Versatile hole injection of VO2: Energy level alignment at N,N′-di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine/VO2/fluorine-doped tin oxide

Hyein Kim, Jeihyun Lee, Soohyung Park, Junkyeong Jeong, Dongguen Shin, Yeonjin Yi, Jung Dae Kwon, Jin Seong Park

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Energy level alignments at the interface of N,N′-di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (NPB)/VO2/fluorine-doped tin oxide (FTO) were studied by photoemission spectroscopy. The overall hole injection barrier between FTO and NPB was reduced from 1.38 to 0.59 eV with the insertion of a VO2 hole injection layer. This could allow direct hole injection from FTO to NPB through a shallow valence band of VO2. Surprisingly, VO2 can also act as a charge generation layer due to its small band gap of 0.80 eV. That is, its conduction band is quite close to the Fermi level, and thus electrons can be extracted from the highest occupied molecular orbital (HOMO) of NPB, which is equivalent to hole injection into the NPB HOMO.

Original languageEnglish
Pages (from-to)133-138
Number of pages6
JournalOrganic Electronics
Volume16
DOIs
Publication statusPublished - 2015 Jan

Fingerprint

Diamines
Fluorine
diamines
Tin oxides
Electron energy levels
tin oxides
fluorine
energy levels
alignment
Molecular orbitals
injection
molecular orbitals
Photoelectron spectroscopy
Valence bands
Fermi level
Conduction bands
Energy gap
insertion
conduction bands
photoelectric emission

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Kim, Hyein ; Lee, Jeihyun ; Park, Soohyung ; Jeong, Junkyeong ; Shin, Dongguen ; Yi, Yeonjin ; Kwon, Jung Dae ; Park, Jin Seong. / Versatile hole injection of VO2 : Energy level alignment at N,N′-di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine/VO2/fluorine-doped tin oxide. In: Organic Electronics. 2015 ; Vol. 16. pp. 133-138.
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abstract = "Energy level alignments at the interface of N,N′-di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (NPB)/VO2/fluorine-doped tin oxide (FTO) were studied by photoemission spectroscopy. The overall hole injection barrier between FTO and NPB was reduced from 1.38 to 0.59 eV with the insertion of a VO2 hole injection layer. This could allow direct hole injection from FTO to NPB through a shallow valence band of VO2. Surprisingly, VO2 can also act as a charge generation layer due to its small band gap of 0.80 eV. That is, its conduction band is quite close to the Fermi level, and thus electrons can be extracted from the highest occupied molecular orbital (HOMO) of NPB, which is equivalent to hole injection into the NPB HOMO.",
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Versatile hole injection of VO2 : Energy level alignment at N,N′-di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine/VO2/fluorine-doped tin oxide. / Kim, Hyein; Lee, Jeihyun; Park, Soohyung; Jeong, Junkyeong; Shin, Dongguen; Yi, Yeonjin; Kwon, Jung Dae; Park, Jin Seong.

In: Organic Electronics, Vol. 16, 01.2015, p. 133-138.

Research output: Contribution to journalArticle

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T2 - Energy level alignment at N,N′-di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine/VO2/fluorine-doped tin oxide

AU - Kim, Hyein

AU - Lee, Jeihyun

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AU - Jeong, Junkyeong

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AU - Yi, Yeonjin

AU - Kwon, Jung Dae

AU - Park, Jin Seong

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N2 - Energy level alignments at the interface of N,N′-di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (NPB)/VO2/fluorine-doped tin oxide (FTO) were studied by photoemission spectroscopy. The overall hole injection barrier between FTO and NPB was reduced from 1.38 to 0.59 eV with the insertion of a VO2 hole injection layer. This could allow direct hole injection from FTO to NPB through a shallow valence band of VO2. Surprisingly, VO2 can also act as a charge generation layer due to its small band gap of 0.80 eV. That is, its conduction band is quite close to the Fermi level, and thus electrons can be extracted from the highest occupied molecular orbital (HOMO) of NPB, which is equivalent to hole injection into the NPB HOMO.

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