Unconventional transport through graphene on SrTiO 3: A plausible effect of SrTiO3 phase-transitions

Surajit Saha, Orhan Kahya, Manu Jaiswal, Amar Srivastava, Anil Annadi, Jayakumar Balakrishnan, Alexandre Pachoud, Chee Tat Toh, Byung Hee Hong, Jong Hyun Ahn, T. Venkatesan, Barbaros Özyilmaz

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

High-k dielectric oxides are supposedly ideal gate-materials for ultra-high doping in graphene and other 2D-crystals. Here, we report a temperature-dependent electronic transport study on chemical vapor deposited-graphene gated with SrTiO3 (STO) thin film substrate. At carrier densities away from charge neutrality point the temperature-dependent resistivity of our graphene samples on both STO and SiO2/Si substrates show metallic behavior with contributions from Coulomb scattering and flexural phonons attributable to the presence of characteristic quasi-periodic nano-ripple arrays. Significantly, for graphene samples on STO substrates we observe an anomalous 'slope-break' in the temperature-dependent resistivity for T550 to 100 K accompanied by a decrease in mobility above 30 K. Furthermore, we observe an unusual decrease in the gate-induced doping-rate at low temperatures, despite an increase in dielectric constant of the substrate. We believe that a complex mechanism is at play as a consequence of the structural phase transition of the underlying substrate showing an anomalous transport behavior in graphene on STO. The anomalies are discussed in the context of Coulomb as well as phonon scattering.

Original languageEnglish
Article number6173
JournalScientific reports
Volume4
DOIs
Publication statusPublished - 2014 Aug 22

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graphene
electrical resistivity
ripples
scattering
temperature
phonons
vapors
permittivity
anomalies
slopes
oxides
thin films
electronics
crystals

All Science Journal Classification (ASJC) codes

  • General

Cite this

Saha, S., Kahya, O., Jaiswal, M., Srivastava, A., Annadi, A., Balakrishnan, J., ... Özyilmaz, B. (2014). Unconventional transport through graphene on SrTiO 3: A plausible effect of SrTiO3 phase-transitions. Scientific reports, 4, [6173]. https://doi.org/10.1038/srep06173
Saha, Surajit ; Kahya, Orhan ; Jaiswal, Manu ; Srivastava, Amar ; Annadi, Anil ; Balakrishnan, Jayakumar ; Pachoud, Alexandre ; Toh, Chee Tat ; Hong, Byung Hee ; Ahn, Jong Hyun ; Venkatesan, T. ; Özyilmaz, Barbaros. / Unconventional transport through graphene on SrTiO 3 : A plausible effect of SrTiO3 phase-transitions. In: Scientific reports. 2014 ; Vol. 4.
@article{fec7d4557339478b857820d3b865c162,
title = "Unconventional transport through graphene on SrTiO 3: A plausible effect of SrTiO3 phase-transitions",
abstract = "High-k dielectric oxides are supposedly ideal gate-materials for ultra-high doping in graphene and other 2D-crystals. Here, we report a temperature-dependent electronic transport study on chemical vapor deposited-graphene gated with SrTiO3 (STO) thin film substrate. At carrier densities away from charge neutrality point the temperature-dependent resistivity of our graphene samples on both STO and SiO2/Si substrates show metallic behavior with contributions from Coulomb scattering and flexural phonons attributable to the presence of characteristic quasi-periodic nano-ripple arrays. Significantly, for graphene samples on STO substrates we observe an anomalous 'slope-break' in the temperature-dependent resistivity for T550 to 100 K accompanied by a decrease in mobility above 30 K. Furthermore, we observe an unusual decrease in the gate-induced doping-rate at low temperatures, despite an increase in dielectric constant of the substrate. We believe that a complex mechanism is at play as a consequence of the structural phase transition of the underlying substrate showing an anomalous transport behavior in graphene on STO. The anomalies are discussed in the context of Coulomb as well as phonon scattering.",
author = "Surajit Saha and Orhan Kahya and Manu Jaiswal and Amar Srivastava and Anil Annadi and Jayakumar Balakrishnan and Alexandre Pachoud and Toh, {Chee Tat} and Hong, {Byung Hee} and Ahn, {Jong Hyun} and T. Venkatesan and Barbaros {\"O}zyilmaz",
year = "2014",
month = "8",
day = "22",
doi = "10.1038/srep06173",
language = "English",
volume = "4",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",

