Ultralow Lattice Thermal Conductivity and Enhanced Thermoelectric Performance in SnTe:Ga Materials

Rabih Al Rahal Al Orabi, Junphil Hwang, Chan Chieh Lin, Régis Gautier, Bruno Fontaine, Woochul Kim, Jong Soo Rhyee, Daehyun Wee, Marco Fornari

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

Ultralow thermal conductivity is of great interest in a variety of fields, including thermoelectric energy conversion. We report, for the first time, experimental evidence that Ga-doping in SnTe may lower the lattice thermal conduction slightly below the theoretical amorphous minimum at high temperature. Such an effect is justified by the spontaneous formation of nanoprecipitates we characterized as GaTe. Remarkably, the introduction of Ga (2-10%) in SnTe also improves the electronic transport properties by activating several hole pockets in the multivalley valence band. Experimental results are supported by density functional theory calculations. The thermoelectric figure of merit, ZT, reaches ∼1 at 873 K in Sn0.96Ga0.07Te, which corresponds to an ∼80% improvement with respect to pure SnTe.

Original languageEnglish
Pages (from-to)612-620
Number of pages9
JournalChemistry of Materials
Volume29
Issue number2
DOIs
Publication statusPublished - 2017 Jan 24

Fingerprint

Thermoelectric energy conversion
Valence bands
Transport properties
Density functional theory
Thermal conductivity
Doping (additives)
Temperature
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

Cite this

Al Rahal Al Orabi, R., Hwang, J., Lin, C. C., Gautier, R., Fontaine, B., Kim, W., ... Fornari, M. (2017). Ultralow Lattice Thermal Conductivity and Enhanced Thermoelectric Performance in SnTe:Ga Materials. Chemistry of Materials, 29(2), 612-620. https://doi.org/10.1021/acs.chemmater.6b04076
Al Rahal Al Orabi, Rabih ; Hwang, Junphil ; Lin, Chan Chieh ; Gautier, Régis ; Fontaine, Bruno ; Kim, Woochul ; Rhyee, Jong Soo ; Wee, Daehyun ; Fornari, Marco. / Ultralow Lattice Thermal Conductivity and Enhanced Thermoelectric Performance in SnTe:Ga Materials. In: Chemistry of Materials. 2017 ; Vol. 29, No. 2. pp. 612-620.
@article{f68b6825d10749dca5cca1c7d236a48a,
title = "Ultralow Lattice Thermal Conductivity and Enhanced Thermoelectric Performance in SnTe:Ga Materials",
abstract = "Ultralow thermal conductivity is of great interest in a variety of fields, including thermoelectric energy conversion. We report, for the first time, experimental evidence that Ga-doping in SnTe may lower the lattice thermal conduction slightly below the theoretical amorphous minimum at high temperature. Such an effect is justified by the spontaneous formation of nanoprecipitates we characterized as GaTe. Remarkably, the introduction of Ga (2-10{\%}) in SnTe also improves the electronic transport properties by activating several hole pockets in the multivalley valence band. Experimental results are supported by density functional theory calculations. The thermoelectric figure of merit, ZT, reaches ∼1 at 873 K in Sn0.96Ga0.07Te, which corresponds to an ∼80{\%} improvement with respect to pure SnTe.",
author = "{Al Rahal Al Orabi}, Rabih and Junphil Hwang and Lin, {Chan Chieh} and R{\'e}gis Gautier and Bruno Fontaine and Woochul Kim and Rhyee, {Jong Soo} and Daehyun Wee and Marco Fornari",
year = "2017",
month = "1",
day = "24",
doi = "10.1021/acs.chemmater.6b04076",
language = "English",
volume = "29",
pages = "612--620",
journal = "Chemistry of Materials",
issn = "0897-4756",
publisher = "American Chemical Society",
number = "2",

}

Al Rahal Al Orabi, R, Hwang, J, Lin, CC, Gautier, R, Fontaine, B, Kim, W, Rhyee, JS, Wee, D & Fornari, M 2017, 'Ultralow Lattice Thermal Conductivity and Enhanced Thermoelectric Performance in SnTe:Ga Materials', Chemistry of Materials, vol. 29, no. 2, pp. 612-620. https://doi.org/10.1021/acs.chemmater.6b04076

Ultralow Lattice Thermal Conductivity and Enhanced Thermoelectric Performance in SnTe:Ga Materials. / Al Rahal Al Orabi, Rabih; Hwang, Junphil; Lin, Chan Chieh; Gautier, Régis; Fontaine, Bruno; Kim, Woochul; Rhyee, Jong Soo; Wee, Daehyun; Fornari, Marco.

In: Chemistry of Materials, Vol. 29, No. 2, 24.01.2017, p. 612-620.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Ultralow Lattice Thermal Conductivity and Enhanced Thermoelectric Performance in SnTe:Ga Materials

AU - Al Rahal Al Orabi, Rabih

AU - Hwang, Junphil

AU - Lin, Chan Chieh

AU - Gautier, Régis

AU - Fontaine, Bruno

AU - Kim, Woochul

AU - Rhyee, Jong Soo

AU - Wee, Daehyun

AU - Fornari, Marco

PY - 2017/1/24

Y1 - 2017/1/24

N2 - Ultralow thermal conductivity is of great interest in a variety of fields, including thermoelectric energy conversion. We report, for the first time, experimental evidence that Ga-doping in SnTe may lower the lattice thermal conduction slightly below the theoretical amorphous minimum at high temperature. Such an effect is justified by the spontaneous formation of nanoprecipitates we characterized as GaTe. Remarkably, the introduction of Ga (2-10%) in SnTe also improves the electronic transport properties by activating several hole pockets in the multivalley valence band. Experimental results are supported by density functional theory calculations. The thermoelectric figure of merit, ZT, reaches ∼1 at 873 K in Sn0.96Ga0.07Te, which corresponds to an ∼80% improvement with respect to pure SnTe.

AB - Ultralow thermal conductivity is of great interest in a variety of fields, including thermoelectric energy conversion. We report, for the first time, experimental evidence that Ga-doping in SnTe may lower the lattice thermal conduction slightly below the theoretical amorphous minimum at high temperature. Such an effect is justified by the spontaneous formation of nanoprecipitates we characterized as GaTe. Remarkably, the introduction of Ga (2-10%) in SnTe also improves the electronic transport properties by activating several hole pockets in the multivalley valence band. Experimental results are supported by density functional theory calculations. The thermoelectric figure of merit, ZT, reaches ∼1 at 873 K in Sn0.96Ga0.07Te, which corresponds to an ∼80% improvement with respect to pure SnTe.

UR - http://www.scopus.com/inward/record.url?scp=85018193311&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85018193311&partnerID=8YFLogxK

U2 - 10.1021/acs.chemmater.6b04076

DO - 10.1021/acs.chemmater.6b04076

M3 - Article

AN - SCOPUS:85018193311

VL - 29

SP - 612

EP - 620

JO - Chemistry of Materials

JF - Chemistry of Materials

SN - 0897-4756

IS - 2

ER -