Ultrasensitive, Low-Power Oxide Transistor-Based Mechanotransducer with Microstructured, Deformable Ionic Dielectrics

Sukjin Jang, Eunsong Jee, Daehwan Choi, Wook Kim, Joo Sung Kim, Vipin Amoli, Taehoon Sung, Dukhyun Choi, Do Hwan Kim, Jang Yeon Kwon

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The development of a highly sensitive artificial mechanotransducer that mimics the tactile sensing features of human skin has been a big challenge in electronic skin research. Here, we demonstrate an ultrasensitive, low-power oxide transistor-based mechanotransducer modulated by microstructured, deformable ionic dielectrics, which is consistently sensitive to a wide range of pressures from 1 to 50 kPa. To this end, we designed a viscoporoelastic and ionic thermoplastic polyurethane (i-TPU) with micropyramidal feature as a pressure-sensitive gate dielectric for the indium-gallium-zinc-oxide (IGZO) transistor-based mechanotransducer, which leads to an unprecedented sensitivity of 43.6 kPa-1, which is 23 times higher than that of a capacitive mechanotransducer. This is because the pressure-induced ion accumulation at the interface of the i-TPU dielectric and IGZO semiconductor effectively modulates the conducting channel, which contributed to the enhanced current level under pressure. We believe that the ionic transistor-type mechanotransducer suggested by us will be an effective way to perceive external tactile stimuli over a wide pressure range even under low power (<4 V), which might be one of the candidates to directly emulate the tactile sensing capability of human skin.

Original languageEnglish
Pages (from-to)31472-31479
Number of pages8
JournalACS Applied Materials and Interfaces
Volume10
Issue number37
DOIs
Publication statusPublished - 2018 Sep 19

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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