}

Saha, S, Kahya, O, Jaiswal, M, Srivastava, A, Annadi, A, Balakrishnan, J, Pachoud, A, Toh, CT, Hong, BH, Ahn, JH, Venkatesan, T & Özyilmaz, B 2014, 'Unconventional transport through graphene on SrTiO 3: A plausible effect of SrTiO3 phase-transitions', Scientific reports, vol. 4, 6173. https://doi.org/10.1038/srep06173

Unconventional transport through graphene on SrTiO 3 : A plausible effect of SrTiO3 phase-transitions. / Saha, Surajit; Kahya, Orhan; Jaiswal, Manu; Srivastava, Amar; Annadi, Anil; Balakrishnan, Jayakumar; Pachoud, Alexandre; Toh, Chee Tat; Hong, Byung Hee; Ahn, Jong Hyun; Venkatesan, T.; Özyilmaz, Barbaros.

In: Scientific reports, Vol. 4, 6173, 22.08.2014.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Unconventional transport through graphene on SrTiO 3

T2 - A plausible effect of SrTiO3 phase-transitions

AU - Saha, Surajit

AU - Kahya, Orhan

AU - Jaiswal, Manu

AU - Srivastava, Amar

AU - Annadi, Anil

AU - Balakrishnan, Jayakumar

AU - Pachoud, Alexandre

AU - Toh, Chee Tat

AU - Hong, Byung Hee

AU - Ahn, Jong Hyun

AU - Venkatesan, T.

AU - Özyilmaz, Barbaros

PY - 2014/8/22

Y1 - 2014/8/22

N2 - High-k dielectric oxides are supposedly ideal gate-materials for ultra-high doping in graphene and other 2D-crystals. Here, we report a temperature-dependent electronic transport study on chemical vapor deposited-graphene gated with SrTiO3 (STO) thin film substrate. At carrier densities away from charge neutrality point the temperature-dependent resistivity of our graphene samples on both STO and SiO2/Si substrates show metallic behavior with contributions from Coulomb scattering and flexural phonons attributable to the presence of characteristic quasi-periodic nano-ripple arrays. Significantly, for graphene samples on STO substrates we observe an anomalous 'slope-break' in the temperature-dependent resistivity for T550 to 100 K accompanied by a decrease in mobility above 30 K. Furthermore, we observe an unusual decrease in the gate-induced doping-rate at low temperatures, despite an increase in dielectric constant of the substrate. We believe that a complex mechanism is at play as a consequence of the structural phase transition of the underlying substrate showing an anomalous transport behavior in graphene on STO. The anomalies are discussed in the context of Coulomb as well as phonon scattering.

AB - High-k dielectric oxides are supposedly ideal gate-materials for ultra-high doping in graphene and other 2D-crystals. Here, we report a temperature-dependent electronic transport study on chemical vapor deposited-graphene gated with SrTiO3 (STO) thin film substrate. At carrier densities away from charge neutrality point the temperature-dependent resistivity of our graphene samples on both STO and SiO2/Si substrates show metallic behavior with contributions from Coulomb scattering and flexural phonons attributable to the presence of characteristic quasi-periodic nano-ripple arrays. Significantly, for graphene samples on STO substrates we observe an anomalous 'slope-break' in the temperature-dependent resistivity for T550 to 100 K accompanied by a decrease in mobility above 30 K. Furthermore, we observe an unusual decrease in the gate-induced doping-rate at low temperatures, despite an increase in dielectric constant of the substrate. We believe that a complex mechanism is at play as a consequence of the structural phase transition of the underlying substrate showing an anomalous transport behavior in graphene on STO. The anomalies are discussed in the context of Coulomb as well as phonon scattering.

UR - http://www.scopus.com/inward/record.url?scp=84906699120&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84906699120&partnerID=8YFLogxK

U2 - 10.1038/srep06173

DO - 10.1038/srep06173

M3 - Article

AN - SCOPUS:84906699120

VL - 4

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

M1 - 6173

ER -