Ultrasmooth, high electron mobility amorphous In-Zn-O films grown by atomic layer deposition

Do Joong Lee, Jang Yeon Kwon, Jiyeon Kim, Ki Ju Kim, Yeong Ho Cho, Seong Yong Cho, Soo Hyun Kim, Jimmy Xu, Ki Bum Kim

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30 Citations (Scopus)

Abstract

Ultrasmooth and highly conductive amorphous In-Zn-O (a-IZO) films are grown by atomic layer deposition (ALD). This opens a new pathway to highly transparent and conductive oxides with an extreme conformality. In this process, a-IZO films of various compositions are deposited by alternate stacking of ZnO and In2O3 atomic-layers at a temperature of 200 C. The IZO films have an amorphous phase over a wide composition range, 43.2-91.5 at %, of In cation ratio. The In-rich a-IZO film (83.2 at % In) exhibits a very low resistivity of 3.9 × 10-4 Ω cm and extremely high electron mobility in excess of 50 cm2 V-1 s-1, one of the highest among the reported ALD-grown transparent conducting oxides. Moreover, it exhibits an ultrasmooth surface (∼0.2 nm in root-mean-square roughness), and can be conformally coated onto nanotrench structures (inlet size: 25 nm) with excellent step coverage of 96%.

Original languageEnglish
Pages (from-to)408-415
Number of pages8
JournalJournal of Physical Chemistry C
Volume118
Issue number1
DOIs
Publication statusPublished - 2014 Jan 9

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

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    Lee, D. J., Kwon, J. Y., Kim, J., Kim, K. J., Cho, Y. H., Cho, S. Y., Kim, S. H., Xu, J., & Kim, K. B. (2014). Ultrasmooth, high electron mobility amorphous In-Zn-O films grown by atomic layer deposition. Journal of Physical Chemistry C, 118(1), 408-415. https://doi.org/10.1021/jp409738f