Van der Waals junction field effect transistors with both n- and p-channel transition metal dichalcogenides

June Yeong Lim, Minju Kim, Yeonsu Jeong, Kyeong Rok Ko, Sanghyuck Yu, Hyung Gon Shin, Jae Young Moon, Young Jai Choi, Yeonjin Yi, Taekyeong Kim, Seongil Im

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

Two-dimensional (2D) transition metal dichalcogenides (TMDs)-based van der Waals (vdW) PN junctions have been used for heterojunction diodes, which basically utilize out-of-plane current across the junction interface. In fact, the same vdW PN junction structure can be utilized for another important device application, junction field effect transistors (JFETs), where in-plane current is possible along with 2D–2D heterojunction interface. Moreover, the 2D TMD-based JFET can use both p- and n-channel for low voltage operation, which might be its unique feature. Here we report vdW JFETs as an in-plane current device with heterojunction between semiconducting p- and n-TMDs. Since this vdW JFET would have low-density traps at the vdW interface unlike 2D TMD-based metal insulator semiconductor field effect transistors (MISFETs), little hysteresis of 0.0–0.1 V and best subthreshold swing of ~100 mV/dec were achieved. Easy saturation was observed either from n-channel or p-channel JFET as another advantage over 2D MISFETs, exhibiting early pinch-off at ~1 V. Operational gate voltage for threshold was near 0 V and our highest mobility reaches to ~>500 cm2/V·s for n-channel JFET with MoS2 channel. For 1 V JFET operation, our best ON/OFF current ratio was observed to be ~104.

Original languageEnglish
Article number37
Journalnpj 2D Materials and Applications
Volume2
Issue number1
DOIs
Publication statusPublished - 2018 Dec 1

Bibliographical note

Funding Information:
The authors acknowledge the financial support from NRF (NRL program: Grant No. 2017R1A2A1A05001278, SRC program: Grant No.2017R1A5A1014862, vdWMRC center). J.Y.L. acknowledges the tuition support from the Hyundai Motor Chung Mong-Koo Foundation.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanical Engineering
  • Mechanics of Materials
  • Condensed Matter Physics
  • Chemistry(all)

Fingerprint Dive into the research topics of 'Van der Waals junction field effect transistors with both n- and p-channel transition metal dichalcogenides'. Together they form a unique fingerprint.

Cite this