Ultrathin gate oxide with a reduced transition layer grown by plasma-assisted oxidation

S. Hyun, G. H. Buh, S. H. Hong, B. Y. Koo, Y. G. Shin, U. I. Jung, J. T. Moon, M. H. Cho, H. S. Chang, D. W. Moon

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Abstract

High-resolution x-ray photoemission spectroscopy and medium energy ion scattering spectroscopy (MEIS) were used for the investigation of ultrathin SiO2 grown by plasma-assisted oxidation. The plasma oxide grown at the low temperature of 400°C was found to have thin transition layer as compared to conventional thermal oxide. The plasma oxide was used as gate dielectric for reducing the equivalent oxide thickness (EOT) by 0.5 Å without the increase of the gate leakage current. The results show that the thinner transition layer in the plasma oxide decreases the gate leakage current effectively along with the improvement the reliability of the gate oxide.

Original languageEnglish
Pages (from-to)988-990
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number6
DOIs
Publication statusPublished - 2004 Aug 9

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Hyun, S., Buh, G. H., Hong, S. H., Koo, B. Y., Shin, Y. G., Jung, U. I., Moon, J. T., Cho, M. H., Chang, H. S., & Moon, D. W. (2004). Ultrathin gate oxide with a reduced transition layer grown by plasma-assisted oxidation. Applied Physics Letters, 85(6), 988-990. https://doi.org/10.1063/1.1779353