Ultraviolet-enhanced photodiode employing n-ZnO/p-Si structure

I. S. Jeong, Jae Hoon Kim, Seongil Im

Research output: Contribution to journalArticle

335 Citations (Scopus)

Abstract

A study was performed on the photoelectric properties of n-ZnO/p-Si photodiodes. It was found the photodiodes exposed to UV photons show a linear increase in photocurrent with reverse bias. The results show that n-ZnO/p-Si diode could be a UV- enhanced photodiode that detects UV and visible photons by employing two related photoelectric mechanisms in parallel.

Original languageEnglish
Pages (from-to)2946-2948
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number14
DOIs
Publication statusPublished - 2003 Oct 6

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photodiodes
photons
photocurrents
diodes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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Ultraviolet-enhanced photodiode employing n-ZnO/p-Si structure. / Jeong, I. S.; Kim, Jae Hoon; Im, Seongil.

In: Applied Physics Letters, Vol. 83, No. 14, 06.10.2003, p. 2946-2948.

Research output: Contribution to journalArticle

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