Van der Waals junction field effect transistors with both n- and p-channel transition metal dichalcogenides

June Yeong Lim, Minju Kim, Yeonsu Jeong, Kyeong Rok Ko, Sanghyuck Yu, Hyung Gon Shin, Jae Young Moon, Young Jai Choi, Yeonjin Yi, Taekyeong Kim, Seongil Im

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Two-dimensional (2D) transition metal dichalcogenides (TMDs)-based van der Waals (vdW) PN junctions have been used for heterojunction diodes, which basically utilize out-of-plane current across the junction interface. In fact, the same vdW PN junction structure can be utilized for another important device application, junction field effect transistors (JFETs), where in-plane current is possible along with 2D–2D heterojunction interface. Moreover, the 2D TMD-based JFET can use both p- and n-channel for low voltage operation, which might be its unique feature. Here we report vdW JFETs as an in-plane current device with heterojunction between semiconducting p- and n-TMDs. Since this vdW JFET would have low-density traps at the vdW interface unlike 2D TMD-based metal insulator semiconductor field effect transistors (MISFETs), little hysteresis of 0.0–0.1 V and best subthreshold swing of ~100 mV/dec were achieved. Easy saturation was observed either from n-channel or p-channel JFET as another advantage over 2D MISFETs, exhibiting early pinch-off at ~1 V. Operational gate voltage for threshold was near 0 V and our highest mobility reaches to ~>500 cm2/V·s for n-channel JFET with MoS2 channel. For 1 V JFET operation, our best ON/OFF current ratio was observed to be ~104.

Original languageEnglish
Article number37
Journalnpj 2D Materials and Applications
Volume2
Issue number1
DOIs
Publication statusPublished - 2018 Dec 1

Fingerprint

JFET
Field effect transistors
Transition metals
transition metals
MISFET devices
Heterojunctions
heterojunctions
MIS (semiconductors)
field effect transistors
Electric potential
low voltage
Hysteresis
Diodes
hysteresis
diodes
traps
saturation
thresholds
electric potential

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanical Engineering
  • Mechanics of Materials
  • Condensed Matter Physics
  • Chemistry(all)

Cite this

Lim, June Yeong ; Kim, Minju ; Jeong, Yeonsu ; Ko, Kyeong Rok ; Yu, Sanghyuck ; Shin, Hyung Gon ; Moon, Jae Young ; Choi, Young Jai ; Yi, Yeonjin ; Kim, Taekyeong ; Im, Seongil. / Van der Waals junction field effect transistors with both n- and p-channel transition metal dichalcogenides. In: npj 2D Materials and Applications. 2018 ; Vol. 2, No. 1.
@article{e73826ed8acb465db8bfc1551bac61ab,
title = "Van der Waals junction field effect transistors with both n- and p-channel transition metal dichalcogenides",
abstract = "Two-dimensional (2D) transition metal dichalcogenides (TMDs)-based van der Waals (vdW) PN junctions have been used for heterojunction diodes, which basically utilize out-of-plane current across the junction interface. In fact, the same vdW PN junction structure can be utilized for another important device application, junction field effect transistors (JFETs), where in-plane current is possible along with 2D–2D heterojunction interface. Moreover, the 2D TMD-based JFET can use both p- and n-channel for low voltage operation, which might be its unique feature. Here we report vdW JFETs as an in-plane current device with heterojunction between semiconducting p- and n-TMDs. Since this vdW JFET would have low-density traps at the vdW interface unlike 2D TMD-based metal insulator semiconductor field effect transistors (MISFETs), little hysteresis of 0.0–0.1 V and best subthreshold swing of ~100 mV/dec were achieved. Easy saturation was observed either from n-channel or p-channel JFET as another advantage over 2D MISFETs, exhibiting early pinch-off at ~1 V. Operational gate voltage for threshold was near 0 V and our highest mobility reaches to ~>500 cm2/V·s for n-channel JFET with MoS2 channel. For 1 V JFET operation, our best ON/OFF current ratio was observed to be ~104.",
author = "Lim, {June Yeong} and Minju Kim and Yeonsu Jeong and Ko, {Kyeong Rok} and Sanghyuck Yu and Shin, {Hyung Gon} and Moon, {Jae Young} and Choi, {Young Jai} and Yeonjin Yi and Taekyeong Kim and Seongil Im",
year = "2018",
month = "12",
day = "1",
doi = "10.1038/s41699-018-0082-2",
language = "English",
volume = "2",
journal = "npj 2D Materials and Applications",
issn = "2397-7132",
number = "1",

