Ultrafast photoinduced absorption dynamics of CdS0.4Se0.6 nanostructure semiconductors doped in glass

Jung Chul Seo, Dongho Kim

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5 Citations (Scopus)


Ultrafast phenomena of photoinduced absorption far below the band gap of CdS0.4Se0.6 nanostructure semiconductors doped in glasses were investigated by using time-resolved differential transmittance spectroscopy. The carriers populating the semiconductor-glass interfaces within less than 1 ps after photoexcitation give rise to ultrafast photoinduced absorption. This transient photoinduced absorption decays with a lifetime shorter than 10 ps, which strongly depends on the excitation intensity. We assign this behavior to nongeminate electron-hole recombination at the semiconductor-glass interfaces.

Original languageEnglish
Pages (from-to)43-46
Number of pages4
JournalOptics Communications
Issue number1-3
Publication statusPublished - 1998 Oct 1

Bibliographical note

Funding Information:
This work has been supported by the Creative Research Initiatives of the Ministry of Science and Technology of Korea.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Physical and Theoretical Chemistry
  • Electrical and Electronic Engineering


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