Variation of thermal resistance with input power in LEDs

Lianqiao Yang; Jianzheng Hu; Lan Kim; Moo Whan Shin

doi:10.1002/pssc.200565169

Variation of thermal resistance with input power in LEDs

Lianqiao Yang, Jianzheng Hu, Lan Kim, Moo Whan Shin

School of Integrated Technology

Research output: Contribution to journal › Conference article › peer-review

36 Citations (Scopus)

Abstract

In this paper we report on the thermal analysis of high-power light-emitting diodes (LEDs) as a function of input power. The transient thermal measurement method using structure function was employed to investigate the thermal behavior of LEDs at different working conditions. It was shown that a 5 W LED package installed with four chips exhibited an increase of thermal resistance from 7.06 K/W to 8.83 K/W with the input current ranging from 50 mA to 700 mA at the ambient temperature of 25 °C. However, the thermal resistance for a 1 W LED package with one chip was decreased from 20.33 K/W to 19.54 K/W with the input current ranging from 50 mA to 350 mA. Based on our improved LED model, the different trends for the two packages are attributed to the difference in the power dissipated by internal series electrical resistances.

Original language	English
Pages (from-to)	2187-2190
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	3
DOIs	https://doi.org/10.1002/pssc.200565169
Publication status	Published - 2006
Event	6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany Duration: 2005 Aug 28 → 2005 Sep 2

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

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10.1002/pssc.200565169

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title = "Variation of thermal resistance with input power in LEDs",

abstract = "In this paper we report on the thermal analysis of high-power light-emitting diodes (LEDs) as a function of input power. The transient thermal measurement method using structure function was employed to investigate the thermal behavior of LEDs at different working conditions. It was shown that a 5 W LED package installed with four chips exhibited an increase of thermal resistance from 7.06 K/W to 8.83 K/W with the input current ranging from 50 mA to 700 mA at the ambient temperature of 25 °C. However, the thermal resistance for a 1 W LED package with one chip was decreased from 20.33 K/W to 19.54 K/W with the input current ranging from 50 mA to 350 mA. Based on our improved LED model, the different trends for the two packages are attributed to the difference in the power dissipated by internal series electrical resistances.",

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AU - Yang, Lianqiao

AU - Hu, Jianzheng

AU - Kim, Lan

AU - Shin, Moo Whan

PY - 2006

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N2 - In this paper we report on the thermal analysis of high-power light-emitting diodes (LEDs) as a function of input power. The transient thermal measurement method using structure function was employed to investigate the thermal behavior of LEDs at different working conditions. It was shown that a 5 W LED package installed with four chips exhibited an increase of thermal resistance from 7.06 K/W to 8.83 K/W with the input current ranging from 50 mA to 700 mA at the ambient temperature of 25 °C. However, the thermal resistance for a 1 W LED package with one chip was decreased from 20.33 K/W to 19.54 K/W with the input current ranging from 50 mA to 350 mA. Based on our improved LED model, the different trends for the two packages are attributed to the difference in the power dissipated by internal series electrical resistances.

AB - In this paper we report on the thermal analysis of high-power light-emitting diodes (LEDs) as a function of input power. The transient thermal measurement method using structure function was employed to investigate the thermal behavior of LEDs at different working conditions. It was shown that a 5 W LED package installed with four chips exhibited an increase of thermal resistance from 7.06 K/W to 8.83 K/W with the input current ranging from 50 mA to 700 mA at the ambient temperature of 25 °C. However, the thermal resistance for a 1 W LED package with one chip was decreased from 20.33 K/W to 19.54 K/W with the input current ranging from 50 mA to 350 mA. Based on our improved LED model, the different trends for the two packages are attributed to the difference in the power dissipated by internal series electrical resistances.

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