Ultrafast terahertz spectroscopy of the inverse giant piezoresistance effect in silicon nanomembranes

Jaeseok Kim, Houk Jang, Min Seok Kim, Jeong Ho Cho, Jong Hyun Ahn, Hyunyong Choi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We observe the clear inverse piezoresistance effect in the silicon nanomembranes. Thickness-dependent optical-pump terahertz spectroscopy strongly corroborate that the effect originates from the carrier-concentration changes via charge carrier trapping into strain-induced defect states.

Original languageEnglish
Title of host publication2015 Conference on Lasers and Electro-Optics, CLEO 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781557529688
Publication statusPublished - 2015 Aug 10
EventConference on Lasers and Electro-Optics, CLEO 2015 - San Jose, United States
Duration: 2015 May 102015 May 15

Publication series

NameConference on Lasers and Electro-Optics Europe - Technical Digest
Volume2015-August

Other

OtherConference on Lasers and Electro-Optics, CLEO 2015
CountryUnited States
CitySan Jose
Period15/5/1015/5/15

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'Ultrafast terahertz spectroscopy of the inverse giant piezoresistance effect in silicon nanomembranes'. Together they form a unique fingerprint.

  • Cite this

    Kim, J., Jang, H., Kim, M. S., Cho, J. H., Ahn, J. H., & Choi, H. (2015). Ultrafast terahertz spectroscopy of the inverse giant piezoresistance effect in silicon nanomembranes. In 2015 Conference on Lasers and Electro-Optics, CLEO 2015 [7183343] (Conference on Lasers and Electro-Optics Europe - Technical Digest; Vol. 2015-August). Institute of Electrical and Electronics Engineers Inc..