Abstract
The fabrication and characterization of ultraviolet photodetectors based on single GaN nanorod p-n junctions are reported. Single nanorod p-n junctions within individual GaN nanorods were grown by using the plasma-assisted molecular beam epitaxy. In order to form the p-n junction at the middle of the nanorod, the dopant was changed from Si (n-type) to Mg (p-type) during the growth procedure. These single GaN nanorod p-n junction diodes have exhibited a rectifying behavior and a photocurrent effect under ultraviolet illumination.
| Original language | English |
|---|---|
| Pages (from-to) | 886-888 |
| Number of pages | 3 |
| Journal | Materials Science and Engineering C |
| Volume | 26 |
| Issue number | 5-7 |
| DOIs | |
| Publication status | Published - 2006 Jul 1 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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Son, M. S., Im, S. I., Park, Y. S., Park, C. M., Kang, T. W., & Yoo, K. H. (2006). Ultraviolet photodetector based on single GaN nanorod p-n junctions. Materials Science and Engineering C, 26(5-7), 886-888. https://doi.org/10.1016/j.msec.2005.09.089