Ultrasmooth, high electron mobility amorphous In-Zn-O films grown by atomic layer deposition

Do Joong Lee, Jang Yeon Kwon, Jiyeon Kim, Ki Ju Kim, Yeong Ho Cho, Seong Yong Cho, Soo Hyun Kim, Jimmy Xu, Ki Bum Kim

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

Ultrasmooth and highly conductive amorphous In-Zn-O (a-IZO) films are grown by atomic layer deposition (ALD). This opens a new pathway to highly transparent and conductive oxides with an extreme conformality. In this process, a-IZO films of various compositions are deposited by alternate stacking of ZnO and In2O3 atomic-layers at a temperature of 200 C. The IZO films have an amorphous phase over a wide composition range, 43.2-91.5 at %, of In cation ratio. The In-rich a-IZO film (83.2 at % In) exhibits a very low resistivity of 3.9 × 10-4 Ω cm and extremely high electron mobility in excess of 50 cm2 V-1 s-1, one of the highest among the reported ALD-grown transparent conducting oxides. Moreover, it exhibits an ultrasmooth surface (∼0.2 nm in root-mean-square roughness), and can be conformally coated onto nanotrench structures (inlet size: 25 nm) with excellent step coverage of 96%.

Original languageEnglish
Pages (from-to)408-415
Number of pages8
JournalJournal of Physical Chemistry C
Volume118
Issue number1
DOIs
Publication statusPublished - 2014 Jan 9

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Atomic layer deposition
Electron mobility
atomic layer epitaxy
electron mobility
Oxides
oxides
Chemical analysis
Cations
roughness
Surface roughness
Positive ions
cations
conduction
electrical resistivity
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

Cite this

Lee, Do Joong ; Kwon, Jang Yeon ; Kim, Jiyeon ; Kim, Ki Ju ; Cho, Yeong Ho ; Cho, Seong Yong ; Kim, Soo Hyun ; Xu, Jimmy ; Kim, Ki Bum. / Ultrasmooth, high electron mobility amorphous In-Zn-O films grown by atomic layer deposition. In: Journal of Physical Chemistry C. 2014 ; Vol. 118, No. 1. pp. 408-415.
@article{ada2317eed81476a94ef9052e5b11d5d,
title = "Ultrasmooth, high electron mobility amorphous In-Zn-O films grown by atomic layer deposition",
abstract = "Ultrasmooth and highly conductive amorphous In-Zn-O (a-IZO) films are grown by atomic layer deposition (ALD). This opens a new pathway to highly transparent and conductive oxides with an extreme conformality. In this process, a-IZO films of various compositions are deposited by alternate stacking of ZnO and In2O3 atomic-layers at a temperature of 200 C. The IZO films have an amorphous phase over a wide composition range, 43.2-91.5 at {\%}, of In cation ratio. The In-rich a-IZO film (83.2 at {\%} In) exhibits a very low resistivity of 3.9 × 10-4 Ω cm and extremely high electron mobility in excess of 50 cm2 V-1 s-1, one of the highest among the reported ALD-grown transparent conducting oxides. Moreover, it exhibits an ultrasmooth surface (∼0.2 nm in root-mean-square roughness), and can be conformally coated onto nanotrench structures (inlet size: 25 nm) with excellent step coverage of 96{\%}.",
author = "Lee, {Do Joong} and Kwon, {Jang Yeon} and Jiyeon Kim and Kim, {Ki Ju} and Cho, {Yeong Ho} and Cho, {Seong Yong} and Kim, {Soo Hyun} and Jimmy Xu and Kim, {Ki Bum}",
year = "2014",
month = "1",
day = "9",
doi = "10.1021/jp409738f",
language = "English",
volume = "118",
pages = "408--415",
journal = "Journal of Physical Chemistry C",
issn = "1932-7447",
publisher = "American Chemical Society",
number = "1",

}

Lee, DJ, Kwon, JY, Kim, J, Kim, KJ, Cho, YH, Cho, SY, Kim, SH, Xu, J & Kim, KB 2014, 'Ultrasmooth, high electron mobility amorphous In-Zn-O films grown by atomic layer deposition', Journal of Physical Chemistry C, vol. 118, no. 1, pp. 408-415. https://doi.org/10.1021/jp409738f

Ultrasmooth, high electron mobility amorphous In-Zn-O films grown by atomic layer deposition. / Lee, Do Joong; Kwon, Jang Yeon; Kim, Jiyeon; Kim, Ki Ju; Cho, Yeong Ho; Cho, Seong Yong; Kim, Soo Hyun; Xu, Jimmy; Kim, Ki Bum.

In: Journal of Physical Chemistry C, Vol. 118, No. 1, 09.01.2014, p. 408-415.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Ultrasmooth, high electron mobility amorphous In-Zn-O films grown by atomic layer deposition

AU - Lee, Do Joong

AU - Kwon, Jang Yeon

AU - Kim, Jiyeon

AU - Kim, Ki Ju

AU - Cho, Yeong Ho

AU - Cho, Seong Yong

AU - Kim, Soo Hyun

AU - Xu, Jimmy

AU - Kim, Ki Bum

PY - 2014/1/9

Y1 - 2014/1/9

N2 - Ultrasmooth and highly conductive amorphous In-Zn-O (a-IZO) films are grown by atomic layer deposition (ALD). This opens a new pathway to highly transparent and conductive oxides with an extreme conformality. In this process, a-IZO films of various compositions are deposited by alternate stacking of ZnO and In2O3 atomic-layers at a temperature of 200 C. The IZO films have an amorphous phase over a wide composition range, 43.2-91.5 at %, of In cation ratio. The In-rich a-IZO film (83.2 at % In) exhibits a very low resistivity of 3.9 × 10-4 Ω cm and extremely high electron mobility in excess of 50 cm2 V-1 s-1, one of the highest among the reported ALD-grown transparent conducting oxides. Moreover, it exhibits an ultrasmooth surface (∼0.2 nm in root-mean-square roughness), and can be conformally coated onto nanotrench structures (inlet size: 25 nm) with excellent step coverage of 96%.

AB - Ultrasmooth and highly conductive amorphous In-Zn-O (a-IZO) films are grown by atomic layer deposition (ALD). This opens a new pathway to highly transparent and conductive oxides with an extreme conformality. In this process, a-IZO films of various compositions are deposited by alternate stacking of ZnO and In2O3 atomic-layers at a temperature of 200 C. The IZO films have an amorphous phase over a wide composition range, 43.2-91.5 at %, of In cation ratio. The In-rich a-IZO film (83.2 at % In) exhibits a very low resistivity of 3.9 × 10-4 Ω cm and extremely high electron mobility in excess of 50 cm2 V-1 s-1, one of the highest among the reported ALD-grown transparent conducting oxides. Moreover, it exhibits an ultrasmooth surface (∼0.2 nm in root-mean-square roughness), and can be conformally coated onto nanotrench structures (inlet size: 25 nm) with excellent step coverage of 96%.

UR - http://www.scopus.com/inward/record.url?scp=84892584169&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84892584169&partnerID=8YFLogxK

U2 - 10.1021/jp409738f

DO - 10.1021/jp409738f

M3 - Article

AN - SCOPUS:84892584169

VL - 118

SP - 408

EP - 415

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

SN - 1932-7447

IS - 1

ER -