We investigated various approaches to enhance the electrical performance and stability of oxide thin-film transistors (TFTs) fabricated with vacuum- and solution-process: vertically graded oxygen vacancy active layer (VGA) by control of oxygen partial pressure, sequential pressure annealing (SPA), and hydrogen peroxide activation (HPA) using ultraviolet irradiation. By adopting these techniques, we could effectively control the defect densities in active layer which resulted in high performance and stable oxide TFTs.
|Title of host publication||Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices|
|Subtitle of host publication||TFT Technologies and FPD Materials|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|Number of pages||4|
|Publication status||Published - 2015 Jul 30|
|Event||22nd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2015 - Kyoto, Japan|
Duration: 2015 Jul 1 → 2015 Jul 4
|Name||Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials|
|Other||22nd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2015|
|Period||15/7/1 → 15/7/4|
Bibliographical notePublisher Copyright:
© 2015 JSAP.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering