Ultraviolet photodetector based on single GaN nanorod p-n junctions

M. S. Son; S. I. Im; Y. S. Park; C. M. Park; T. W. Kang; K. H. Yoo

doi:10.1016/j.msec.2005.09.089

Ultraviolet photodetector based on single GaN nanorod p-n junctions

M. S. Son, S. I. Im, Y. S. Park, C. M. Park, T. W. Kang, K. H. Yoo

Department of Physics

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

The fabrication and characterization of ultraviolet photodetectors based on single GaN nanorod p-n junctions are reported. Single nanorod p-n junctions within individual GaN nanorods were grown by using the plasma-assisted molecular beam epitaxy. In order to form the p-n junction at the middle of the nanorod, the dopant was changed from Si (n-type) to Mg (p-type) during the growth procedure. These single GaN nanorod p-n junction diodes have exhibited a rectifying behavior and a photocurrent effect under ultraviolet illumination.

Original language	English
Pages (from-to)	886-888
Number of pages	3
Journal	Materials Science and Engineering C
Volume	26
Issue number	5-7
DOIs	https://doi.org/10.1016/j.msec.2005.09.089
Publication status	Published - 2006 Jul

Bibliographical note

Funding Information:
This work was supported by KOSEF through the Nanomedical Research Center at Yonsei University and the QSRC at Dongguk University.

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.msec.2005.09.089

Cite this

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title = "Ultraviolet photodetector based on single GaN nanorod p-n junctions",

abstract = "The fabrication and characterization of ultraviolet photodetectors based on single GaN nanorod p-n junctions are reported. Single nanorod p-n junctions within individual GaN nanorods were grown by using the plasma-assisted molecular beam epitaxy. In order to form the p-n junction at the middle of the nanorod, the dopant was changed from Si (n-type) to Mg (p-type) during the growth procedure. These single GaN nanorod p-n junction diodes have exhibited a rectifying behavior and a photocurrent effect under ultraviolet illumination.",

author = "Son, {M. S.} and Im, {S. I.} and Park, {Y. S.} and Park, {C. M.} and Kang, {T. W.} and Yoo, {K. H.}",

note = "Funding Information: This work was supported by KOSEF through the Nanomedical Research Center at Yonsei University and the QSRC at Dongguk University.",

year = "2006",

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doi = "10.1016/j.msec.2005.09.089",

language = "English",

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T1 - Ultraviolet photodetector based on single GaN nanorod p-n junctions

AU - Son, M. S.

AU - Im, S. I.

AU - Park, Y. S.

AU - Park, C. M.

AU - Kang, T. W.

AU - Yoo, K. H.

N1 - Funding Information: This work was supported by KOSEF through the Nanomedical Research Center at Yonsei University and the QSRC at Dongguk University.

PY - 2006/7

Y1 - 2006/7

N2 - The fabrication and characterization of ultraviolet photodetectors based on single GaN nanorod p-n junctions are reported. Single nanorod p-n junctions within individual GaN nanorods were grown by using the plasma-assisted molecular beam epitaxy. In order to form the p-n junction at the middle of the nanorod, the dopant was changed from Si (n-type) to Mg (p-type) during the growth procedure. These single GaN nanorod p-n junction diodes have exhibited a rectifying behavior and a photocurrent effect under ultraviolet illumination.

AB - The fabrication and characterization of ultraviolet photodetectors based on single GaN nanorod p-n junctions are reported. Single nanorod p-n junctions within individual GaN nanorods were grown by using the plasma-assisted molecular beam epitaxy. In order to form the p-n junction at the middle of the nanorod, the dopant was changed from Si (n-type) to Mg (p-type) during the growth procedure. These single GaN nanorod p-n junction diodes have exhibited a rectifying behavior and a photocurrent effect under ultraviolet illumination.

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Ultraviolet photodetector based on single GaN nanorod p-n junctions

Abstract

Bibliographical note

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