Abstract
In this paper we report on the thermal analysis of high-power light-emitting diodes (LEDs) as a function of input power. The transient thermal measurement method using structure function was employed to investigate the thermal behavior of LEDs at different working conditions. It was shown that a 5 W LED package installed with four chips exhibited an increase of thermal resistance from 7.06 K/W to 8.83 K/W with the input current ranging from 50 mA to 700 mA at the ambient temperature of 25 °C. However, the thermal resistance for a 1 W LED package with one chip was decreased from 20.33 K/W to 19.54 K/W with the input current ranging from 50 mA to 350 mA. Based on our improved LED model, the different trends for the two packages are attributed to the difference in the power dissipated by internal series electrical resistances.
| Original language | English |
|---|---|
| Pages (from-to) | 2187-2190 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Volume | 3 |
| DOIs | |
| Publication status | Published - 2006 Jul 31 |
| Event | 6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany Duration: 2005 Aug 28 → 2005 Sep 2 |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
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Variation of thermal resistance with input power in LEDs. / Yang, Lianqiao; Hu, Jianzheng; Kim, Lan; Shin, Moo Whan.
In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 3, 31.07.2006, p. 2187-2190.Research output: Contribution to journal › Conference article
TY - JOUR
T1 - Variation of thermal resistance with input power in LEDs
AU - Yang, Lianqiao
AU - Hu, Jianzheng
AU - Kim, Lan
AU - Shin, Moo Whan
PY - 2006/7/31
Y1 - 2006/7/31
N2 - In this paper we report on the thermal analysis of high-power light-emitting diodes (LEDs) as a function of input power. The transient thermal measurement method using structure function was employed to investigate the thermal behavior of LEDs at different working conditions. It was shown that a 5 W LED package installed with four chips exhibited an increase of thermal resistance from 7.06 K/W to 8.83 K/W with the input current ranging from 50 mA to 700 mA at the ambient temperature of 25 °C. However, the thermal resistance for a 1 W LED package with one chip was decreased from 20.33 K/W to 19.54 K/W with the input current ranging from 50 mA to 350 mA. Based on our improved LED model, the different trends for the two packages are attributed to the difference in the power dissipated by internal series electrical resistances.
AB - In this paper we report on the thermal analysis of high-power light-emitting diodes (LEDs) as a function of input power. The transient thermal measurement method using structure function was employed to investigate the thermal behavior of LEDs at different working conditions. It was shown that a 5 W LED package installed with four chips exhibited an increase of thermal resistance from 7.06 K/W to 8.83 K/W with the input current ranging from 50 mA to 700 mA at the ambient temperature of 25 °C. However, the thermal resistance for a 1 W LED package with one chip was decreased from 20.33 K/W to 19.54 K/W with the input current ranging from 50 mA to 350 mA. Based on our improved LED model, the different trends for the two packages are attributed to the difference in the power dissipated by internal series electrical resistances.
UR - http://www.scopus.com/inward/record.url?scp=33746383276&partnerID=8YFLogxK
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U2 - 10.1002/pssc.200565169
DO - 10.1002/pssc.200565169
M3 - Conference article
AN - SCOPUS:33746383276
VL - 3
SP - 2187
EP - 2190
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
SN - 1862-6351
ER -