Variability modeling of RF characteristics for multi-finger MOSFETs using statistical methods

Hyuck Sang Yim; Jung Han Kang; Ilgu Yun

doi:10.1109/IEMT.2008.5507890

Variability modeling of RF characteristics for multi-finger MOSFETs using statistical methods

Hyuck Sang Yim, Jung Han Kang, Ilgu Yun

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Conference article

1 Citation (Scopus)

Abstract

In this paper, the AC circuit model of multi-finger MOSFET for RF application is investigated. Test structures varying with the gate width and the number of fingers are fabricated in 0.35-μm TSMC process. The s-parameters of test structures are measured from 50MHz to 10GHz. The equivalent circuit model is proposed by hybrids of BSIM3 and the parasitic components. The parasitic components are extracted by optimizing the parameters using the measured DC and RF characteristics. Based on the extracted circuit models, the extracted parameters are verified by the analysis of variance.

Original language	English
Article number	5507890
Journal	Proceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium
DOIs	https://doi.org/10.1109/IEMT.2008.5507890
Publication status	Published - 2008 Dec 1
Event	2008 33rd IEEE/CPMT International Electronics Manufacturing Technology Conference, IEMT 2008 - Penang, Malaysia Duration: 2008 Nov 4 → 2008 Nov 6

All Science Journal Classification (ASJC) codes

Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

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10.1109/IEMT.2008.5507890

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Yim, H. S., Kang, J. H., & Yun, I. (2008). Variability modeling of RF characteristics for multi-finger MOSFETs using statistical methods. Proceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium, [5507890]. https://doi.org/10.1109/IEMT.2008.5507890

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abstract = "In this paper, the AC circuit model of multi-finger MOSFET for RF application is investigated. Test structures varying with the gate width and the number of fingers are fabricated in 0.35-μm TSMC process. The s-parameters of test structures are measured from 50MHz to 10GHz. The equivalent circuit model is proposed by hybrids of BSIM3 and the parasitic components. The parasitic components are extracted by optimizing the parameters using the measured DC and RF characteristics. Based on the extracted circuit models, the extracted parameters are verified by the analysis of variance.",

author = "Yim, {Hyuck Sang} and Kang, {Jung Han} and Ilgu Yun",

year = "2008",

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doi = "10.1109/IEMT.2008.5507890",

language = "English",

journal = "Proceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium",

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N2 - In this paper, the AC circuit model of multi-finger MOSFET for RF application is investigated. Test structures varying with the gate width and the number of fingers are fabricated in 0.35-μm TSMC process. The s-parameters of test structures are measured from 50MHz to 10GHz. The equivalent circuit model is proposed by hybrids of BSIM3 and the parasitic components. The parasitic components are extracted by optimizing the parameters using the measured DC and RF characteristics. Based on the extracted circuit models, the extracted parameters are verified by the analysis of variance.

AB - In this paper, the AC circuit model of multi-finger MOSFET for RF application is investigated. Test structures varying with the gate width and the number of fingers are fabricated in 0.35-μm TSMC process. The s-parameters of test structures are measured from 50MHz to 10GHz. The equivalent circuit model is proposed by hybrids of BSIM3 and the parasitic components. The parasitic components are extracted by optimizing the parameters using the measured DC and RF characteristics. Based on the extracted circuit models, the extracted parameters are verified by the analysis of variance.

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