Use of ordered mesoporous SiO2 as protection against thermal disturbance in phase-change memory

Tae Jung Ha, Sangwoo Shin, Hyung Keun Kim, Min Hee Hong, Chang Sun Park, Hyung Hee Cho, Doo Jin Choi, Hyung Ho Park

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6 Citations (Scopus)


To commercialize phase change memory (PCM), a drastic change of resistivity at specific temperatures and a low power consumption to minimize heat transfer to neighboring cells are needed. Therefore, in this work, an ordered mesoporous SiO2 thin film of 45% porosity was introduced as an intercell dielectric in Ge1Sb4Te7 PCM because it has a low thermal conductivity (0.177 W/m K). By using a hybrid layer structure of mesoporous and dense SiO2 films, the temperature of neighboring cells could be decreased from 393.3 K to 353.2 K, corresponding to a 100-fold change in resistivity.

Original languageEnglish
Article number144102
JournalApplied Physics Letters
Issue number14
Publication statusPublished - 2013 Apr 8

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (No. 2012R1A2A2A01011014).

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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