Vertical alignment of liquid crystals on a fully oxidized HfO2 surface by ion bombardment

Won Kyu Lee, Byeong Yun Oh, Ji Hun Lim, Hong Gyu Park, Byoung Yong Kim, Hyun Jae Na, Dae Shik Seo

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

High-performance liquid crystals (LCs) driven at a 0.9 V threshold were demonstrated on very thin HfO2 films with vertical (homeotropic) alignment by ion bombardment. Atomic layer deposition was used to obtain LC orientation on ultrathin high-quality films of double-layer HfO2 / Al2 O3. X-ray photoelectron spectroscopy indicated that full oxidization of HfO2 film surfaces was induced by ion bombardment, shifting the Hf 4f spectra to lower binding energies. The increased intensities of the Hf 4f peaks after ion bombardment confirmed that nonstoichiometric HfOx was converted to the fully oxidized HfO2 surfaces.

Original languageEnglish
Article number223507
JournalApplied Physics Letters
Volume94
Issue number22
DOIs
Publication statusPublished - 2009 Jun 15

Fingerprint

bombardment
liquid crystals
alignment
ions
atomic layer epitaxy
binding energy
photoelectron spectroscopy
thresholds
thin films
x rays

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Lee, Won Kyu ; Oh, Byeong Yun ; Lim, Ji Hun ; Park, Hong Gyu ; Kim, Byoung Yong ; Na, Hyun Jae ; Seo, Dae Shik. / Vertical alignment of liquid crystals on a fully oxidized HfO2 surface by ion bombardment. In: Applied Physics Letters. 2009 ; Vol. 94, No. 22.
@article{578f1054769f408da78b46b401455546,
title = "Vertical alignment of liquid crystals on a fully oxidized HfO2 surface by ion bombardment",
abstract = "High-performance liquid crystals (LCs) driven at a 0.9 V threshold were demonstrated on very thin HfO2 films with vertical (homeotropic) alignment by ion bombardment. Atomic layer deposition was used to obtain LC orientation on ultrathin high-quality films of double-layer HfO2 / Al2 O3. X-ray photoelectron spectroscopy indicated that full oxidization of HfO2 film surfaces was induced by ion bombardment, shifting the Hf 4f spectra to lower binding energies. The increased intensities of the Hf 4f peaks after ion bombardment confirmed that nonstoichiometric HfOx was converted to the fully oxidized HfO2 surfaces.",
author = "Lee, {Won Kyu} and Oh, {Byeong Yun} and Lim, {Ji Hun} and Park, {Hong Gyu} and Kim, {Byoung Yong} and Na, {Hyun Jae} and Seo, {Dae Shik}",
year = "2009",
month = "6",
day = "15",
doi = "10.1063/1.3126961",
language = "English",
volume = "94",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "22",

}

Vertical alignment of liquid crystals on a fully oxidized HfO2 surface by ion bombardment. / Lee, Won Kyu; Oh, Byeong Yun; Lim, Ji Hun; Park, Hong Gyu; Kim, Byoung Yong; Na, Hyun Jae; Seo, Dae Shik.

In: Applied Physics Letters, Vol. 94, No. 22, 223507, 15.06.2009.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Vertical alignment of liquid crystals on a fully oxidized HfO2 surface by ion bombardment

AU - Lee, Won Kyu

AU - Oh, Byeong Yun

AU - Lim, Ji Hun

AU - Park, Hong Gyu

AU - Kim, Byoung Yong

AU - Na, Hyun Jae

AU - Seo, Dae Shik

PY - 2009/6/15

Y1 - 2009/6/15

N2 - High-performance liquid crystals (LCs) driven at a 0.9 V threshold were demonstrated on very thin HfO2 films with vertical (homeotropic) alignment by ion bombardment. Atomic layer deposition was used to obtain LC orientation on ultrathin high-quality films of double-layer HfO2 / Al2 O3. X-ray photoelectron spectroscopy indicated that full oxidization of HfO2 film surfaces was induced by ion bombardment, shifting the Hf 4f spectra to lower binding energies. The increased intensities of the Hf 4f peaks after ion bombardment confirmed that nonstoichiometric HfOx was converted to the fully oxidized HfO2 surfaces.

AB - High-performance liquid crystals (LCs) driven at a 0.9 V threshold were demonstrated on very thin HfO2 films with vertical (homeotropic) alignment by ion bombardment. Atomic layer deposition was used to obtain LC orientation on ultrathin high-quality films of double-layer HfO2 / Al2 O3. X-ray photoelectron spectroscopy indicated that full oxidization of HfO2 film surfaces was induced by ion bombardment, shifting the Hf 4f spectra to lower binding energies. The increased intensities of the Hf 4f peaks after ion bombardment confirmed that nonstoichiometric HfOx was converted to the fully oxidized HfO2 surfaces.

UR - http://www.scopus.com/inward/record.url?scp=66749107341&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=66749107341&partnerID=8YFLogxK

U2 - 10.1063/1.3126961

DO - 10.1063/1.3126961

M3 - Article

AN - SCOPUS:66749107341

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 22

M1 - 223507

ER -