Ultrasensitive PbS quantum-dot-sensitized InGaZnO hybrid photoinverter for near-infrared detection and imaging with high photogain

Do Kyung Hwang, Young Tack Lee, Hee Sung Lee, Yun Jae Lee, Seyed Hossein Shokouh, Ji Hoon Kyhm, Junyeong Lee, Hong Hee Kim, Tae Hee Yoo, Seung Hee Nam, Dong Ick Son, Byeong Kwon Ju, Min Chul Park, Jin Dong Song, Won Kook Choi, Seongil Im

Research output: Contribution to journalArticle

46 Citations (Scopus)

Abstract

Lead sulfide (PbS) quantum dots (QDs) have great potential in optoelectronic applications because of their desirable characteristics as a light absorber for near-infrared (NIR) photodetection. However, most PbS-based NIR photodetectors are two-terminal devices, which require an integrated pixel circuit to be practical photosensors. Here we report on PbS QD/indium gallium zinc oxide (InGaZnO, IGZO) metal oxide semiconductor hybrid phototransistors with a photodetection capability between 700 and 1400 nm, a range that neither conventional Si nor InGaAs photodetectors can cover. The new hybrid phototransistor exhibits excellent photoresponsivity of over 106AW-1 and a specific detectivity in the order of 1013 Jones for NIR (1000 nm) light. Furthermore, we demonstrate an NIR (1300 nm) imager using photogating inverter pixels based on PbS/IGZO phototransistors at an imaging frequency of 1 Hz with a high output voltage photogain of ∼ 4.9 V (∼99%). To the best of our knowledge, this report demonstrates the first QD/metal oxide hybrid phototransistor-based flat panel NIR imager. Our hybrid approach using QD/metal oxide paves the way for the development of gate-tunable and highly sensitive flat panel NIR sensors/imagers that can be easily integrated.

Original languageEnglish
Article numbere233
JournalNPG Asia Materials
Volume8
Issue number1
DOIs
Publication statusPublished - 2016 Jan 8

Fingerprint

phototransistors
Quantum Dots
Phototransistors
Semiconductor quantum dots
Infrared
quantum dots
Imaging
Infrared radiation
Imaging techniques
Imager
Image sensors
metal oxides
Oxides
photometers
Metals
pixels
Photodetector
Photodetectors
photosensors
lead sulfides

All Science Journal Classification (ASJC) codes

  • Modelling and Simulation
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Hwang, Do Kyung ; Lee, Young Tack ; Lee, Hee Sung ; Lee, Yun Jae ; Shokouh, Seyed Hossein ; Kyhm, Ji Hoon ; Lee, Junyeong ; Kim, Hong Hee ; Yoo, Tae Hee ; Nam, Seung Hee ; Son, Dong Ick ; Ju, Byeong Kwon ; Park, Min Chul ; Song, Jin Dong ; Choi, Won Kook ; Im, Seongil. / Ultrasensitive PbS quantum-dot-sensitized InGaZnO hybrid photoinverter for near-infrared detection and imaging with high photogain. In: NPG Asia Materials. 2016 ; Vol. 8, No. 1.
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title = "Ultrasensitive PbS quantum-dot-sensitized InGaZnO hybrid photoinverter for near-infrared detection and imaging with high photogain",
abstract = "Lead sulfide (PbS) quantum dots (QDs) have great potential in optoelectronic applications because of their desirable characteristics as a light absorber for near-infrared (NIR) photodetection. However, most PbS-based NIR photodetectors are two-terminal devices, which require an integrated pixel circuit to be practical photosensors. Here we report on PbS QD/indium gallium zinc oxide (InGaZnO, IGZO) metal oxide semiconductor hybrid phototransistors with a photodetection capability between 700 and 1400 nm, a range that neither conventional Si nor InGaAs photodetectors can cover. The new hybrid phototransistor exhibits excellent photoresponsivity of over 106AW-1 and a specific detectivity in the order of 1013 Jones for NIR (1000 nm) light. Furthermore, we demonstrate an NIR (1300 nm) imager using photogating inverter pixels based on PbS/IGZO phototransistors at an imaging frequency of 1 Hz with a high output voltage photogain of ∼ 4.9 V (∼99{\%}). To the best of our knowledge, this report demonstrates the first QD/metal oxide hybrid phototransistor-based flat panel NIR imager. Our hybrid approach using QD/metal oxide paves the way for the development of gate-tunable and highly sensitive flat panel NIR sensors/imagers that can be easily integrated.",
author = "Hwang, {Do Kyung} and Lee, {Young Tack} and Lee, {Hee Sung} and Lee, {Yun Jae} and Shokouh, {Seyed Hossein} and Kyhm, {Ji Hoon} and Junyeong Lee and Kim, {Hong Hee} and Yoo, {Tae Hee} and Nam, {Seung Hee} and Son, {Dong Ick} and Ju, {Byeong Kwon} and Park, {Min Chul} and Song, {Jin Dong} and Choi, {Won Kook} and Seongil Im",
year = "2016",
month = "1",
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Hwang, DK, Lee, YT, Lee, HS, Lee, YJ, Shokouh, SH, Kyhm, JH, Lee, J, Kim, HH, Yoo, TH, Nam, SH, Son, DI, Ju, BK, Park, MC, Song, JD, Choi, WK & Im, S 2016, 'Ultrasensitive PbS quantum-dot-sensitized InGaZnO hybrid photoinverter for near-infrared detection and imaging with high photogain', NPG Asia Materials, vol. 8, no. 1, e233. https://doi.org/10.1038/am.2015.137

