Use of ordered mesoporous SiO2 as protection against thermal disturbance in phase-change memory

Tae Jung Ha; Sangwoo Shin; Hyung Keun Kim; Min Hee Hong; Chang Sun Park; Hyung Hee Cho; Doo Jin Choi; Hyung Ho Park

doi:10.1063/1.4801476

Use of ordered mesoporous SiO₂ as protection against thermal disturbance in phase-change memory

Tae Jung Ha, Sangwoo Shin, Hyung Keun Kim, Min Hee Hong, Chang Sun Park, Hyung Hee Cho, Doo Jin Choi, Hyung Ho Park

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

To commercialize phase change memory (PCM), a drastic change of resistivity at specific temperatures and a low power consumption to minimize heat transfer to neighboring cells are needed. Therefore, in this work, an ordered mesoporous SiO₂ thin film of 45% porosity was introduced as an intercell dielectric in Ge₁Sb₄Te₇ PCM because it has a low thermal conductivity (0.177 W/m K). By using a hybrid layer structure of mesoporous and dense SiO₂ films, the temperature of neighboring cells could be decreased from 393.3 K to 353.2 K, corresponding to a 100-fold change in resistivity.

Original language	English
Article number	144102
Journal	Applied Physics Letters
Volume	102
Issue number	14
DOIs	https://doi.org/10.1063/1.4801476
Publication status	Published - 2013 Apr 8

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (No. 2012R1A2A2A01011014).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4801476

Cite this

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title = "Use of ordered mesoporous SiO2 as protection against thermal disturbance in phase-change memory",

abstract = "To commercialize phase change memory (PCM), a drastic change of resistivity at specific temperatures and a low power consumption to minimize heat transfer to neighboring cells are needed. Therefore, in this work, an ordered mesoporous SiO2 thin film of 45% porosity was introduced as an intercell dielectric in Ge1Sb4Te7 PCM because it has a low thermal conductivity (0.177 W/m K). By using a hybrid layer structure of mesoporous and dense SiO2 films, the temperature of neighboring cells could be decreased from 393.3 K to 353.2 K, corresponding to a 100-fold change in resistivity.",

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AU - Ha, Tae Jung

AU - Shin, Sangwoo

AU - Keun Kim, Hyung

AU - Hong, Min Hee

AU - Park, Chang Sun

AU - Hee Cho, Hyung

AU - Jin Choi, Doo

AU - Park, Hyung Ho

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