Universal Electrochemical Synthesis of Mesoporous Chalcogenide Semiconductors: Mesoporous CdSe and CdTe Thin Films for Optoelectronic Applications

Tomota Nagaura; Hoang Phuong Phan; Victor Malgras; Tuan Anh Pham; Hyunsoo Lim; Aditya Ashok; Jeonghun Kim; Jungmok You; Nam Trung Nguyen; Jongbeom Na; Yusuke Yamauchi

doi:10.1002/anie.202013541

Universal Electrochemical Synthesis of Mesoporous Chalcogenide Semiconductors: Mesoporous CdSe and CdTe Thin Films for Optoelectronic Applications

Tomota Nagaura, Hoang Phuong Phan, Victor Malgras, Tuan Anh Pham, Hyunsoo Lim, Aditya Ashok, Jeonghun Kim, Jungmok You, Nam Trung Nguyen, Jongbeom Na, Yusuke Yamauchi

Department of Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Here we report the soft-template-assisted electrochemical deposition of mesoporous semiconductors (CdSe and CdTe). The resulting mesoporous films are stoichiometrically equivalent and contain mesopores homogeneously distributed over the entire surface. To demonstrate the versatility of the method, two block copolymers with different molecular weights are used, yielding films with pores of either 9 or 18 nm diameter. As a proof of concept, the mesoporous CdSe film-based photodetectors show a high sensitivity of 204 mW⁻¹ cm² at 680 nm wavelength, which is at least two orders of magnitude more sensitive than the bulk counterpart. This work presents a new synthesis route for nanostructured semiconductors with optical band gaps active in the visible spectrum.

Original language	English
Pages (from-to)	9660-9665
Number of pages	6
Journal	Angewandte Chemie - International Edition
Volume	60
Issue number	17
DOIs	https://doi.org/10.1002/anie.202013541
Publication status	Published - 2021 Apr 19

Bibliographical note

Funding Information:
The authors acknowledge the financial support from JX Nippon Mining & Metals Corporation. This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2020R1A6A3A03039037 and 2020R1C1C1004459). H.H.P. acknowledges the research support from Australian Research Council, grant number DE200100238. This work was also performed in part at the Queensland node of the Australian National Fabrication Facility (ANFF-Q), a company established under the National Collaborative Research Infrastructure Strategy to provide nano and microfabrication facilities for Australian researchers.

Publisher Copyright:
© 2020 Wiley-VCH GmbH

All Science Journal Classification (ASJC) codes

Catalysis
Chemistry(all)

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10.1002/anie.202013541

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Nagaura, T., Phan, H. P., Malgras, V., Pham, T. A., Lim, H., Ashok, A., Kim, J., You, J., Nguyen, N. T., Na, J., & Yamauchi, Y. (2021). Universal Electrochemical Synthesis of Mesoporous Chalcogenide Semiconductors: Mesoporous CdSe and CdTe Thin Films for Optoelectronic Applications. Angewandte Chemie - International Edition, 60(17), 9660-9665. https://doi.org/10.1002/anie.202013541

Nagaura, Tomota ; Phan, Hoang Phuong ; Malgras, Victor ; Pham, Tuan Anh ; Lim, Hyunsoo ; Ashok, Aditya ; Kim, Jeonghun ; You, Jungmok ; Nguyen, Nam Trung ; Na, Jongbeom ; Yamauchi, Yusuke. / Universal Electrochemical Synthesis of Mesoporous Chalcogenide Semiconductors : Mesoporous CdSe and CdTe Thin Films for Optoelectronic Applications. In: Angewandte Chemie - International Edition. 2021 ; Vol. 60, No. 17. pp. 9660-9665.

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title = "Universal Electrochemical Synthesis of Mesoporous Chalcogenide Semiconductors: Mesoporous CdSe and CdTe Thin Films for Optoelectronic Applications",

abstract = "Here we report the soft-template-assisted electrochemical deposition of mesoporous semiconductors (CdSe and CdTe). The resulting mesoporous films are stoichiometrically equivalent and contain mesopores homogeneously distributed over the entire surface. To demonstrate the versatility of the method, two block copolymers with different molecular weights are used, yielding films with pores of either 9 or 18 nm diameter. As a proof of concept, the mesoporous CdSe film-based photodetectors show a high sensitivity of 204 mW−1 cm2 at 680 nm wavelength, which is at least two orders of magnitude more sensitive than the bulk counterpart. This work presents a new synthesis route for nanostructured semiconductors with optical band gaps active in the visible spectrum.",

author = "Tomota Nagaura and Phan, {Hoang Phuong} and Victor Malgras and Pham, {Tuan Anh} and Hyunsoo Lim and Aditya Ashok and Jeonghun Kim and Jungmok You and Nguyen, {Nam Trung} and Jongbeom Na and Yusuke Yamauchi",

note = "Funding Information: The authors acknowledge the financial support from JX Nippon Mining & Metals Corporation. This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2020R1A6A3A03039037 and 2020R1C1C1004459). H.H.P. acknowledges the research support from Australian Research Council, grant number DE200100238. This work was also performed in part at the Queensland node of the Australian National Fabrication Facility (ANFF-Q), a company established under the National Collaborative Research Infrastructure Strategy to provide nano and microfabrication facilities for Australian researchers. Publisher Copyright: {\textcopyright} 2020 Wiley-VCH GmbH",

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Nagaura, T, Phan, HP, Malgras, V, Pham, TA, Lim, H, Ashok, A, Kim, J, You, J, Nguyen, NT, Na, J & Yamauchi, Y 2021, 'Universal Electrochemical Synthesis of Mesoporous Chalcogenide Semiconductors: Mesoporous CdSe and CdTe Thin Films for Optoelectronic Applications', Angewandte Chemie - International Edition, vol. 60, no. 17, pp. 9660-9665. https://doi.org/10.1002/anie.202013541

Universal Electrochemical Synthesis of Mesoporous Chalcogenide Semiconductors : Mesoporous CdSe and CdTe Thin Films for Optoelectronic Applications. / Nagaura, Tomota; Phan, Hoang Phuong; Malgras, Victor; Pham, Tuan Anh; Lim, Hyunsoo; Ashok, Aditya; Kim, Jeonghun; You, Jungmok; Nguyen, Nam Trung; Na, Jongbeom; Yamauchi, Yusuke.

In: Angewandte Chemie - International Edition, Vol. 60, No. 17, 19.04.2021, p. 9660-9665.

Research output: Contribution to journal › Article › peer-review

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T1 - Universal Electrochemical Synthesis of Mesoporous Chalcogenide Semiconductors

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AU - Phan, Hoang Phuong

AU - Malgras, Victor

AU - Pham, Tuan Anh

AU - Lim, Hyunsoo

AU - Ashok, Aditya

AU - Kim, Jeonghun

AU - You, Jungmok

AU - Nguyen, Nam Trung

AU - Na, Jongbeom

AU - Yamauchi, Yusuke

N1 - Funding Information: The authors acknowledge the financial support from JX Nippon Mining & Metals Corporation. This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2020R1A6A3A03039037 and 2020R1C1C1004459). H.H.P. acknowledges the research support from Australian Research Council, grant number DE200100238. This work was also performed in part at the Queensland node of the Australian National Fabrication Facility (ANFF-Q), a company established under the National Collaborative Research Infrastructure Strategy to provide nano and microfabrication facilities for Australian researchers. Publisher Copyright: © 2020 Wiley-VCH GmbH

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Universal Electrochemical Synthesis of Mesoporous Chalcogenide Semiconductors: Mesoporous CdSe and CdTe Thin Films for Optoelectronic Applications

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