Abstract
In this paper we report on the thermal analysis of high-power light-emitting diodes (LEDs) as a function of input power. The transient thermal measurement method using structure function was employed to investigate the thermal behavior of LEDs at different working conditions. It was shown that a 5 W LED package installed with four chips exhibited an increase of thermal resistance from 7.06 K/W to 8.83 K/W with the input current ranging from 50 mA to 700 mA at the ambient temperature of 25 °C. However, the thermal resistance for a 1 W LED package with one chip was decreased from 20.33 K/W to 19.54 K/W with the input current ranging from 50 mA to 350 mA. Based on our improved LED model, the different trends for the two packages are attributed to the difference in the power dissipated by internal series electrical resistances.
| Original language | English |
|---|---|
| Pages (from-to) | 2187-2190 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Volume | 3 |
| DOIs | |
| Publication status | Published - 2006 |
| Event | 6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany Duration: 2005 Aug 28 → 2005 Sep 2 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics