Abstract
The fabrication and characterization of ultraviolet photodetectors based on single GaN nanorod p-n junctions are reported. Single nanorod p-n junctions within individual GaN nanorods were grown by using the plasma-assisted molecular beam epitaxy. In order to form the p-n junction at the middle of the nanorod, the dopant was changed from Si (n-type) to Mg (p-type) during the growth procedure. These single GaN nanorod p-n junction diodes have exhibited a rectifying behavior and a photocurrent effect under ultraviolet illumination.
| Original language | English |
|---|---|
| Pages (from-to) | 886-888 |
| Number of pages | 3 |
| Journal | Materials Science and Engineering C |
| Volume | 26 |
| Issue number | 5-7 |
| DOIs | |
| Publication status | Published - 2006 Jul 1 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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Ultraviolet photodetector based on single GaN nanorod p-n junctions. / Son, M. S.; Im, Seongil; Park, Y. S.; Park, C. M.; Kang, T. W.; Yoo, Kyung-hwa.
In: Materials Science and Engineering C, Vol. 26, No. 5-7, 01.07.2006, p. 886-888.Research output: Contribution to journal › Article
TY - JOUR
T1 - Ultraviolet photodetector based on single GaN nanorod p-n junctions
AU - Son, M. S.
AU - Im, Seongil
AU - Park, Y. S.
AU - Park, C. M.
AU - Kang, T. W.
AU - Yoo, Kyung-hwa
PY - 2006/7/1
Y1 - 2006/7/1
N2 - The fabrication and characterization of ultraviolet photodetectors based on single GaN nanorod p-n junctions are reported. Single nanorod p-n junctions within individual GaN nanorods were grown by using the plasma-assisted molecular beam epitaxy. In order to form the p-n junction at the middle of the nanorod, the dopant was changed from Si (n-type) to Mg (p-type) during the growth procedure. These single GaN nanorod p-n junction diodes have exhibited a rectifying behavior and a photocurrent effect under ultraviolet illumination.
AB - The fabrication and characterization of ultraviolet photodetectors based on single GaN nanorod p-n junctions are reported. Single nanorod p-n junctions within individual GaN nanorods were grown by using the plasma-assisted molecular beam epitaxy. In order to form the p-n junction at the middle of the nanorod, the dopant was changed from Si (n-type) to Mg (p-type) during the growth procedure. These single GaN nanorod p-n junction diodes have exhibited a rectifying behavior and a photocurrent effect under ultraviolet illumination.
UR - http://www.scopus.com/inward/record.url?scp=33646834747&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33646834747&partnerID=8YFLogxK
U2 - 10.1016/j.msec.2005.09.089
DO - 10.1016/j.msec.2005.09.089
M3 - Article
AN - SCOPUS:33646834747
VL - 26
SP - 886
EP - 888
JO - Materials Science and Engineering C
JF - Materials Science and Engineering C
SN - 0928-4931
IS - 5-7
ER -