to a selective ablation of ITO film without damage on glass substrate. The changes in the electrical resistance and morphology of ablated trench of ITO electrode were found to be strongly dependent on the processing conditions. We present the performance of organic light-emitting diodes (OLED) fabricated with ITO electrode patterned by ultrafast laser ablation.

AB - Ultrafast laser ablation of ITO thin film coated on the glass has been investigated as a function of laser fluence as well as the number of laser pulses. The ablation threshold of ITO thin film was found to be 0.07 J/cm 2 that is much lower than that of glass substrate (about 1.2-1.6 J/cm2), which leads to a selective ablation of ITO film without damage on glass substrate. The changes in the electrical resistance and morphology of ablated trench of ITO electrode were found to be strongly dependent on the processing conditions. We present the performance of organic light-emitting diodes (OLED) fabricated with ITO electrode patterned by ultrafast laser ablation.

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JO - Optics and Lasers in Engineering

JF - Optics and Lasers in Engineering

SN - 0143-8166

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Ultrafast laser ablation of indium tin oxide thin films for organic light-emitting diode application

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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