Abstract
We observe the clear inverse piezoresistance effect in the silicon nanomembranes. Thickness-dependent optical-pump terahertz spectroscopy strongly corroborate that the effect originates from the carrier-concentration changes via charge carrier trapping into strain-induced defect states.
| Original language | English |
|---|---|
| Title of host publication | 2015 Conference on Lasers and Electro-Optics, CLEO 2015 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9781557529688 |
| Publication status | Published - 2015 Aug 10 |
| Event | Conference on Lasers and Electro-Optics, CLEO 2015 - San Jose, United States Duration: 2015 May 10 → 2015 May 15 |
Publication series
| Name | Conference on Lasers and Electro-Optics Europe - Technical Digest |
|---|---|
| Volume | 2015-August |
Other
| Other | Conference on Lasers and Electro-Optics, CLEO 2015 |
|---|---|
| Country | United States |
| City | San Jose |
| Period | 15/5/10 → 15/5/15 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics
- Electronic, Optical and Magnetic Materials
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Cite this
Kim, J., Jang, H., Kim, M. S., Cho, J. H., Ahn, J. H., & Choi, H. (2015). Ultrafast terahertz spectroscopy of the inverse giant piezoresistance effect in silicon nanomembranes. In 2015 Conference on Lasers and Electro-Optics, CLEO 2015 [7183343] (Conference on Lasers and Electro-Optics Europe - Technical Digest; Vol. 2015-August). Institute of Electrical and Electronics Engineers Inc..