Vapor-solid growth of Te-rich SbTe nanowires on a template of nano-size trenches

Jin Hwan Jeong, Si Jung Park, Su Bin An, Doo Jin Choi

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

In this article, the growth of Te-rich SbTe nanowires inside the trench structure for phase change random access memory (PCRAM) was investigated using a modified atomic vapor deposition system. On the basis of understanding the film formation process and the kinetic parameters related to the boundary layer model, overall experimental conditions such as gas flow rate, working pressure, deposition temperature, and precursor injection fraction were controlled and analyzed to grow nanowires instead of thin films. The deposition behaviors were observed by top-view and cross-sectional SEM. Te-rich SbTe nanowires of well-ordered and even size were obtained on the trench structure as a template for growth despite not using any metallic catalysts. The crystallinity of the nanowires was confirmed by XRD and TEM. We expect that this work will provide a way to overcome the difficulty of filling nano-scale trenches by a conventional film deposition method.

Original languageEnglish
Pages (from-to)47-52
Number of pages6
JournalJournal of Crystal Growth
Volume410
DOIs
Publication statusPublished - 2015 Feb 15

Fingerprint

Nanowires
nanowires
templates
Vapors
vapors
Vapor deposition
random access memory
Kinetic parameters
gas flow
Flow of gases
boundary layers
crystallinity
Boundary layers
flow velocity
Flow rate
vapor deposition
injection
Transmission electron microscopy
Data storage equipment
catalysts

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Jeong, Jin Hwan ; Park, Si Jung ; An, Su Bin ; Choi, Doo Jin. / Vapor-solid growth of Te-rich SbTe nanowires on a template of nano-size trenches. In: Journal of Crystal Growth. 2015 ; Vol. 410. pp. 47-52.
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Vapor-solid growth of Te-rich SbTe nanowires on a template of nano-size trenches. / Jeong, Jin Hwan; Park, Si Jung; An, Su Bin; Choi, Doo Jin.

In: Journal of Crystal Growth, Vol. 410, 15.02.2015, p. 47-52.

Research output: Contribution to journalArticle

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AB - In this article, the growth of Te-rich SbTe nanowires inside the trench structure for phase change random access memory (PCRAM) was investigated using a modified atomic vapor deposition system. On the basis of understanding the film formation process and the kinetic parameters related to the boundary layer model, overall experimental conditions such as gas flow rate, working pressure, deposition temperature, and precursor injection fraction were controlled and analyzed to grow nanowires instead of thin films. The deposition behaviors were observed by top-view and cross-sectional SEM. Te-rich SbTe nanowires of well-ordered and even size were obtained on the trench structure as a template for growth despite not using any metallic catalysts. The crystallinity of the nanowires was confirmed by XRD and TEM. We expect that this work will provide a way to overcome the difficulty of filling nano-scale trenches by a conventional film deposition method.

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