Unusual near-band-edge photoluminescence at room temperature in heavily-doped ZnO:Al thin films prepared by pulsed laser deposition

Bhaskar Chandra Mohanty, Deuk Ho Yeon, Sachindra Nath Das, Ji Hye Kwak, Kyung Hoon Yoon, Yong Soo Cho

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Room temperature photoluminescence (PL) properties of heavily-doped ZnO:Al thin films (with carrier concentration n in the range of 5-20 × 10 20 cm-3) prepared by pulsed laser deposition have been investigated. Despite their high carrier concentration, the films exhibited strong room temperature near-band-edge bound excitons at ∼3.34 eV and an unusual peak at ∼3.16 eV, and negligible deep-level emission even for the films deposited at a temperature as low as 25 C. The radiative efficiency of the films increased with growth temperature as a result of increased n and improved crystallinity. A large blue shift of optical band gap was observed, which is consistent with the n-dependent Burstein-Moss and band gap-renormalization effects. Comparison of the results of the PL and optical measurements revealed a large Stokes shift that increased with increase in n. It has been explained by a model based on local potential fluctuations caused by randomly-distributed doping impurities.

Original languageEnglish
Pages (from-to)610-615
Number of pages6
JournalMaterials Chemistry and Physics
Volume140
Issue number2-3
DOIs
Publication statusPublished - 2013 Jul 15

Fingerprint

Pulsed laser deposition
pulsed laser deposition
Photoluminescence
photoluminescence
Thin films
Carrier concentration
room temperature
thin films
Bryophytes
Optical band gaps
Growth temperature
optical measurement
blue shift
Excitons
Temperature
crystallinity
Energy gap
Doping (additives)
excitons
Impurities

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Mohanty, Bhaskar Chandra ; Yeon, Deuk Ho ; Das, Sachindra Nath ; Kwak, Ji Hye ; Yoon, Kyung Hoon ; Cho, Yong Soo. / Unusual near-band-edge photoluminescence at room temperature in heavily-doped ZnO:Al thin films prepared by pulsed laser deposition. In: Materials Chemistry and Physics. 2013 ; Vol. 140, No. 2-3. pp. 610-615.
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Unusual near-band-edge photoluminescence at room temperature in heavily-doped ZnO:Al thin films prepared by pulsed laser deposition. / Mohanty, Bhaskar Chandra; Yeon, Deuk Ho; Das, Sachindra Nath; Kwak, Ji Hye; Yoon, Kyung Hoon; Cho, Yong Soo.

In: Materials Chemistry and Physics, Vol. 140, No. 2-3, 15.07.2013, p. 610-615.

Research output: Contribution to journalArticle

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AU - Mohanty, Bhaskar Chandra

AU - Yeon, Deuk Ho

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AU - Kwak, Ji Hye

AU - Yoon, Kyung Hoon

AU - Cho, Yong Soo

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