Vacancy defects in low-temperature-grown GaAs observed by continuous and pulsed slow positrons

J. Gebauer, R. Krause-Rehberg, S. Eichler, W. Bauer-Kugelmann, G. Kögel, W. Trifthäuser, M. Luysberg, H. Sohn, E. R. Weber

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Abstract

A systematic investigation of GaAs grown at low temperatures (LT-GaAs) was carried out. The vacancy defects in the as-grown material were identified to be mainly Ga vacancies by comparing the core-(W) and valence-(S) annihilation parameters to that of Ga vacancies in highly Si-doped GaAs. The vacancy concentration increases up to 1018 cm-3. Isochronal annealing was done at various samples. The S parameter in the samples increases with annealing, suggesting the formation of new defects. By checking the correlation between S and W we estimated that the defects seen in annealed LT-GaAs are physically different from that in the as-grown state. The annealed samples showed nearly saturated trapping with a defect related positron lifetime of 345 ps, which can be attributed to vacancy clusters or the As precipitates found by correlated TEM measurements.

Original languageEnglish
Pages (from-to)204-208
Number of pages5
JournalMaterials Science Forum
Volume255-257
Publication statusPublished - 1997 Dec 1

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Gebauer, J., Krause-Rehberg, R., Eichler, S., Bauer-Kugelmann, W., Kögel, G., Trifthäuser, W., Luysberg, M., Sohn, H., & Weber, E. R. (1997). Vacancy defects in low-temperature-grown GaAs observed by continuous and pulsed slow positrons. Materials Science Forum, 255-257, 204-208.