Ultraviolet-enhanced photodiode employing n-ZnO/p-Si structure

I. S. Jeong; Jae H. Kim; Seongil Im

doi:10.1063/1.1616663

Ultraviolet-enhanced photodiode employing n-ZnO/p-Si structure

I. S. Jeong, Jae H. Kim, Seongil Im

Department of Physics

Research output: Contribution to journal › Article › peer-review

378 Citations (Scopus)

Abstract

A study was performed on the photoelectric properties of n-ZnO/p-Si photodiodes. It was found the photodiodes exposed to UV photons show a linear increase in photocurrent with reverse bias. The results show that n-ZnO/p-Si diode could be a UV- enhanced photodiode that detects UV and visible photons by employing two related photoelectric mechanisms in parallel.

Original language	English
Pages (from-to)	2946-2948
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	14
DOIs	https://doi.org/10.1063/1.1616663
Publication status	Published - 2003 Oct 6

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1616663

Cite this

@article{641f83f65c4f42cc92e207b02517b30c,

title = "Ultraviolet-enhanced photodiode employing n-ZnO/p-Si structure",

abstract = "A study was performed on the photoelectric properties of n-ZnO/p-Si photodiodes. It was found the photodiodes exposed to UV photons show a linear increase in photocurrent with reverse bias. The results show that n-ZnO/p-Si diode could be a UV- enhanced photodiode that detects UV and visible photons by employing two related photoelectric mechanisms in parallel.",

author = "Jeong, {I. S.} and Kim, {Jae H.} and Seongil Im",

year = "2003",

month = oct,

day = "6",

doi = "10.1063/1.1616663",

language = "English",

volume = "83",

pages = "2946--2948",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "14",

}

TY - JOUR

T1 - Ultraviolet-enhanced photodiode employing n-ZnO/p-Si structure

AU - Jeong, I. S.

AU - Kim, Jae H.

AU - Im, Seongil

PY - 2003/10/6

Y1 - 2003/10/6

N2 - A study was performed on the photoelectric properties of n-ZnO/p-Si photodiodes. It was found the photodiodes exposed to UV photons show a linear increase in photocurrent with reverse bias. The results show that n-ZnO/p-Si diode could be a UV- enhanced photodiode that detects UV and visible photons by employing two related photoelectric mechanisms in parallel.

AB - A study was performed on the photoelectric properties of n-ZnO/p-Si photodiodes. It was found the photodiodes exposed to UV photons show a linear increase in photocurrent with reverse bias. The results show that n-ZnO/p-Si diode could be a UV- enhanced photodiode that detects UV and visible photons by employing two related photoelectric mechanisms in parallel.

UR - http://www.scopus.com/inward/record.url?scp=0142229525&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0142229525&partnerID=8YFLogxK

U2 - 10.1063/1.1616663

DO - 10.1063/1.1616663

M3 - Article

AN - SCOPUS:0142229525

SN - 0003-6951

VL - 83

SP - 2946

EP - 2948

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Ultraviolet-enhanced photodiode employing n-ZnO/p-Si structure

Abstract

All Science Journal Classification (ASJC) codes

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