Versatile hole injection of VO2: Energy level alignment at N,N′-di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine/VO2/fluorine-doped tin oxide

Hyein Kim; Jeihyun Lee; Soohyung Park; Junkyeong Jeong; Dongguen Shin; Yeonjin Yi; Jung Dae Kwon; Jin Seong Park

doi:10.1016/j.orgel.2014.10.044

Versatile hole injection of VO₂: Energy level alignment at N,N′-di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine/VO₂/fluorine-doped tin oxide

Hyein Kim, Jeihyun Lee, Soohyung Park, Junkyeong Jeong, Dongguen Shin, Yeonjin Yi, Jung Dae Kwon, Jin Seong Park

Department of Physics

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Energy level alignments at the interface of N,N′-di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (NPB)/VO₂/fluorine-doped tin oxide (FTO) were studied by photoemission spectroscopy. The overall hole injection barrier between FTO and NPB was reduced from 1.38 to 0.59 eV with the insertion of a VO₂ hole injection layer. This could allow direct hole injection from FTO to NPB through a shallow valence band of VO₂. Surprisingly, VO₂ can also act as a charge generation layer due to its small band gap of 0.80 eV. That is, its conduction band is quite close to the Fermi level, and thus electrons can be extracted from the highest occupied molecular orbital (HOMO) of NPB, which is equivalent to hole injection into the NPB HOMO.

Original language	English
Pages (from-to)	133-138
Number of pages	6
Journal	Organic Electronics
Volume	16
DOIs	https://doi.org/10.1016/j.orgel.2014.10.044
Publication status	Published - 2015 Jan

Bibliographical note

Funding Information:
This work was supported by the research project of the National Research Foundation of Korea (Grant No. 2013R1A1A1004778 and 2012M3A7B4049801 ) and Samsung Display Company .

Publisher Copyright:
© 2014 Elsevier B.V. All rights reserved.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Biomaterials
Chemistry(all)
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Access to Document

10.1016/j.orgel.2014.10.044

Cite this

@article{dda37f15e093433e8d0a58445dded2ef,

title = "Versatile hole injection of VO2: Energy level alignment at N,N′-di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine/VO2/fluorine-doped tin oxide",

abstract = "Energy level alignments at the interface of N,N′-di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (NPB)/VO2/fluorine-doped tin oxide (FTO) were studied by photoemission spectroscopy. The overall hole injection barrier between FTO and NPB was reduced from 1.38 to 0.59 eV with the insertion of a VO2 hole injection layer. This could allow direct hole injection from FTO to NPB through a shallow valence band of VO2. Surprisingly, VO2 can also act as a charge generation layer due to its small band gap of 0.80 eV. That is, its conduction band is quite close to the Fermi level, and thus electrons can be extracted from the highest occupied molecular orbital (HOMO) of NPB, which is equivalent to hole injection into the NPB HOMO.",

author = "Hyein Kim and Jeihyun Lee and Soohyung Park and Junkyeong Jeong and Dongguen Shin and Yeonjin Yi and Kwon, {Jung Dae} and Park, {Jin Seong}",

note = "Funding Information: This work was supported by the research project of the National Research Foundation of Korea (Grant No. 2013R1A1A1004778 and 2012M3A7B4049801 ) and Samsung Display Company . Publisher Copyright: {\textcopyright} 2014 Elsevier B.V. All rights reserved.",

year = "2015",

month = jan,

doi = "10.1016/j.orgel.2014.10.044",

language = "English",

volume = "16",

pages = "133--138",

journal = "Organic Electronics: physics, materials, applications",

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T1 - Versatile hole injection of VO2

T2 - Energy level alignment at N,N′-di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine/VO2/fluorine-doped tin oxide

AU - Kim, Hyein

AU - Lee, Jeihyun

AU - Park, Soohyung

AU - Jeong, Junkyeong

AU - Shin, Dongguen

AU - Yi, Yeonjin

AU - Kwon, Jung Dae

AU - Park, Jin Seong

N1 - Funding Information: This work was supported by the research project of the National Research Foundation of Korea (Grant No. 2013R1A1A1004778 and 2012M3A7B4049801 ) and Samsung Display Company . Publisher Copyright: © 2014 Elsevier B.V. All rights reserved.

PY - 2015/1

Y1 - 2015/1

N2 - Energy level alignments at the interface of N,N′-di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (NPB)/VO2/fluorine-doped tin oxide (FTO) were studied by photoemission spectroscopy. The overall hole injection barrier between FTO and NPB was reduced from 1.38 to 0.59 eV with the insertion of a VO2 hole injection layer. This could allow direct hole injection from FTO to NPB through a shallow valence band of VO2. Surprisingly, VO2 can also act as a charge generation layer due to its small band gap of 0.80 eV. That is, its conduction band is quite close to the Fermi level, and thus electrons can be extracted from the highest occupied molecular orbital (HOMO) of NPB, which is equivalent to hole injection into the NPB HOMO.

AB - Energy level alignments at the interface of N,N′-di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (NPB)/VO2/fluorine-doped tin oxide (FTO) were studied by photoemission spectroscopy. The overall hole injection barrier between FTO and NPB was reduced from 1.38 to 0.59 eV with the insertion of a VO2 hole injection layer. This could allow direct hole injection from FTO to NPB through a shallow valence band of VO2. Surprisingly, VO2 can also act as a charge generation layer due to its small band gap of 0.80 eV. That is, its conduction band is quite close to the Fermi level, and thus electrons can be extracted from the highest occupied molecular orbital (HOMO) of NPB, which is equivalent to hole injection into the NPB HOMO.

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