### Abstract

Si(001) layers doped with B concentrations (Formula presented) between (Formula presented) and (Formula presented) (24 at %) were grown on (Formula presented) at temperatures (Formula presented) by gas-source molecular-beam epitaxy from (Formula presented) and (Formula presented) increases linearly with the incident precursor flux ratio (Formula presented) and B is incorporated into substitutional electrically active sites at concentrations up to (Formula presented) which, for (Formula presented) is (Formula presented) At higher B concentrations, (Formula presented) increases faster than (Formula presented) and there is a large and discontinuous decrease in the activated fraction of incorporated B. However, the total activated B concentration continues to increase and reaches a value of (Formula presented) with (Formula presented) High-resolution x-ray diffraction (HR-XRD) and reciprocal space mapping measurements show that all films, irrespective of (Formula presented) and (Formula presented) are fully strained. No B precipitates or misfit dislocations were detected by HR-XRD or transmission electron microscopy. The lattice constant in the film growth direction (Formula presented) decreases linearly with increasing (Formula presented) up to the limit of full electrical activation and continues to decrease, but nonlinearly, with (Formula presented) Room-temperature resistivity and conductivity mobility values are in good agreement with theoretical values for B concentrations up to (Formula presented) and (Formula presented) respectively. All results can be explained on the basis of a model which accounts for strong B surface segregation to the second-layer with a saturation coverage (Formula presented) of 0.5 ML (corresponding to (Formula presented) At higher (Formula presented) (i.e., (Formula presented) B accumulates in the upper layer as shown by thermally programmed desorption measurements, and a parallel incorporation channel becomes available in which B is incorporated into substitutional sites as B pairs that are electrically inactive but have a low charge-scattering cross section.

Original language | English |
---|---|

Pages (from-to) | 7628-7644 |

Number of pages | 17 |

Journal | Physical Review B - Condensed Matter and Materials Physics |

Volume | 61 |

Issue number | 11 |

DOIs | |

Publication status | Published - 2000 Jan 1 |

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### All Science Journal Classification (ASJC) codes

- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics

### Cite this

*Physical Review B - Condensed Matter and Materials Physics*,

*61*(11), 7628-7644. https://doi.org/10.1103/PhysRevB.61.7628

}

*Physical Review B - Condensed Matter and Materials Physics*, vol. 61, no. 11, pp. 7628-7644. https://doi.org/10.1103/PhysRevB.61.7628

**Ultrahigh B doping during Si(001) gas-source molecular-beam epitaxy : B incorporation, electrical activation, and hole transport.** / Glass, G.; Kim, Hyungjun; Desjardins, P.; Taylor, N.; Spila, T.; Lu, Q.; Greene, J.

Research output: Contribution to journal › Article

TY - JOUR

T1 - Ultrahigh B doping during Si(001) gas-source molecular-beam epitaxy

T2 - B incorporation, electrical activation, and hole transport

AU - Glass, G.

AU - Kim, Hyungjun

AU - Desjardins, P.

AU - Taylor, N.

AU - Spila, T.

AU - Lu, Q.

AU - Greene, J.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - Si(001) layers doped with B concentrations (Formula presented) between (Formula presented) and (Formula presented) (24 at %) were grown on (Formula presented) at temperatures (Formula presented) by gas-source molecular-beam epitaxy from (Formula presented) and (Formula presented) increases linearly with the incident precursor flux ratio (Formula presented) and B is incorporated into substitutional electrically active sites at concentrations up to (Formula presented) which, for (Formula presented) is (Formula presented) At higher B concentrations, (Formula presented) increases faster than (Formula presented) and there is a large and discontinuous decrease in the activated fraction of incorporated B. However, the total activated B concentration continues to increase and reaches a value of (Formula presented) with (Formula presented) High-resolution x-ray diffraction (HR-XRD) and reciprocal space mapping measurements show that all films, irrespective of (Formula presented) and (Formula presented) are fully strained. No B precipitates or misfit dislocations were detected by HR-XRD or transmission electron microscopy. The lattice constant in the film growth direction (Formula presented) decreases linearly with increasing (Formula presented) up to the limit of full electrical activation and continues to decrease, but nonlinearly, with (Formula presented) Room-temperature resistivity and conductivity mobility values are in good agreement with theoretical values for B concentrations up to (Formula presented) and (Formula presented) respectively. All results can be explained on the basis of a model which accounts for strong B surface segregation to the second-layer with a saturation coverage (Formula presented) of 0.5 ML (corresponding to (Formula presented) At higher (Formula presented) (i.e., (Formula presented) B accumulates in the upper layer as shown by thermally programmed desorption measurements, and a parallel incorporation channel becomes available in which B is incorporated into substitutional sites as B pairs that are electrically inactive but have a low charge-scattering cross section.

AB - Si(001) layers doped with B concentrations (Formula presented) between (Formula presented) and (Formula presented) (24 at %) were grown on (Formula presented) at temperatures (Formula presented) by gas-source molecular-beam epitaxy from (Formula presented) and (Formula presented) increases linearly with the incident precursor flux ratio (Formula presented) and B is incorporated into substitutional electrically active sites at concentrations up to (Formula presented) which, for (Formula presented) is (Formula presented) At higher B concentrations, (Formula presented) increases faster than (Formula presented) and there is a large and discontinuous decrease in the activated fraction of incorporated B. However, the total activated B concentration continues to increase and reaches a value of (Formula presented) with (Formula presented) High-resolution x-ray diffraction (HR-XRD) and reciprocal space mapping measurements show that all films, irrespective of (Formula presented) and (Formula presented) are fully strained. No B precipitates or misfit dislocations were detected by HR-XRD or transmission electron microscopy. The lattice constant in the film growth direction (Formula presented) decreases linearly with increasing (Formula presented) up to the limit of full electrical activation and continues to decrease, but nonlinearly, with (Formula presented) Room-temperature resistivity and conductivity mobility values are in good agreement with theoretical values for B concentrations up to (Formula presented) and (Formula presented) respectively. All results can be explained on the basis of a model which accounts for strong B surface segregation to the second-layer with a saturation coverage (Formula presented) of 0.5 ML (corresponding to (Formula presented) At higher (Formula presented) (i.e., (Formula presented) B accumulates in the upper layer as shown by thermally programmed desorption measurements, and a parallel incorporation channel becomes available in which B is incorporated into substitutional sites as B pairs that are electrically inactive but have a low charge-scattering cross section.

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U2 - 10.1103/PhysRevB.61.7628

DO - 10.1103/PhysRevB.61.7628

M3 - Article

VL - 61

SP - 7628

EP - 7644

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 11

ER -