An increase in resistance and capacitance (RC) delay has been a critical issue in reducing integrated circuit scales. The delay is successfully reduced using low dielectric constant (κ) interconnects and porous low-κ materials adopted in real devices. However, an increase in porosity could lower κ values with a dramatic decrease in elastic modulus, which would not sustain the stress during the packaging process. Highly porous cross-linked silica aerogel thin film with an ultralow-κ value of 1.7 applied to nanodevice interconnect technology has been suggested. Cross-linking using an epoxide ring-opening reaction produced a high elastic modulus (> 5.1 GPa), stable enough to sustain the chemical mechanical polishing (CMP) and the plasma dry etching process. The thickness of aerogel films is approximately 700 nm with a hydrophobic surface. Closed-surface pores created by selective solvent evaporation can prevent metal penetration. Our cross-linked aerogel films are the first among the low-dielectric aerogel films validated as interlayer low-dielectric materials and robust candidates for ultralow -κ dielectric materials.
|Journal||Applied Materials Today|
|Publication status||Published - 2022 Aug|
Bibliographical noteFunding Information:
Haryeong Choi, Taehee Kim and Taeho Kim contributed equally to this work. This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. 2020R1A5A1019131 ). This work was supported by Samsung Research Funding & Incubation Center of Samsung Electronics under Project Number SRFC-TA1703-04.
© 2022 Elsevier Ltd
All Science Journal Classification (ASJC) codes
- Materials Science(all)