}

Van der Waals junction field effect transistors with both n- and p-channel transition metal dichalcogenides. / Lim, June Yeong; Kim, Minju; Jeong, Yeonsu; Ko, Kyeong Rok; Yu, Sanghyuck; Shin, Hyung Gon; Moon, Jae Young; Choi, Young Jai; Yi, Yeonjin; Kim, Taekyeong; Im, Seongil.

In: npj 2D Materials and Applications, Vol. 2, No. 1, 37, 01.12.2018.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Van der Waals junction field effect transistors with both n- and p-channel transition metal dichalcogenides

AU - Lim, June Yeong

AU - Kim, Minju

AU - Jeong, Yeonsu

AU - Ko, Kyeong Rok

AU - Yu, Sanghyuck

AU - Shin, Hyung Gon

AU - Moon, Jae Young

AU - Choi, Young Jai

AU - Yi, Yeonjin

AU - Kim, Taekyeong

AU - Im, Seongil

PY - 2018/12/1

Y1 - 2018/12/1

N2 - Two-dimensional (2D) transition metal dichalcogenides (TMDs)-based van der Waals (vdW) PN junctions have been used for heterojunction diodes, which basically utilize out-of-plane current across the junction interface. In fact, the same vdW PN junction structure can be utilized for another important device application, junction field effect transistors (JFETs), where in-plane current is possible along with 2D–2D heterojunction interface. Moreover, the 2D TMD-based JFET can use both p- and n-channel for low voltage operation, which might be its unique feature. Here we report vdW JFETs as an in-plane current device with heterojunction between semiconducting p- and n-TMDs. Since this vdW JFET would have low-density traps at the vdW interface unlike 2D TMD-based metal insulator semiconductor field effect transistors (MISFETs), little hysteresis of 0.0–0.1 V and best subthreshold swing of ~100 mV/dec were achieved. Easy saturation was observed either from n-channel or p-channel JFET as another advantage over 2D MISFETs, exhibiting early pinch-off at ~1 V. Operational gate voltage for threshold was near 0 V and our highest mobility reaches to ~>500 cm2/V·s for n-channel JFET with MoS2 channel. For 1 V JFET operation, our best ON/OFF current ratio was observed to be ~104.

AB - Two-dimensional (2D) transition metal dichalcogenides (TMDs)-based van der Waals (vdW) PN junctions have been used for heterojunction diodes, which basically utilize out-of-plane current across the junction interface. In fact, the same vdW PN junction structure can be utilized for another important device application, junction field effect transistors (JFETs), where in-plane current is possible along with 2D–2D heterojunction interface. Moreover, the 2D TMD-based JFET can use both p- and n-channel for low voltage operation, which might be its unique feature. Here we report vdW JFETs as an in-plane current device with heterojunction between semiconducting p- and n-TMDs. Since this vdW JFET would have low-density traps at the vdW interface unlike 2D TMD-based metal insulator semiconductor field effect transistors (MISFETs), little hysteresis of 0.0–0.1 V and best subthreshold swing of ~100 mV/dec were achieved. Easy saturation was observed either from n-channel or p-channel JFET as another advantage over 2D MISFETs, exhibiting early pinch-off at ~1 V. Operational gate voltage for threshold was near 0 V and our highest mobility reaches to ~>500 cm2/V·s for n-channel JFET with MoS2 channel. For 1 V JFET operation, our best ON/OFF current ratio was observed to be ~104.

UR - http://www.scopus.com/inward/record.url?scp=85063158176&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85063158176&partnerID=8YFLogxK

U2 - 10.1038/s41699-018-0082-2

DO - 10.1038/s41699-018-0082-2

M3 - Article

AN - SCOPUS:85063158176

VL - 2

JO - npj 2D Materials and Applications

JF - npj 2D Materials and Applications

SN - 2397-7132

IS - 1

M1 - 37

ER -