Universal core model for multiple-gate field-effect transistors with short channel and quantum mechanical effects

Yong Hyeon Shin, Min Soo Bae, Chuntaek Park, Joung Won Park, Hyunwoo Park, Yong Ju Lee, Ilgu Yun

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Abstract

A universal core model for multiple-gate (MG) field-effect transistors (FETs) with short channel effects (SCEs) and quantum mechanical effects (QMEs) is proposed. By using a Young's approximation based solution for one-dimensional Poisson's equations the total inversion charge density (Q inv) in the channel is modeled for double-gate (DG) and surrounding-gate SG (SG) FETs, following which a universal charge model is derived based on the similarity of the solutions, including for quadruple-gate (QG) FETs. For triple-gate (TG) FETs, the average of DG and QG FETs are used. A SCEs model is also proposed considering the potential difference between the channel's surface and center. Finally, a QMEs model for MG FETs is developed using the quantum correction compact model. The proposed universal core model is validated on commercially available three-dimensional ATLAS numerical simulations.

Original languageEnglish
Article number065010
JournalSemiconductor Science and Technology
Volume33
Issue number6
DOIs
Publication statusPublished - 2018 May 16

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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