Ultraviolet enhanced Si-photodetector using p-NiO films

Jeong M. Choi, Seongil Im

Research output: Contribution to journalConference article

60 Citations (Scopus)

Abstract

We report on the properties of a heterojunction photodiode composed of p-type NiO and n-type Si. This photodetector was fabricated by evaporating NiO powders on Si (1 0 0) substrate. Our deposited p-NiO film was found to have a hole concentration of ∼10 19 cm -3 according to Hall measurements. Current-voltage (I-V) characteristics of our photodiode were measured in the dark and under ultra-violet (UV)-vis light illuminations (290 nm, 325 nm, 460 nm, 540 nm, and 633 nm) at room temperature (RT). The photo-responsivity of our photodiode appeared almost saturated even at 0 V, showing good photo-voltaic properties. The responsivity was as high as ∼0.36 A/W at 0 V and ∼0.40 A/W at 30 V for visible light (633 nm) while it was 0.15 A/W at 0 V and 0.17 A/W at 30 V for UV (290 nm).

Original languageEnglish
Pages (from-to)435-438
Number of pages4
JournalApplied Surface Science
Volume244
Issue number1-4
DOIs
Publication statusPublished - 2005 May 15
Event12th International Conference on Solid Films and Surfaces - Hammatsu, Japan
Duration: 2004 Jun 212004 Jun 25

Fingerprint

Photodetectors
Photodiodes
Hole concentration
Powders
Heterojunctions
Lighting
Electric potential
Substrates
Temperature

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

Choi, Jeong M. ; Im, Seongil. / Ultraviolet enhanced Si-photodetector using p-NiO films. In: Applied Surface Science. 2005 ; Vol. 244, No. 1-4. pp. 435-438.
@article{02a850196d144a559159713ecad713ae,
title = "Ultraviolet enhanced Si-photodetector using p-NiO films",
abstract = "We report on the properties of a heterojunction photodiode composed of p-type NiO and n-type Si. This photodetector was fabricated by evaporating NiO powders on Si (1 0 0) substrate. Our deposited p-NiO film was found to have a hole concentration of ∼10 19 cm -3 according to Hall measurements. Current-voltage (I-V) characteristics of our photodiode were measured in the dark and under ultra-violet (UV)-vis light illuminations (290 nm, 325 nm, 460 nm, 540 nm, and 633 nm) at room temperature (RT). The photo-responsivity of our photodiode appeared almost saturated even at 0 V, showing good photo-voltaic properties. The responsivity was as high as ∼0.36 A/W at 0 V and ∼0.40 A/W at 30 V for visible light (633 nm) while it was 0.15 A/W at 0 V and 0.17 A/W at 30 V for UV (290 nm).",
author = "Choi, {Jeong M.} and Seongil Im",
year = "2005",
month = "5",
day = "15",
doi = "10.1016/j.apsusc.2004.09.152",
language = "English",
volume = "244",
pages = "435--438",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",
number = "1-4",

}

Ultraviolet enhanced Si-photodetector using p-NiO films. / Choi, Jeong M.; Im, Seongil.

In: Applied Surface Science, Vol. 244, No. 1-4, 15.05.2005, p. 435-438.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Ultraviolet enhanced Si-photodetector using p-NiO films

AU - Choi, Jeong M.

AU - Im, Seongil

PY - 2005/5/15

Y1 - 2005/5/15

N2 - We report on the properties of a heterojunction photodiode composed of p-type NiO and n-type Si. This photodetector was fabricated by evaporating NiO powders on Si (1 0 0) substrate. Our deposited p-NiO film was found to have a hole concentration of ∼10 19 cm -3 according to Hall measurements. Current-voltage (I-V) characteristics of our photodiode were measured in the dark and under ultra-violet (UV)-vis light illuminations (290 nm, 325 nm, 460 nm, 540 nm, and 633 nm) at room temperature (RT). The photo-responsivity of our photodiode appeared almost saturated even at 0 V, showing good photo-voltaic properties. The responsivity was as high as ∼0.36 A/W at 0 V and ∼0.40 A/W at 30 V for visible light (633 nm) while it was 0.15 A/W at 0 V and 0.17 A/W at 30 V for UV (290 nm).

AB - We report on the properties of a heterojunction photodiode composed of p-type NiO and n-type Si. This photodetector was fabricated by evaporating NiO powders on Si (1 0 0) substrate. Our deposited p-NiO film was found to have a hole concentration of ∼10 19 cm -3 according to Hall measurements. Current-voltage (I-V) characteristics of our photodiode were measured in the dark and under ultra-violet (UV)-vis light illuminations (290 nm, 325 nm, 460 nm, 540 nm, and 633 nm) at room temperature (RT). The photo-responsivity of our photodiode appeared almost saturated even at 0 V, showing good photo-voltaic properties. The responsivity was as high as ∼0.36 A/W at 0 V and ∼0.40 A/W at 30 V for visible light (633 nm) while it was 0.15 A/W at 0 V and 0.17 A/W at 30 V for UV (290 nm).

UR - http://www.scopus.com/inward/record.url?scp=15844402756&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=15844402756&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2004.09.152

DO - 10.1016/j.apsusc.2004.09.152

M3 - Conference article

AN - SCOPUS:15844402756

VL - 244

SP - 435

EP - 438

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 1-4

ER -