Abstract
The fabrication and characterization of ultraviolet photodetectors based on single GaN nanorod p-n junctions are reported. Single nanorod p-n junctions within individual GaN nanorods were grown by using the plasma-assisted molecular beam epitaxy. In order to form the p-n junction at the middle of the nanorod, the dopant was changed from Si (n-type) to Mg (p-type) during the growth procedure. These single GaN nanorod p-n junction diodes have exhibited a rectifying behavior and a photocurrent effect under ultraviolet illumination.
Original language | English |
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Pages (from-to) | 886-888 |
Number of pages | 3 |
Journal | Materials Science and Engineering C |
Volume | 26 |
Issue number | 5-7 |
DOIs | |
Publication status | Published - 2006 Jul |
Bibliographical note
Funding Information:This work was supported by KOSEF through the Nanomedical Research Center at Yonsei University and the QSRC at Dongguk University.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering