Ultrafast phase change and long durability of BN-incorporated GeSbTe

Moon Hyung Jang, Seung Jong Park, Min Ahn, Kwang Sik Jeong, Sung Jin Park, Mann-Ho Cho, Jae Yong Song, Hongsik Jeong

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

BN-incorporated amorphous Ge2Sb2Te5 (GST) films were deposited by an ion beam sputtering deposition (IBSD) method using GST and BN targets. Based on in situ sheet resistance measurements, we confirmed that as the amount of BN increased, the crystallization temperature (Tc) increased from 150 °C to 260°C. It was demonstrated that the phase change speed of BN-incorporated GST is ten times faster than that of GST using a nanosecond laser. By evaluating Johnson-Mehl-Avrami (JMA) plots and scanning electron microscopy (SEM) images, it was confirmed that the one-dimensional grain growth is dominant during the fast phase change of BN-incorporated GST because BN impurities can act like nuclei during the initial stage of crystal growth. After the 100 iteration test under rigorous acceleration conditions of SET/RESET switching using the pulsed laser system, it was confirmed that the void formation and thickness variation are very limited in the BN-incorporated GST, as compared to GST. This result originates from the low phase change stress of the BN-incorporated GST films during one-dimensional growth. The electrical SET speed and cyclability of the BN-incorporated GST device also improved significantly compared to GST.

Original languageEnglish
Pages (from-to)1707-1715
Number of pages9
JournalJournal of Materials Chemistry C
Volume3
Issue number8
DOIs
Publication statusPublished - 2015 Feb 28

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Crystallization
Durability
Sheet resistance
Amorphous films
Pulsed lasers
Grain growth
Crystal growth
Ion beams
Sputtering
Impurities
Scanning electron microscopy
Lasers
Temperature

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

Cite this

Jang, M. H., Park, S. J., Ahn, M., Jeong, K. S., Park, S. J., Cho, M-H., ... Jeong, H. (2015). Ultrafast phase change and long durability of BN-incorporated GeSbTe. Journal of Materials Chemistry C, 3(8), 1707-1715. https://doi.org/10.1039/c4tc02455a
Jang, Moon Hyung ; Park, Seung Jong ; Ahn, Min ; Jeong, Kwang Sik ; Park, Sung Jin ; Cho, Mann-Ho ; Song, Jae Yong ; Jeong, Hongsik. / Ultrafast phase change and long durability of BN-incorporated GeSbTe. In: Journal of Materials Chemistry C. 2015 ; Vol. 3, No. 8. pp. 1707-1715.
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Jang, MH, Park, SJ, Ahn, M, Jeong, KS, Park, SJ, Cho, M-H, Song, JY & Jeong, H 2015, 'Ultrafast phase change and long durability of BN-incorporated GeSbTe', Journal of Materials Chemistry C, vol. 3, no. 8, pp. 1707-1715. https://doi.org/10.1039/c4tc02455a

Ultrafast phase change and long durability of BN-incorporated GeSbTe. / Jang, Moon Hyung; Park, Seung Jong; Ahn, Min; Jeong, Kwang Sik; Park, Sung Jin; Cho, Mann-Ho; Song, Jae Yong; Jeong, Hongsik.

In: Journal of Materials Chemistry C, Vol. 3, No. 8, 28.02.2015, p. 1707-1715.

Research output: Contribution to journalArticle

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AU - Jeong, Hongsik

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