Use of spin-on-hard mask materials for nano scale patterning technology

Wen Hao Wu, Edward Y. Chang, Hwan Sung Cheon, Sang Kyun Kim, Hyeon Mo Cho, Kyong Ho Yoon, Jong Seob Kim, Tuwon Chang, Seongho Shin

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

Amorphous Carbon Layer (ACL) and SiON system has been proven to be a good hardmask combination. These layers are formed by a high cost, low throughput CVD process. This paper discloses a reliable, low cost, high throughput process using a simple spin on layer structure. Through manipulation of various parameters, additional BARC layer is eliminated and the process is further simplified to a tri-layer structure. Also, PR/SiON/C-SOH (Carbon-Spin-On- Hardmask) system has been compared to PR / Si-SOH (Si-Spin-On-Hardmask) / C-SOH system and found their performances are comparable. This indicates the PR / Si-SOH / C-SOH process is an economical yet comparable substitute.

Original languageEnglish
Article number71402Q
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume7140
DOIs
Publication statusPublished - 2008 Dec 1
EventLithography Asia 2008 - Taipei, Taiwan, Province of China
Duration: 2008 Nov 42008 Nov 6

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Wu, W. H., Chang, E. Y., Cheon, H. S., Kim, S. K., Cho, H. M., Yoon, K. H., Kim, J. S., Chang, T., & Shin, S. (2008). Use of spin-on-hard mask materials for nano scale patterning technology. Proceedings of SPIE - The International Society for Optical Engineering, 7140, [71402Q]. https://doi.org/10.1117/12.804695