Abstract
In this paper, the AC circuit model of multi-finger MOSFET for RF application is investigated. Test structures varying with the gate width and the number of fingers are fabricated in 0.35-μm TSMC process. The s-parameters of test structures are measured from 50MHz to 10GHz. The equivalent circuit model is proposed by hybrids of BSIM3 and the parasitic components. The parasitic components are extracted by optimizing the parameters using the measured DC and RF characteristics. Based on the extracted circuit models, the extracted parameters are verified by the analysis of variance.
| Original language | English |
|---|---|
| Article number | 5507890 |
| Journal | Proceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium |
| DOIs | |
| Publication status | Published - 2008 Dec 1 |
| Event | 2008 33rd IEEE/CPMT International Electronics Manufacturing Technology Conference, IEMT 2008 - Penang, Malaysia Duration: 2008 Nov 4 → 2008 Nov 6 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering
Cite this
}
Variability modeling of RF characteristics for multi-finger MOSFETs using statistical methods. / Yim, Hyuck Sang; Kang, Jung Han; Yun, Ilgu.
In: Proceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium, 01.12.2008.Research output: Contribution to journal › Conference article
TY - JOUR
T1 - Variability modeling of RF characteristics for multi-finger MOSFETs using statistical methods
AU - Yim, Hyuck Sang
AU - Kang, Jung Han
AU - Yun, Ilgu
PY - 2008/12/1
Y1 - 2008/12/1
N2 - In this paper, the AC circuit model of multi-finger MOSFET for RF application is investigated. Test structures varying with the gate width and the number of fingers are fabricated in 0.35-μm TSMC process. The s-parameters of test structures are measured from 50MHz to 10GHz. The equivalent circuit model is proposed by hybrids of BSIM3 and the parasitic components. The parasitic components are extracted by optimizing the parameters using the measured DC and RF characteristics. Based on the extracted circuit models, the extracted parameters are verified by the analysis of variance.
AB - In this paper, the AC circuit model of multi-finger MOSFET for RF application is investigated. Test structures varying with the gate width and the number of fingers are fabricated in 0.35-μm TSMC process. The s-parameters of test structures are measured from 50MHz to 10GHz. The equivalent circuit model is proposed by hybrids of BSIM3 and the parasitic components. The parasitic components are extracted by optimizing the parameters using the measured DC and RF characteristics. Based on the extracted circuit models, the extracted parameters are verified by the analysis of variance.
UR - http://www.scopus.com/inward/record.url?scp=77955115396&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77955115396&partnerID=8YFLogxK
U2 - 10.1109/IEMT.2008.5507890
DO - 10.1109/IEMT.2008.5507890
M3 - Conference article
AN - SCOPUS:77955115396
JO - Proceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium
JF - Proceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium
SN - 1089-8190
M1 - 5507890
ER -