A study was performed on the photoelectric properties of n-ZnO/p-Si photodiodes. It was found the photodiodes exposed to UV photons show a linear increase in photocurrent with reverse bias. The results show that n-ZnO/p-Si diode could be a UV- enhanced photodiode that detects UV and visible photons by employing two related photoelectric mechanisms in parallel.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2003 Oct 6|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)