Universal core model for multiple-gate field-effect transistors with short channel and quantum mechanical effects

Yong Hyeon Shin, Min Soo Bae, Chuntaek Park, Joung Won Park, Hyunwoo Park, Yong Ju Lee, Ilgu Yun

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A universal core model for multiple-gate (MG) field-effect transistors (FETs) with short channel effects (SCEs) and quantum mechanical effects (QMEs) is proposed. By using a Young's approximation based solution for one-dimensional Poisson's equations the total inversion charge density (Q inv) in the channel is modeled for double-gate (DG) and surrounding-gate SG (SG) FETs, following which a universal charge model is derived based on the similarity of the solutions, including for quadruple-gate (QG) FETs. For triple-gate (TG) FETs, the average of DG and QG FETs are used. A SCEs model is also proposed considering the potential difference between the channel's surface and center. Finally, a QMEs model for MG FETs is developed using the quantum correction compact model. The proposed universal core model is validated on commercially available three-dimensional ATLAS numerical simulations.

Original languageEnglish
Article number065010
JournalSemiconductor Science and Technology
Volume33
Issue number6
DOIs
Publication statusPublished - 2018 May 16

Fingerprint

Gates (transistor)
field effect transistors
Poisson equation
Field effect transistors
Charge density
Computer simulation
inversions

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Shin, Yong Hyeon ; Bae, Min Soo ; Park, Chuntaek ; Park, Joung Won ; Park, Hyunwoo ; Lee, Yong Ju ; Yun, Ilgu. / Universal core model for multiple-gate field-effect transistors with short channel and quantum mechanical effects. In: Semiconductor Science and Technology. 2018 ; Vol. 33, No. 6.
@article{5d64f0ddbf9547e4a1b230cb9bfa94ab,
title = "Universal core model for multiple-gate field-effect transistors with short channel and quantum mechanical effects",
abstract = "A universal core model for multiple-gate (MG) field-effect transistors (FETs) with short channel effects (SCEs) and quantum mechanical effects (QMEs) is proposed. By using a Young's approximation based solution for one-dimensional Poisson's equations the total inversion charge density (Q inv) in the channel is modeled for double-gate (DG) and surrounding-gate SG (SG) FETs, following which a universal charge model is derived based on the similarity of the solutions, including for quadruple-gate (QG) FETs. For triple-gate (TG) FETs, the average of DG and QG FETs are used. A SCEs model is also proposed considering the potential difference between the channel's surface and center. Finally, a QMEs model for MG FETs is developed using the quantum correction compact model. The proposed universal core model is validated on commercially available three-dimensional ATLAS numerical simulations.",
author = "Shin, {Yong Hyeon} and Bae, {Min Soo} and Chuntaek Park and Park, {Joung Won} and Hyunwoo Park and Lee, {Yong Ju} and Ilgu Yun",
year = "2018",
month = "5",
day = "16",
doi = "10.1088/1361-6641/aac063",
language = "English",
volume = "33",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "6",

}

Universal core model for multiple-gate field-effect transistors with short channel and quantum mechanical effects. / Shin, Yong Hyeon; Bae, Min Soo; Park, Chuntaek; Park, Joung Won; Park, Hyunwoo; Lee, Yong Ju; Yun, Ilgu.

In: Semiconductor Science and Technology, Vol. 33, No. 6, 065010, 16.05.2018.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Universal core model for multiple-gate field-effect transistors with short channel and quantum mechanical effects

AU - Shin, Yong Hyeon

AU - Bae, Min Soo

AU - Park, Chuntaek

AU - Park, Joung Won

AU - Park, Hyunwoo

AU - Lee, Yong Ju

AU - Yun, Ilgu

PY - 2018/5/16

Y1 - 2018/5/16

N2 - A universal core model for multiple-gate (MG) field-effect transistors (FETs) with short channel effects (SCEs) and quantum mechanical effects (QMEs) is proposed. By using a Young's approximation based solution for one-dimensional Poisson's equations the total inversion charge density (Q inv) in the channel is modeled for double-gate (DG) and surrounding-gate SG (SG) FETs, following which a universal charge model is derived based on the similarity of the solutions, including for quadruple-gate (QG) FETs. For triple-gate (TG) FETs, the average of DG and QG FETs are used. A SCEs model is also proposed considering the potential difference between the channel's surface and center. Finally, a QMEs model for MG FETs is developed using the quantum correction compact model. The proposed universal core model is validated on commercially available three-dimensional ATLAS numerical simulations.

AB - A universal core model for multiple-gate (MG) field-effect transistors (FETs) with short channel effects (SCEs) and quantum mechanical effects (QMEs) is proposed. By using a Young's approximation based solution for one-dimensional Poisson's equations the total inversion charge density (Q inv) in the channel is modeled for double-gate (DG) and surrounding-gate SG (SG) FETs, following which a universal charge model is derived based on the similarity of the solutions, including for quadruple-gate (QG) FETs. For triple-gate (TG) FETs, the average of DG and QG FETs are used. A SCEs model is also proposed considering the potential difference between the channel's surface and center. Finally, a QMEs model for MG FETs is developed using the quantum correction compact model. The proposed universal core model is validated on commercially available three-dimensional ATLAS numerical simulations.

UR - http://www.scopus.com/inward/record.url?scp=85048142098&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85048142098&partnerID=8YFLogxK

U2 - 10.1088/1361-6641/aac063

DO - 10.1088/1361-6641/aac063

M3 - Article

AN - SCOPUS:85048142098

VL - 33

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 6

M1 - 065010

ER -