Vapor-liquid-solid growth of semiconductor nanowires

Research output: Chapter in Book/Report/Conference proceedingChapter

13 Citations (Scopus)

Abstract

Nanowires make possible to manipulate light in novel methods and thus are promising materials for advanced optoelectronics. To exploit the potential, the growth behavior has to be controlled since it dominates the physical and chemical states and, in turn, the optical properties of nanowires. In this chapter, the vapor-liquid-solid (VLS) mechanism for the growth and modulation of nanowires was discussed. The chapter first reviewed the fundamental aspects of the VLS mechanism. Then the state of the art of the growth and modulation of nanowires for optoelectronics were discussed from the point of view of the critical issues pertaining to this mechanism. Some examples of optoelectronic devices that had been fabricated based on the VLS mechanism were also reviewed in an effort to cover the cutting edge technology in this area. Lastly, a summary and several different perspectives on the VLS mechanism were presented.

Original languageEnglish
Title of host publicationSemiconductor Nanostructures for Optoelectronic Devices
Subtitle of host publicationProcessing, Characterization and Applications
EditorsGyu-Chul Yi
Pages1-36
Number of pages36
DOIs
Publication statusPublished - 2012 Oct 8

Publication series

NameNanoScience and Technology
Volume58
ISSN (Print)1434-4904

Fingerprint

Nanowires
nanowires
Vapors
Optoelectronic devices
vapors
Semiconductor materials
Liquids
liquids
Modulation
modulation
optoelectronic devices
Optical properties
optical properties

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Choi, H. J. (2012). Vapor-liquid-solid growth of semiconductor nanowires. In G-C. Yi (Ed.), Semiconductor Nanostructures for Optoelectronic Devices: Processing, Characterization and Applications (pp. 1-36). (NanoScience and Technology; Vol. 58). https://doi.org/10.1007/978-3-642-22480-5 1
Choi, Heon Jin. / Vapor-liquid-solid growth of semiconductor nanowires. Semiconductor Nanostructures for Optoelectronic Devices: Processing, Characterization and Applications. editor / Gyu-Chul Yi. 2012. pp. 1-36 (NanoScience and Technology).
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Choi, HJ 2012, Vapor-liquid-solid growth of semiconductor nanowires. in G-C Yi (ed.), Semiconductor Nanostructures for Optoelectronic Devices: Processing, Characterization and Applications. NanoScience and Technology, vol. 58, pp. 1-36. https://doi.org/10.1007/978-3-642-22480-5 1

Vapor-liquid-solid growth of semiconductor nanowires. / Choi, Heon Jin.

Semiconductor Nanostructures for Optoelectronic Devices: Processing, Characterization and Applications. ed. / Gyu-Chul Yi. 2012. p. 1-36 (NanoScience and Technology; Vol. 58).

Research output: Chapter in Book/Report/Conference proceedingChapter

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AB - Nanowires make possible to manipulate light in novel methods and thus are promising materials for advanced optoelectronics. To exploit the potential, the growth behavior has to be controlled since it dominates the physical and chemical states and, in turn, the optical properties of nanowires. In this chapter, the vapor-liquid-solid (VLS) mechanism for the growth and modulation of nanowires was discussed. The chapter first reviewed the fundamental aspects of the VLS mechanism. Then the state of the art of the growth and modulation of nanowires for optoelectronics were discussed from the point of view of the critical issues pertaining to this mechanism. Some examples of optoelectronic devices that had been fabricated based on the VLS mechanism were also reviewed in an effort to cover the cutting edge technology in this area. Lastly, a summary and several different perspectives on the VLS mechanism were presented.

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Choi HJ. Vapor-liquid-solid growth of semiconductor nanowires. In Yi G-C, editor, Semiconductor Nanostructures for Optoelectronic Devices: Processing, Characterization and Applications. 2012. p. 1-36. (NanoScience and Technology). https://doi.org/10.1007/978-3-642-22480-5 1