Variation-tolerant sensing circuit for ultralow-voltage operation of spin-torque transfer magnetic RAM

Kangwook Jo, Hongil Yoon

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Although promising as a future memory solution, the spin-torque transfer magnetic RAM has critical drawbacks due to the small operation margin in low supply voltage and large area of the sensing circuit. To overcome these disadvantages, we propose a novel sensing circuit that utilizes the data-dependent body-bias scheme with a single reference cell. Through Monte Carlo simulations using 45-nm process technology model parameters, the proposed circuit is verified to be highly robust to the variations in threshold voltage and cell resistance at ultralow supply voltages without sensing speed degradation. The proposed circuit has a read access pass yield of 96.5% for 16-Mb memory at VDD = 0.7V when the standard deviation of cell resistance is 10%. In addition, the area overhead is also reduced by 79% compared to the conventional sensing circuit.

Original languageEnglish
Article number7492291
Pages (from-to)570-574
Number of pages5
JournalIEEE Transactions on Circuits and Systems II: Express Briefs
Volume64
Issue number5
DOIs
Publication statusPublished - 2017 May 1

Fingerprint

Random access storage
Torque
Networks (circuits)
Electric potential
Data storage equipment
Threshold voltage
Degradation

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

@article{b6c7c50d5e61436096f3372d9b6bb50e,
title = "Variation-tolerant sensing circuit for ultralow-voltage operation of spin-torque transfer magnetic RAM",
abstract = "Although promising as a future memory solution, the spin-torque transfer magnetic RAM has critical drawbacks due to the small operation margin in low supply voltage and large area of the sensing circuit. To overcome these disadvantages, we propose a novel sensing circuit that utilizes the data-dependent body-bias scheme with a single reference cell. Through Monte Carlo simulations using 45-nm process technology model parameters, the proposed circuit is verified to be highly robust to the variations in threshold voltage and cell resistance at ultralow supply voltages without sensing speed degradation. The proposed circuit has a read access pass yield of 96.5{\%} for 16-Mb memory at VDD = 0.7V when the standard deviation of cell resistance is 10{\%}. In addition, the area overhead is also reduced by 79{\%} compared to the conventional sensing circuit.",
author = "Kangwook Jo and Hongil Yoon",
year = "2017",
month = "5",
day = "1",
doi = "10.1109/TCSII.2016.2581038",
language = "English",
volume = "64",
pages = "570--574",
journal = "IEEE Transactions on Circuits and Systems II: Express Briefs",
issn = "1549-7747",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "5",

}

Variation-tolerant sensing circuit for ultralow-voltage operation of spin-torque transfer magnetic RAM. / Jo, Kangwook; Yoon, Hongil.

In: IEEE Transactions on Circuits and Systems II: Express Briefs, Vol. 64, No. 5, 7492291, 01.05.2017, p. 570-574.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Variation-tolerant sensing circuit for ultralow-voltage operation of spin-torque transfer magnetic RAM

AU - Jo, Kangwook

AU - Yoon, Hongil

PY - 2017/5/1

Y1 - 2017/5/1

N2 - Although promising as a future memory solution, the spin-torque transfer magnetic RAM has critical drawbacks due to the small operation margin in low supply voltage and large area of the sensing circuit. To overcome these disadvantages, we propose a novel sensing circuit that utilizes the data-dependent body-bias scheme with a single reference cell. Through Monte Carlo simulations using 45-nm process technology model parameters, the proposed circuit is verified to be highly robust to the variations in threshold voltage and cell resistance at ultralow supply voltages without sensing speed degradation. The proposed circuit has a read access pass yield of 96.5% for 16-Mb memory at VDD = 0.7V when the standard deviation of cell resistance is 10%. In addition, the area overhead is also reduced by 79% compared to the conventional sensing circuit.

AB - Although promising as a future memory solution, the spin-torque transfer magnetic RAM has critical drawbacks due to the small operation margin in low supply voltage and large area of the sensing circuit. To overcome these disadvantages, we propose a novel sensing circuit that utilizes the data-dependent body-bias scheme with a single reference cell. Through Monte Carlo simulations using 45-nm process technology model parameters, the proposed circuit is verified to be highly robust to the variations in threshold voltage and cell resistance at ultralow supply voltages without sensing speed degradation. The proposed circuit has a read access pass yield of 96.5% for 16-Mb memory at VDD = 0.7V when the standard deviation of cell resistance is 10%. In addition, the area overhead is also reduced by 79% compared to the conventional sensing circuit.

UR - http://www.scopus.com/inward/record.url?scp=85018865645&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85018865645&partnerID=8YFLogxK

U2 - 10.1109/TCSII.2016.2581038

DO - 10.1109/TCSII.2016.2581038

M3 - Article

VL - 64

SP - 570

EP - 574

JO - IEEE Transactions on Circuits and Systems II: Express Briefs

JF - IEEE Transactions on Circuits and Systems II: Express Briefs

SN - 1549-7747

IS - 5

M1 - 7492291

ER -