Ultraviolet detecting properties of ZnO-based thin film transistors

H. S. Bae, Seongil Im

Research output: Contribution to journalArticle

69 Citations (Scopus)

Abstract

ZnO-based thin film transistors (TFTs) have been fabricated on a SiO 2/p-Si substrate by if magnetron sputtering at room temperature and they exhibited a saturation current level of a few μA under a gate bias of 40V, electron mobility of less than 0.05 cm2/V s, and on/off current ratio of ∼105 in the dark. Illuminated by ultraviolet (UV, λ=340 nm) light with an optical power density of 1.26 mW/cm2, our TFT displayed a high photocurrent gain of more than 50 uA at the same gate bias of 40 V and it also showed that the photocurrent decreases with lowering the UV intensity. In a channel depletion state with a gate bias of -40 V, the photo-detecting sensitivity becomes much higher than in the accumulation state with the gate bias of 40 V.

Original languageEnglish
Pages (from-to)75-79
Number of pages5
JournalThin Solid Films
Volume469-470
Issue numberSPEC. ISS.
DOIs
Publication statusPublished - 2004 Dec 22

Fingerprint

Thin film transistors
Photocurrents
transistors
Photosensitivity
Electron mobility
thin films
Magnetron sputtering
photocurrents
Substrates
electron mobility
radiant flux density
magnetron sputtering
depletion
saturation
Temperature
sensitivity
room temperature

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Bae, H. S. ; Im, Seongil. / Ultraviolet detecting properties of ZnO-based thin film transistors. In: Thin Solid Films. 2004 ; Vol. 469-470, No. SPEC. ISS. pp. 75-79.
@article{9b41df525809441f940fc6b00ba0910c,
title = "Ultraviolet detecting properties of ZnO-based thin film transistors",
abstract = "ZnO-based thin film transistors (TFTs) have been fabricated on a SiO 2/p-Si substrate by if magnetron sputtering at room temperature and they exhibited a saturation current level of a few μA under a gate bias of 40V, electron mobility of less than 0.05 cm2/V s, and on/off current ratio of ∼105 in the dark. Illuminated by ultraviolet (UV, λ=340 nm) light with an optical power density of 1.26 mW/cm2, our TFT displayed a high photocurrent gain of more than 50 uA at the same gate bias of 40 V and it also showed that the photocurrent decreases with lowering the UV intensity. In a channel depletion state with a gate bias of -40 V, the photo-detecting sensitivity becomes much higher than in the accumulation state with the gate bias of 40 V.",
author = "Bae, {H. S.} and Seongil Im",
year = "2004",
month = "12",
day = "22",
doi = "10.1016/j.tsf.2004.06.196",
language = "English",
volume = "469-470",
pages = "75--79",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "SPEC. ISS.",

}

Ultraviolet detecting properties of ZnO-based thin film transistors. / Bae, H. S.; Im, Seongil.

In: Thin Solid Films, Vol. 469-470, No. SPEC. ISS., 22.12.2004, p. 75-79.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Ultraviolet detecting properties of ZnO-based thin film transistors

AU - Bae, H. S.

AU - Im, Seongil

PY - 2004/12/22

Y1 - 2004/12/22

N2 - ZnO-based thin film transistors (TFTs) have been fabricated on a SiO 2/p-Si substrate by if magnetron sputtering at room temperature and they exhibited a saturation current level of a few μA under a gate bias of 40V, electron mobility of less than 0.05 cm2/V s, and on/off current ratio of ∼105 in the dark. Illuminated by ultraviolet (UV, λ=340 nm) light with an optical power density of 1.26 mW/cm2, our TFT displayed a high photocurrent gain of more than 50 uA at the same gate bias of 40 V and it also showed that the photocurrent decreases with lowering the UV intensity. In a channel depletion state with a gate bias of -40 V, the photo-detecting sensitivity becomes much higher than in the accumulation state with the gate bias of 40 V.

AB - ZnO-based thin film transistors (TFTs) have been fabricated on a SiO 2/p-Si substrate by if magnetron sputtering at room temperature and they exhibited a saturation current level of a few μA under a gate bias of 40V, electron mobility of less than 0.05 cm2/V s, and on/off current ratio of ∼105 in the dark. Illuminated by ultraviolet (UV, λ=340 nm) light with an optical power density of 1.26 mW/cm2, our TFT displayed a high photocurrent gain of more than 50 uA at the same gate bias of 40 V and it also showed that the photocurrent decreases with lowering the UV intensity. In a channel depletion state with a gate bias of -40 V, the photo-detecting sensitivity becomes much higher than in the accumulation state with the gate bias of 40 V.

UR - http://www.scopus.com/inward/record.url?scp=10044220777&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=10044220777&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2004.06.196

DO - 10.1016/j.tsf.2004.06.196

M3 - Article

VL - 469-470

SP - 75

EP - 79

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - SPEC. ISS.

ER -