UV-visible spectroscopic analysis of electrical properties in alkali metal-doped amorphous zinc tin oxide thin-film transistors

Keon Hee Lim, Kyongjun Kim, Seonjo Kim, Si Yun Park, Hyungjun Kim, Youn Sang Kim

Research output: Contribution to journalArticle

64 Citations (Scopus)

Abstract

Solution-processed and alkali metals, such as Li and Na, are introduced in doped amorphous zinc tin oxide (ZTO) semiconductor TFTs, which show better electrical performance, such as improved field effect mobility, than intrinsic amorphous ZTO semiconductor TFTs. Furthermore, by using spectroscopic UV-visible analysis we propose a comprehensive technique for monitoring the improved electrical performance induced by alkali metal doping in terms of the change in optical properties. The change in the optical bandgap supported by the Burstein-Moss theory could successfully show a mobility increase that is related to interstitial doping of alkali metal in ZTO semiconductors.

Original languageEnglish
Pages (from-to)2994-3000
Number of pages7
JournalAdvanced Materials
Volume25
Issue number21
DOIs
Publication statusPublished - 2013 Jun 4

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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