We report on the properties of a heterojunction photodiode composed of p-type NiO and n-type Si. This photodetector was fabricated by evaporating NiO powders on Si (1 0 0) substrate. Our deposited p-NiO film was found to have a hole concentration of ∼10 19 cm -3 according to Hall measurements. Current-voltage (I-V) characteristics of our photodiode were measured in the dark and under ultra-violet (UV)-vis light illuminations (290 nm, 325 nm, 460 nm, 540 nm, and 633 nm) at room temperature (RT). The photo-responsivity of our photodiode appeared almost saturated even at 0 V, showing good photo-voltaic properties. The responsivity was as high as ∼0.36 A/W at 0 V and ∼0.40 A/W at 30 V for visible light (633 nm) while it was 0.15 A/W at 0 V and 0.17 A/W at 30 V for UV (290 nm).
|Number of pages||4|
|Journal||Applied Surface Science|
|Publication status||Published - 2005 May 15|
|Event||12th International Conference on Solid Films and Surfaces - Hammatsu, Japan|
Duration: 2004 Jun 21 → 2004 Jun 25
Bibliographical noteFunding Information:
The authors are very appreciative of the financial support from KISTEP (Program no. M1-0214-00-0228), and YTCC (Yonsei Techno Cooperation Center, project year 2004). They also acknowledge the support from Brain Korea 21 Program.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films