Ultraviolet-enhanced device properties in pentacene-based thin-film transistors

Jeong M. Choi, D. K. Hwang, Jung Min Hwang, Jae Hoon Kim, Seongil Im

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25 Citations (Scopus)

Abstract

The authors report on the ultraviolet (UV)-enhanced device properties in pentacene-based thin-film transistors (TFTs). Pentacene TFTs showed a degraded mobility and lowered saturation current after illumination by a high energy UV with 254 nm wavelength. However, under 364 nm UV these devices surprisingly displayed enhanced saturation current and also showed threshold voltage shift toward lower values, maintaining their mobilities. The saturation current increase and threshold voltage shift were further related to the negative fixed charges excessively formed at the pentacene/dielectric interface by the low energy UV. The authors thus conclude that a low energy UV could rather enhance the pentacene TFT performances and also control the threshold voltage of the device.

Original languageEnglish
Article number113515
JournalApplied Physics Letters
Volume90
Issue number11
DOIs
Publication statusPublished - 2007

Bibliographical note

Funding Information:
This research was performed with the financial support from KOSEF (Program No. M1-0214-00-0228) and LG Philips LCD (project year 2005). The authors also acknowledge the support from Seoul Science Fellowship and Brain Korea 21 Project. One of the authors (J.H.K.) acknowledges the financial support of eSSC at Postech funded by KOSEF/MOST.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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