Understanding structure-property relationship of resistive switching oxide thin films using a conical filament model

Kyung Min Kim; Min Hwan Lee; Gun Hwan Kim; Seul Ji Song; Jun Yeong Seok; Jung Ho Yoon; Cheol Seong Hwang

doi:10.1063/1.3505354

Understanding structure-property relationship of resistive switching oxide thin films using a conical filament model

Kyung Min Kim, Min Hwan Lee, Gun Hwan Kim, Seul Ji Song, Jun Yeong Seok, Jung Ho Yoon, Cheol Seong Hwang

School of System & Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The relations between the reset current I_R, room temperature filament resistance R₀, and third harmonic coefficient B₀ were evaluated by a conical filament model. It was found that I_R ∼1/ R₀ when the filament is either very weak, where the filament is more conical, or quite strong, where the filament is more cylindrical. The physical implication of the B₀ was also understood from the materials properties. The coherence between the model expectations for the bulkier conical filaments, typically found in TiO₂, and the more random-network like filaments, typically found in NiO, suggests a common switching mechanism works in both materials.

Original language	English
Article number	162912
Journal	Applied Physics Letters
Volume	97
Issue number	16
DOIs	https://doi.org/10.1063/1.3505354
Publication status	Published - 2010 Oct 18

Bibliographical note

Funding Information:
This study was supported by the National Research Program for the Nano Semiconductor Apparatus Development sponsored by the Korea Ministry of Knowledge and Economy, the Convergent Research Center program (Grant No. 2010K000977), and World Class University program through the National Research Foundation of Korea funded by the Ministry of Education, Science, and Technology (Grant No. R31-2008-000-10075-0).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3505354

Cite this

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title = "Understanding structure-property relationship of resistive switching oxide thin films using a conical filament model",

abstract = "The relations between the reset current IR, room temperature filament resistance R0, and third harmonic coefficient B0 were evaluated by a conical filament model. It was found that IR ∼1/ R0 when the filament is either very weak, where the filament is more conical, or quite strong, where the filament is more cylindrical. The physical implication of the B0 was also understood from the materials properties. The coherence between the model expectations for the bulkier conical filaments, typically found in TiO2, and the more random-network like filaments, typically found in NiO, suggests a common switching mechanism works in both materials.",

author = "Kim, {Kyung Min} and Lee, {Min Hwan} and Kim, {Gun Hwan} and Song, {Seul Ji} and Seok, {Jun Yeong} and Yoon, {Jung Ho} and Hwang, {Cheol Seong}",

note = "Funding Information: This study was supported by the National Research Program for the Nano Semiconductor Apparatus Development sponsored by the Korea Ministry of Knowledge and Economy, the Convergent Research Center program (Grant No. 2010K000977), and World Class University program through the National Research Foundation of Korea funded by the Ministry of Education, Science, and Technology (Grant No. R31-2008-000-10075-0).",

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AU - Kim, Kyung Min

AU - Lee, Min Hwan

AU - Kim, Gun Hwan

AU - Song, Seul Ji

AU - Seok, Jun Yeong

AU - Yoon, Jung Ho

AU - Hwang, Cheol Seong

N1 - Funding Information: This study was supported by the National Research Program for the Nano Semiconductor Apparatus Development sponsored by the Korea Ministry of Knowledge and Economy, the Convergent Research Center program (Grant No. 2010K000977), and World Class University program through the National Research Foundation of Korea funded by the Ministry of Education, Science, and Technology (Grant No. R31-2008-000-10075-0).

PY - 2010/10/18

Y1 - 2010/10/18

N2 - The relations between the reset current IR, room temperature filament resistance R0, and third harmonic coefficient B0 were evaluated by a conical filament model. It was found that IR ∼1/ R0 when the filament is either very weak, where the filament is more conical, or quite strong, where the filament is more cylindrical. The physical implication of the B0 was also understood from the materials properties. The coherence between the model expectations for the bulkier conical filaments, typically found in TiO2, and the more random-network like filaments, typically found in NiO, suggests a common switching mechanism works in both materials.

AB - The relations between the reset current IR, room temperature filament resistance R0, and third harmonic coefficient B0 were evaluated by a conical filament model. It was found that IR ∼1/ R0 when the filament is either very weak, where the filament is more conical, or quite strong, where the filament is more cylindrical. The physical implication of the B0 was also understood from the materials properties. The coherence between the model expectations for the bulkier conical filaments, typically found in TiO2, and the more random-network like filaments, typically found in NiO, suggests a common switching mechanism works in both materials.

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Understanding structure-property relationship of resistive switching oxide thin films using a conical filament model

Abstract

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