Ultrafast photoinduced absorption dynamics of CdS0.4Se0.6 nanostructure semiconductors doped in glass

Jung Chul Seo, Dongho Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Ultrafast phenomena of photoinduced absorption far below the band gap of CdS0.4Se0.6 nanostructure semiconductors doped in glasses were investigated by using time-resolved differential transmittance spectroscopy. The carriers populating the semiconductor-glass interfaces within less than 1 ps after photoexcitation give rise to ultrafast photoinduced absorption. This transient photoinduced absorption decays with a lifetime shorter than 10 ps, which strongly depends on the excitation intensity. We assign this behavior to nongeminate electron-hole recombination at the semiconductor-glass interfaces.

Original languageEnglish
Pages (from-to)43-46
Number of pages4
JournalOptics Communications
Volume155
Issue number1-3
DOIs
Publication statusPublished - 1998 Oct 1

Fingerprint

Nanostructures
Semiconductor materials
Glass
glass
Ultrafast phenomena
Photoexcitation
photoexcitation
transmittance
Energy gap
Spectroscopy
life (durability)
Electrons
decay
spectroscopy
excitation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Physical and Theoretical Chemistry
  • Electrical and Electronic Engineering

Cite this

@article{d807c935556a40f4afc01ddf19c5a4e2,
title = "Ultrafast photoinduced absorption dynamics of CdS0.4Se0.6 nanostructure semiconductors doped in glass",
abstract = "Ultrafast phenomena of photoinduced absorption far below the band gap of CdS0.4Se0.6 nanostructure semiconductors doped in glasses were investigated by using time-resolved differential transmittance spectroscopy. The carriers populating the semiconductor-glass interfaces within less than 1 ps after photoexcitation give rise to ultrafast photoinduced absorption. This transient photoinduced absorption decays with a lifetime shorter than 10 ps, which strongly depends on the excitation intensity. We assign this behavior to nongeminate electron-hole recombination at the semiconductor-glass interfaces.",
author = "Seo, {Jung Chul} and Dongho Kim",
year = "1998",
month = "10",
day = "1",
doi = "10.1016/S0030-4018(98)00365-4",
language = "English",
volume = "155",
pages = "43--46",
journal = "Optics Communications",
issn = "0030-4018",
publisher = "Elsevier",
number = "1-3",

}

Ultrafast photoinduced absorption dynamics of CdS0.4Se0.6 nanostructure semiconductors doped in glass. / Seo, Jung Chul; Kim, Dongho.

In: Optics Communications, Vol. 155, No. 1-3, 01.10.1998, p. 43-46.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Ultrafast photoinduced absorption dynamics of CdS0.4Se0.6 nanostructure semiconductors doped in glass

AU - Seo, Jung Chul

AU - Kim, Dongho

PY - 1998/10/1

Y1 - 1998/10/1

N2 - Ultrafast phenomena of photoinduced absorption far below the band gap of CdS0.4Se0.6 nanostructure semiconductors doped in glasses were investigated by using time-resolved differential transmittance spectroscopy. The carriers populating the semiconductor-glass interfaces within less than 1 ps after photoexcitation give rise to ultrafast photoinduced absorption. This transient photoinduced absorption decays with a lifetime shorter than 10 ps, which strongly depends on the excitation intensity. We assign this behavior to nongeminate electron-hole recombination at the semiconductor-glass interfaces.

AB - Ultrafast phenomena of photoinduced absorption far below the band gap of CdS0.4Se0.6 nanostructure semiconductors doped in glasses were investigated by using time-resolved differential transmittance spectroscopy. The carriers populating the semiconductor-glass interfaces within less than 1 ps after photoexcitation give rise to ultrafast photoinduced absorption. This transient photoinduced absorption decays with a lifetime shorter than 10 ps, which strongly depends on the excitation intensity. We assign this behavior to nongeminate electron-hole recombination at the semiconductor-glass interfaces.

UR - http://www.scopus.com/inward/record.url?scp=0032183340&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032183340&partnerID=8YFLogxK

U2 - 10.1016/S0030-4018(98)00365-4

DO - 10.1016/S0030-4018(98)00365-4

M3 - Article

VL - 155

SP - 43

EP - 46

JO - Optics Communications

JF - Optics Communications

SN - 0030-4018

IS - 1-3

ER -