Ultrafast laser ablation of ITO thin film coated on the glass has been investigated as a function of laser fluence as well as the number of laser pulses. The ablation threshold of ITO thin film was found to be 0.07 J/cm 2 that is much lower than that of glass substrate (about 1.2-1.6 J/cm2), which leads to a selective ablation of ITO film without damage on glass substrate. The changes in the electrical resistance and morphology of ablated trench of ITO electrode were found to be strongly dependent on the processing conditions. We present the performance of organic light-emitting diodes (OLED) fabricated with ITO electrode patterned by ultrafast laser ablation.
Bibliographical noteFunding Information:
This work was financially supported by Ministry of Science and Technology of Korea (S.C. Jeoung) and by Ministry of Information and Telecommunications of Korea (J.-I. Lee).
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Mechanical Engineering
- Electrical and Electronic Engineering