Ultrathin gate oxide with a reduced transition layer grown by plasma-assisted oxidation

S. Hyun, G. H. Buh, S. H. Hong, B. Y. Koo, Y. G. Shin, U. I. Jung, J. T. Moon, M. H. Cho, H. S. Chang, D. W. Moon

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

High-resolution x-ray photoemission spectroscopy and medium energy ion scattering spectroscopy (MEIS) were used for the investigation of ultrathin SiO2 grown by plasma-assisted oxidation. The plasma oxide grown at the low temperature of 400°C was found to have thin transition layer as compared to conventional thermal oxide. The plasma oxide was used as gate dielectric for reducing the equivalent oxide thickness (EOT) by 0.5 Å without the increase of the gate leakage current. The results show that the thinner transition layer in the plasma oxide decreases the gate leakage current effectively along with the improvement the reliability of the gate oxide.

Original languageEnglish
Pages (from-to)988-990
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number6
DOIs
Publication statusPublished - 2004 Aug 9

Fingerprint

transition layers
oxidation
oxides
leakage
ion scattering
spectroscopy
photoelectric emission
high resolution
x rays

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Hyun, S., Buh, G. H., Hong, S. H., Koo, B. Y., Shin, Y. G., Jung, U. I., ... Moon, D. W. (2004). Ultrathin gate oxide with a reduced transition layer grown by plasma-assisted oxidation. Applied Physics Letters, 85(6), 988-990. https://doi.org/10.1063/1.1779353
Hyun, S. ; Buh, G. H. ; Hong, S. H. ; Koo, B. Y. ; Shin, Y. G. ; Jung, U. I. ; Moon, J. T. ; Cho, M. H. ; Chang, H. S. ; Moon, D. W. / Ultrathin gate oxide with a reduced transition layer grown by plasma-assisted oxidation. In: Applied Physics Letters. 2004 ; Vol. 85, No. 6. pp. 988-990.
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Hyun, S, Buh, GH, Hong, SH, Koo, BY, Shin, YG, Jung, UI, Moon, JT, Cho, MH, Chang, HS & Moon, DW 2004, 'Ultrathin gate oxide with a reduced transition layer grown by plasma-assisted oxidation', Applied Physics Letters, vol. 85, no. 6, pp. 988-990. https://doi.org/10.1063/1.1779353

Ultrathin gate oxide with a reduced transition layer grown by plasma-assisted oxidation. / Hyun, S.; Buh, G. H.; Hong, S. H.; Koo, B. Y.; Shin, Y. G.; Jung, U. I.; Moon, J. T.; Cho, M. H.; Chang, H. S.; Moon, D. W.

In: Applied Physics Letters, Vol. 85, No. 6, 09.08.2004, p. 988-990.

Research output: Contribution to journalArticle

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T1 - Ultrathin gate oxide with a reduced transition layer grown by plasma-assisted oxidation

AU - Hyun, S.

AU - Buh, G. H.

AU - Hong, S. H.

AU - Koo, B. Y.

AU - Shin, Y. G.

AU - Jung, U. I.

AU - Moon, J. T.

AU - Cho, M. H.

AU - Chang, H. S.

AU - Moon, D. W.

PY - 2004/8/9

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N2 - High-resolution x-ray photoemission spectroscopy and medium energy ion scattering spectroscopy (MEIS) were used for the investigation of ultrathin SiO2 grown by plasma-assisted oxidation. The plasma oxide grown at the low temperature of 400°C was found to have thin transition layer as compared to conventional thermal oxide. The plasma oxide was used as gate dielectric for reducing the equivalent oxide thickness (EOT) by 0.5 Å without the increase of the gate leakage current. The results show that the thinner transition layer in the plasma oxide decreases the gate leakage current effectively along with the improvement the reliability of the gate oxide.

AB - High-resolution x-ray photoemission spectroscopy and medium energy ion scattering spectroscopy (MEIS) were used for the investigation of ultrathin SiO2 grown by plasma-assisted oxidation. The plasma oxide grown at the low temperature of 400°C was found to have thin transition layer as compared to conventional thermal oxide. The plasma oxide was used as gate dielectric for reducing the equivalent oxide thickness (EOT) by 0.5 Å without the increase of the gate leakage current. The results show that the thinner transition layer in the plasma oxide decreases the gate leakage current effectively along with the improvement the reliability of the gate oxide.

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