Ultrafast terahertz spectroscopy of the inverse giant piezoresistance effect in silicon nanomembranes

Jaeseok Kim; Houk Jang; Min Seok Kim; Jeong Ho Cho; Jong Hyun Ahn; Hyunyong Choi

Ultrafast terahertz spectroscopy of the inverse giant piezoresistance effect in silicon nanomembranes

Jaeseok Kim, Houk Jang, Min Seok Kim, Jeong Ho Cho, Jong Hyun Ahn, Hyunyong Choi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We observe the clear inverse piezoresistance effect in the silicon nanomembranes. Thickness-dependent optical-pump terahertz spectroscopy strongly corroborate that the effect originates from the carrier-concentration changes via charge carrier trapping into strain-induced defect states.

Original language	English
Title of host publication	2015 Conference on Lasers and Electro-Optics, CLEO 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781557529688
Publication status	Published - 2015 Aug 10
Event	Conference on Lasers and Electro-Optics, CLEO 2015 - San Jose, United States Duration: 2015 May 10 → 2015 May 15

Publication series

Name	Conference on Lasers and Electro-Optics Europe - Technical Digest
Volume	2015-August

Other

Other	Conference on Lasers and Electro-Optics, CLEO 2015
Country/Territory	United States
City	San Jose
Period	15/5/10 → 15/5/15

Bibliographical note

Publisher Copyright:
© 2015 OSA.

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials

Cite this

Kim, J., Jang, H., Kim, M. S., Cho, J. H., Ahn, J. H., & Choi, H. (2015). Ultrafast terahertz spectroscopy of the inverse giant piezoresistance effect in silicon nanomembranes. In 2015 Conference on Lasers and Electro-Optics, CLEO 2015 [7183343] (Conference on Lasers and Electro-Optics Europe - Technical Digest; Vol. 2015-August). Institute of Electrical and Electronics Engineers Inc..

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title = "Ultrafast terahertz spectroscopy of the inverse giant piezoresistance effect in silicon nanomembranes",

abstract = "We observe the clear inverse piezoresistance effect in the silicon nanomembranes. Thickness-dependent optical-pump terahertz spectroscopy strongly corroborate that the effect originates from the carrier-concentration changes via charge carrier trapping into strain-induced defect states.",

author = "Jaeseok Kim and Houk Jang and Kim, {Min Seok} and Cho, {Jeong Ho} and Ahn, {Jong Hyun} and Hyunyong Choi",

note = "Publisher Copyright: {\textcopyright} 2015 OSA.; Conference on Lasers and Electro-Optics, CLEO 2015 ; Conference date: 10-05-2015 Through 15-05-2015",

year = "2015",

month = aug,

day = "10",

language = "English",

series = "Conference on Lasers and Electro-Optics Europe - Technical Digest",

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Kim, J, Jang, H, Kim, MS, Cho, JH , Ahn, JH & Choi, H 2015, Ultrafast terahertz spectroscopy of the inverse giant piezoresistance effect in silicon nanomembranes. in 2015 Conference on Lasers and Electro-Optics, CLEO 2015., 7183343, Conference on Lasers and Electro-Optics Europe - Technical Digest, vol. 2015-August, Institute of Electrical and Electronics Engineers Inc., Conference on Lasers and Electro-Optics, CLEO 2015, San Jose, United States, 15/5/10.

Ultrafast terahertz spectroscopy of the inverse giant piezoresistance effect in silicon nanomembranes. / Kim, Jaeseok; Jang, Houk; Kim, Min Seok et al.

2015 Conference on Lasers and Electro-Optics, CLEO 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7183343 (Conference on Lasers and Electro-Optics Europe - Technical Digest; Vol. 2015-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Ultrafast terahertz spectroscopy of the inverse giant piezoresistance effect in silicon nanomembranes

AU - Kim, Jaeseok

AU - Jang, Houk

AU - Kim, Min Seok

AU - Cho, Jeong Ho

AU - Ahn, Jong Hyun

AU - Choi, Hyunyong

PY - 2015/8/10

Y1 - 2015/8/10

N2 - We observe the clear inverse piezoresistance effect in the silicon nanomembranes. Thickness-dependent optical-pump terahertz spectroscopy strongly corroborate that the effect originates from the carrier-concentration changes via charge carrier trapping into strain-induced defect states.

AB - We observe the clear inverse piezoresistance effect in the silicon nanomembranes. Thickness-dependent optical-pump terahertz spectroscopy strongly corroborate that the effect originates from the carrier-concentration changes via charge carrier trapping into strain-induced defect states.

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M3 - Conference contribution

AN - SCOPUS:84954044668

T3 - Conference on Lasers and Electro-Optics Europe - Technical Digest

BT - 2015 Conference on Lasers and Electro-Optics, CLEO 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - Conference on Lasers and Electro-Optics, CLEO 2015

Y2 - 10 May 2015 through 15 May 2015

ER -

Ultrafast terahertz spectroscopy of the inverse giant piezoresistance effect in silicon nanomembranes

Abstract

Publication series

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Bibliographical note

All Science Journal Classification (ASJC) codes

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