Ultrasensitive PbS quantum-dot-sensitized InGaZnO hybrid photoinverter for near-infrared detection and imaging with high photogain. / Hwang, Do Kyung; Lee, Young Tack; Lee, Hee Sung; Lee, Yun Jae; Shokouh, Seyed Hossein; Kyhm, Ji Hoon; Lee, Junyeong; Kim, Hong Hee; Yoo, Tae Hee; Nam, Seung Hee; Son, Dong Ick; Ju, Byeong Kwon; Park, Min Chul; Song, Jin Dong; Choi, Won Kook; Im, Seongil.

In: NPG Asia Materials, Vol. 8, No. 1, e233, 08.01.2016.

Research output: Contribution to journalArticle

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T1 - Ultrasensitive PbS quantum-dot-sensitized InGaZnO hybrid photoinverter for near-infrared detection and imaging with high photogain

AU - Hwang, Do Kyung

AU - Lee, Young Tack

AU - Lee, Hee Sung

AU - Lee, Yun Jae

AU - Shokouh, Seyed Hossein

AU - Kyhm, Ji Hoon

AU - Lee, Junyeong

AU - Kim, Hong Hee

AU - Yoo, Tae Hee

AU - Nam, Seung Hee

AU - Son, Dong Ick

AU - Ju, Byeong Kwon

AU - Park, Min Chul

AU - Song, Jin Dong

AU - Choi, Won Kook

AU - Im, Seongil

PY - 2016/1/8

Y1 - 2016/1/8

N2 - Lead sulfide (PbS) quantum dots (QDs) have great potential in optoelectronic applications because of their desirable characteristics as a light absorber for near-infrared (NIR) photodetection. However, most PbS-based NIR photodetectors are two-terminal devices, which require an integrated pixel circuit to be practical photosensors. Here we report on PbS QD/indium gallium zinc oxide (InGaZnO, IGZO) metal oxide semiconductor hybrid phototransistors with a photodetection capability between 700 and 1400 nm, a range that neither conventional Si nor InGaAs photodetectors can cover. The new hybrid phototransistor exhibits excellent photoresponsivity of over 106AW-1 and a specific detectivity in the order of 1013 Jones for NIR (1000 nm) light. Furthermore, we demonstrate an NIR (1300 nm) imager using photogating inverter pixels based on PbS/IGZO phototransistors at an imaging frequency of 1 Hz with a high output voltage photogain of ∼ 4.9 V (∼99%). To the best of our knowledge, this report demonstrates the first QD/metal oxide hybrid phototransistor-based flat panel NIR imager. Our hybrid approach using QD/metal oxide paves the way for the development of gate-tunable and highly sensitive flat panel NIR sensors/imagers that can be easily integrated.

AB - Lead sulfide (PbS) quantum dots (QDs) have great potential in optoelectronic applications because of their desirable characteristics as a light absorber for near-infrared (NIR) photodetection. However, most PbS-based NIR photodetectors are two-terminal devices, which require an integrated pixel circuit to be practical photosensors. Here we report on PbS QD/indium gallium zinc oxide (InGaZnO, IGZO) metal oxide semiconductor hybrid phototransistors with a photodetection capability between 700 and 1400 nm, a range that neither conventional Si nor InGaAs photodetectors can cover. The new hybrid phototransistor exhibits excellent photoresponsivity of over 106AW-1 and a specific detectivity in the order of 1013 Jones for NIR (1000 nm) light. Furthermore, we demonstrate an NIR (1300 nm) imager using photogating inverter pixels based on PbS/IGZO phototransistors at an imaging frequency of 1 Hz with a high output voltage photogain of ∼ 4.9 V (∼99%). To the best of our knowledge, this report demonstrates the first QD/metal oxide hybrid phototransistor-based flat panel NIR imager. Our hybrid approach using QD/metal oxide paves the way for the development of gate-tunable and highly sensitive flat panel NIR sensors/imagers that can be easily integrated.

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