Unified compact model for junctionless multiple-gate FETs including source/drain extension regions

Min Soo Bae, Ilgu Yun

Research output: Contribution to journalArticlepeer-review

Abstract

This paper presents a unified compact model for a junctionless (JL) multiple-gate (MG) FET operating in the subthreshold region. A unified center potential model for double-gate, triple-gate, and quadruple-gate (QG) JL FETs is obtained using a quasi-3D scaling equation. The source/drain (S/D) extension regions are also modeled depending on the S/D extension length. The subthreshold current and subthreshold characteristics such as the subthreshold slope, threshold voltage, and drain-induced barrier lowering are analytically modeled for JL MG FETs. Comparison of the proposed models with numerical simulation results obtained using Sentaurus TCAD showed good accuracy, even for a very-short-channel QG device with a channel length of 10 nm. The proposed compact model can be used for low power circuit applications of JL MG FETs.

Original languageEnglish
Article number125001
JournalPhysica Scripta
Volume95
Issue number12
DOIs
Publication statusPublished - 2020 Dec

Bibliographical note

Publisher Copyright:
© 2020 IOP Publishing Ltd Printed in the UK

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Mathematical Physics
  • Condensed Matter Physics

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