Variability modeling of RF characteristics for multi-finger MOSFETs using statistical methods

Hyuck Sang Yim, Jung Han Kang, Ilgu Yun

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

In this paper, the AC circuit model of multi-finger MOSFET for RF application is investigated. Test structures varying with the gate width and the number of fingers are fabricated in 0.35-μm TSMC process. The s-parameters of test structures are measured from 50MHz to 10GHz. The equivalent circuit model is proposed by hybrids of BSIM3 and the parasitic components. The parasitic components are extracted by optimizing the parameters using the measured DC and RF characteristics. Based on the extracted circuit models, the extracted parameters are verified by the analysis of variance.

Original languageEnglish
Article number5507890
JournalProceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium
DOIs
Publication statusPublished - 2008 Dec 1

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Statistical methods
Networks (circuits)
Analysis of variance (ANOVA)
Equivalent circuits

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering

Cite this

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title = "Variability modeling of RF characteristics for multi-finger MOSFETs using statistical methods",
abstract = "In this paper, the AC circuit model of multi-finger MOSFET for RF application is investigated. Test structures varying with the gate width and the number of fingers are fabricated in 0.35-μm TSMC process. The s-parameters of test structures are measured from 50MHz to 10GHz. The equivalent circuit model is proposed by hybrids of BSIM3 and the parasitic components. The parasitic components are extracted by optimizing the parameters using the measured DC and RF characteristics. Based on the extracted circuit models, the extracted parameters are verified by the analysis of variance.",
author = "Yim, {Hyuck Sang} and Kang, {Jung Han} and Ilgu Yun",
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N2 - In this paper, the AC circuit model of multi-finger MOSFET for RF application is investigated. Test structures varying with the gate width and the number of fingers are fabricated in 0.35-μm TSMC process. The s-parameters of test structures are measured from 50MHz to 10GHz. The equivalent circuit model is proposed by hybrids of BSIM3 and the parasitic components. The parasitic components are extracted by optimizing the parameters using the measured DC and RF characteristics. Based on the extracted circuit models, the extracted parameters are verified by the analysis of variance.

AB - In this paper, the AC circuit model of multi-finger MOSFET for RF application is investigated. Test structures varying with the gate width and the number of fingers are fabricated in 0.35-μm TSMC process. The s-parameters of test structures are measured from 50MHz to 10GHz. The equivalent circuit model is proposed by hybrids of BSIM3 and the parasitic components. The parasitic components are extracted by optimizing the parameters using the measured DC and RF characteristics. Based on the extracted circuit models, the extracted parameters are verified by the analysis of variance.

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