Abstract
Ultrafast laser ablation of ITO thin film coated on the glass has been investigated as a function of laser fluence as well as the number of laser pulses. The ablation threshold of ITO thin film was found to be 0.07 J/cm 2 that is much lower than that of glass substrate (about 1.2-1.6 J/cm2), which leads to a selective ablation of ITO film without damage on glass substrate. The changes in the electrical resistance and morphology of ablated trench of ITO electrode were found to be strongly dependent on the processing conditions. We present the performance of organic light-emitting diodes (OLED) fabricated with ITO electrode patterned by ultrafast laser ablation.
| Original language | English |
|---|---|
| Pages (from-to) | 138-146 |
| Number of pages | 9 |
| Journal | Optics and Lasers in Engineering |
| Volume | 44 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2006 Feb 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Mechanical Engineering
- Electrical and Electronic Engineering
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Ultrafast laser ablation of indium tin oxide thin films for organic light-emitting diode application. / Park, Mira; Chon, Byong Hyok; Kim, Hyun Sun; Jeoung, Sae Chae; Kim, Dongho; Lee, Jeoung Ik; Chu, Hye Yong; Kim, Hyeong Rae.
In: Optics and Lasers in Engineering, Vol. 44, No. 2, 01.02.2006, p. 138-146.Research output: Contribution to journal › Article
TY - JOUR
T1 - Ultrafast laser ablation of indium tin oxide thin films for organic light-emitting diode application
AU - Park, Mira
AU - Chon, Byong Hyok
AU - Kim, Hyun Sun
AU - Jeoung, Sae Chae
AU - Kim, Dongho
AU - Lee, Jeoung Ik
AU - Chu, Hye Yong
AU - Kim, Hyeong Rae
PY - 2006/2/1
Y1 - 2006/2/1
N2 - Ultrafast laser ablation of ITO thin film coated on the glass has been investigated as a function of laser fluence as well as the number of laser pulses. The ablation threshold of ITO thin film was found to be 0.07 J/cm 2 that is much lower than that of glass substrate (about 1.2-1.6 J/cm2), which leads to a selective ablation of ITO film without damage on glass substrate. The changes in the electrical resistance and morphology of ablated trench of ITO electrode were found to be strongly dependent on the processing conditions. We present the performance of organic light-emitting diodes (OLED) fabricated with ITO electrode patterned by ultrafast laser ablation.
AB - Ultrafast laser ablation of ITO thin film coated on the glass has been investigated as a function of laser fluence as well as the number of laser pulses. The ablation threshold of ITO thin film was found to be 0.07 J/cm 2 that is much lower than that of glass substrate (about 1.2-1.6 J/cm2), which leads to a selective ablation of ITO film without damage on glass substrate. The changes in the electrical resistance and morphology of ablated trench of ITO electrode were found to be strongly dependent on the processing conditions. We present the performance of organic light-emitting diodes (OLED) fabricated with ITO electrode patterned by ultrafast laser ablation.
UR - http://www.scopus.com/inward/record.url?scp=27744487568&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=27744487568&partnerID=8YFLogxK
U2 - 10.1016/j.optlaseng.2005.03.009
DO - 10.1016/j.optlaseng.2005.03.009
M3 - Article
AN - SCOPUS:27744487568
VL - 44
SP - 138
EP - 146
JO - Optics and Lasers in Engineering
JF - Optics and Lasers in Engineering
SN - 0143-8166
IS - 2
ER -