Variable liquid crystal pretilt angles on various compositions of alignment layers

Jong Bok Kim; Kyung Chan Kim; Han Jin Ahn; Byoung Har Hwang; Dong Choon Hyun; Hong Koo Baik

doi:10.1063/1.2432272

Variable liquid crystal pretilt angles on various compositions of alignment layers

Jong Bok Kim, Kyung Chan Kim, Han Jin Ahn, Byoung Har Hwang, Dong Choon Hyun, Hong Koo Baik

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

59 Citations (Scopus)

Abstract

The authors introduce variable liquid crystal (LC) pretilt angles via ion beam (IB) irradiation of silicon carbide (SiC) layers of various compositions. To control the composition of the SiC layer, the authors altered the rf power ratio between the graphite target and silicon target. The pretilt angle of the silicon-rich SiC layer was constant regardless of IB irradiation angle; however, the carbon-rich SiC layer showed variable pretilt angles, depending on IB irradiation angle. The authors attribute variable pretilt angle to the competition between van der Waals interactions, favoring the vertical alignment, and pi-pi interactions, favoring the LC alignment parallel to IB direction.

Original language	English
Article number	043515
Journal	Applied Physics Letters
Volume	90
Issue number	4
DOIs	https://doi.org/10.1063/1.2432272
Publication status	Published - 2007

Bibliographical note

Funding Information:
This work was equally supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (Grant No. R01-2006-000-11066-0) and Samsung Electronics. The authors are supported by the Brain Korea 21 (BK 21) fellowship from the Ministry of Education of Korea.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2432272

Cite this

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title = "Variable liquid crystal pretilt angles on various compositions of alignment layers",

abstract = "The authors introduce variable liquid crystal (LC) pretilt angles via ion beam (IB) irradiation of silicon carbide (SiC) layers of various compositions. To control the composition of the SiC layer, the authors altered the rf power ratio between the graphite target and silicon target. The pretilt angle of the silicon-rich SiC layer was constant regardless of IB irradiation angle; however, the carbon-rich SiC layer showed variable pretilt angles, depending on IB irradiation angle. The authors attribute variable pretilt angle to the competition between van der Waals interactions, favoring the vertical alignment, and pi-pi interactions, favoring the LC alignment parallel to IB direction.",

author = "Kim, {Jong Bok} and Kim, {Kyung Chan} and Ahn, {Han Jin} and Hwang, {Byoung Har} and Hyun, {Dong Choon} and Baik, {Hong Koo}",

note = "Funding Information: This work was equally supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (Grant No. R01-2006-000-11066-0) and Samsung Electronics. The authors are supported by the Brain Korea 21 (BK 21) fellowship from the Ministry of Education of Korea.",

year = "2007",

doi = "10.1063/1.2432272",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

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AU - Kim, Jong Bok

AU - Kim, Kyung Chan

AU - Ahn, Han Jin

AU - Hwang, Byoung Har

AU - Hyun, Dong Choon

AU - Baik, Hong Koo

N1 - Funding Information: This work was equally supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (Grant No. R01-2006-000-11066-0) and Samsung Electronics. The authors are supported by the Brain Korea 21 (BK 21) fellowship from the Ministry of Education of Korea.

PY - 2007

Y1 - 2007

N2 - The authors introduce variable liquid crystal (LC) pretilt angles via ion beam (IB) irradiation of silicon carbide (SiC) layers of various compositions. To control the composition of the SiC layer, the authors altered the rf power ratio between the graphite target and silicon target. The pretilt angle of the silicon-rich SiC layer was constant regardless of IB irradiation angle; however, the carbon-rich SiC layer showed variable pretilt angles, depending on IB irradiation angle. The authors attribute variable pretilt angle to the competition between van der Waals interactions, favoring the vertical alignment, and pi-pi interactions, favoring the LC alignment parallel to IB direction.

AB - The authors introduce variable liquid crystal (LC) pretilt angles via ion beam (IB) irradiation of silicon carbide (SiC) layers of various compositions. To control the composition of the SiC layer, the authors altered the rf power ratio between the graphite target and silicon target. The pretilt angle of the silicon-rich SiC layer was constant regardless of IB irradiation angle; however, the carbon-rich SiC layer showed variable pretilt angles, depending on IB irradiation angle. The authors attribute variable pretilt angle to the competition between van der Waals interactions, favoring the vertical alignment, and pi-pi interactions, favoring the LC alignment parallel to IB direction.

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Variable liquid crystal pretilt angles on various compositions of alignment layers

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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