Ultraviolet photodetector based on single GaN nanorod p-n junctions

M. S. Son, Seongil Im, Y. S. Park, C. M. Park, T. W. Kang, Kyung-hwa Yoo

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

The fabrication and characterization of ultraviolet photodetectors based on single GaN nanorod p-n junctions are reported. Single nanorod p-n junctions within individual GaN nanorods were grown by using the plasma-assisted molecular beam epitaxy. In order to form the p-n junction at the middle of the nanorod, the dopant was changed from Si (n-type) to Mg (p-type) during the growth procedure. These single GaN nanorod p-n junction diodes have exhibited a rectifying behavior and a photocurrent effect under ultraviolet illumination.

Original languageEnglish
Pages (from-to)886-888
Number of pages3
JournalMaterials Science and Engineering C
Volume26
Issue number5-7
DOIs
Publication statusPublished - 2006 Jul 1

Fingerprint

Photodetectors
p-n junctions
Nanorods
nanorods
photometers
junction diodes
Photocurrents
Molecular beam epitaxy
photocurrents
Diodes
molecular beam epitaxy
Lighting
illumination
Doping (additives)
Plasmas
Fabrication
fabrication

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Son, M. S. ; Im, Seongil ; Park, Y. S. ; Park, C. M. ; Kang, T. W. ; Yoo, Kyung-hwa. / Ultraviolet photodetector based on single GaN nanorod p-n junctions. In: Materials Science and Engineering C. 2006 ; Vol. 26, No. 5-7. pp. 886-888.
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Ultraviolet photodetector based on single GaN nanorod p-n junctions. / Son, M. S.; Im, Seongil; Park, Y. S.; Park, C. M.; Kang, T. W.; Yoo, Kyung-hwa.

In: Materials Science and Engineering C, Vol. 26, No. 5-7, 01.07.2006, p. 886-888.

Research output: Contribution to journalArticle

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