This research demonstrates a method to reduce the resistance of amorphous indium-gallium-zinc-oxide (a-IGZO) using a "vacuum-free solution-based metallization"(VSM) process, which revolutionizes the metallization process thanks to its simplicity, by simply dipping the a-IGZO into trimethyl aluminium (TMA, (CH3)3Al) solution. From the XPS results, it was found that oxygen vacancies were generated after the VSM process, resulting in the enhanced conductivity. Various metallization time and solution temperature conditions were investigated, and the measured conductivity of the a-IGZO could be enhanced up to 20.32 S cm-1, which is over 105 times larger compared to that of the untreated a-IGZO. By utilizing the VSM process, self-aligned top-gate (SATG) a-IGZO thin-film-transistors (TFTs) were successfully fabricated, and to provide an explanation for the mechanism, X-ray photoelectron spectroscopy (XPS) was employed.
|Number of pages||6|
|Publication status||Published - 2022 Jan 27|
Bibliographical noteFunding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. 2020R1A2C2004864).
© The Royal Society of Chemistry.
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)