The authors introduce variable liquid crystal (LC) pretilt angles via ion beam (IB) irradiation of silicon carbide (SiC) layers of various compositions. To control the composition of the SiC layer, the authors altered the rf power ratio between the graphite target and silicon target. The pretilt angle of the silicon-rich SiC layer was constant regardless of IB irradiation angle; however, the carbon-rich SiC layer showed variable pretilt angles, depending on IB irradiation angle. The authors attribute variable pretilt angle to the competition between van der Waals interactions, favoring the vertical alignment, and pi-pi interactions, favoring the LC alignment parallel to IB direction.
Bibliographical noteFunding Information:
This work was equally supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (Grant No. R01-2006-000-11066-0) and Samsung Electronics. The authors are supported by the Brain Korea 21 (BK 21) fellowship from the Ministry of Education of Korea.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)