V th variation and strain control of high Ge% thin SiGe channels by millisecond anneal realizing high performance pMOSFET beyond 16nm node

S. H. Lee, J. Huang, P. Majhi, P. D. Kirsch, B. G. Min, C. S. Park, J. Oh, W. Y. Loh, C. Y. Kang, B. Sassman, P. Y. Hung, S. McCoy, J. Chen, B. Wu, G. Moori, D. Heh, C. Young, G. Bersuker, H. H. Tseng, S. K. BanerjeeR. Jammy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

19 Citations (Scopus)

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Engineering & Materials Science