Vertical and In-Plane Current Devices Using NbS2/n-MoS2 van der Waals Schottky Junction and Graphene Contact

Hyung Gon Shin, Hyong Seo Yoon, Jin Sung Kim, Minju Kim, June Yeong Lim, Sanghyuck Yu, Ji Hoon Park, Yeonjin Yi, Taekyeong Kim, Seong Chan Jun, Seongil Im

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

A van der Waals (vdW) Schottky junction between two-dimensional (2D) transition metal dichalcogenides (TMDs) is introduced here for both vertical and in-plane current devices: Schottky diodes and metal semiconductor field-effect transistors (MESFETs). The Schottky barrier between conducting NbS2 and semiconducting n-MoS2 appeared to be as large as ∼0.5 eV due to their work-function difference. While the Schottky diode shows an ideality factor of 1.8-4.0 with an on-to-off current ratio of 103-105, Schottky-effect MESFET displays little gate hysteresis and an ideal subthreshold swing of 60-80 mV/dec due to low-density traps at the vdW interface. All MESFETs operate with a low threshold gate voltage of -0.5 ∼ -1 V, exhibiting easy saturation. It was also found that the device mobility is significantly dependent on the condition of source/drain (S/D) contact for n-channel MoS2. The highest room temperature mobility in MESFET reaches to approximately more than 800 cm2/V s with graphene S/D contact. The NbS2/n-MoS2 MESFET with graphene was successfully integrated into an organic piezoelectric touch sensor circuit with green OLED indicator, exploiting its predictable small threshold voltage, while NbS2/n-MoS2 Schottky diodes with graphene were applied to extract doping concentrations in MoS2 channel.

Original languageEnglish
Pages (from-to)1937-1945
Number of pages9
JournalNano letters
Volume18
Issue number3
DOIs
Publication statusPublished - 2018 Mar 14

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MESFET devices
Graphite
Graphene
graphene
field effect transistors
Schottky diodes
Diodes
metals
threshold gates
touch
Organic light emitting diodes (OLED)
Threshold voltage
threshold voltage
Transition metals
Hysteresis
transition metals
hysteresis
Doping (additives)
traps
saturation

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Shin, Hyung Gon ; Yoon, Hyong Seo ; Kim, Jin Sung ; Kim, Minju ; Lim, June Yeong ; Yu, Sanghyuck ; Park, Ji Hoon ; Yi, Yeonjin ; Kim, Taekyeong ; Jun, Seong Chan ; Im, Seongil. / Vertical and In-Plane Current Devices Using NbS2/n-MoS2 van der Waals Schottky Junction and Graphene Contact. In: Nano letters. 2018 ; Vol. 18, No. 3. pp. 1937-1945.
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abstract = "A van der Waals (vdW) Schottky junction between two-dimensional (2D) transition metal dichalcogenides (TMDs) is introduced here for both vertical and in-plane current devices: Schottky diodes and metal semiconductor field-effect transistors (MESFETs). The Schottky barrier between conducting NbS2 and semiconducting n-MoS2 appeared to be as large as ∼0.5 eV due to their work-function difference. While the Schottky diode shows an ideality factor of 1.8-4.0 with an on-to-off current ratio of 103-105, Schottky-effect MESFET displays little gate hysteresis and an ideal subthreshold swing of 60-80 mV/dec due to low-density traps at the vdW interface. All MESFETs operate with a low threshold gate voltage of -0.5 ∼ -1 V, exhibiting easy saturation. It was also found that the device mobility is significantly dependent on the condition of source/drain (S/D) contact for n-channel MoS2. The highest room temperature mobility in MESFET reaches to approximately more than 800 cm2/V s with graphene S/D contact. The NbS2/n-MoS2 MESFET with graphene was successfully integrated into an organic piezoelectric touch sensor circuit with green OLED indicator, exploiting its predictable small threshold voltage, while NbS2/n-MoS2 Schottky diodes with graphene were applied to extract doping concentrations in MoS2 channel.",
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Vertical and In-Plane Current Devices Using NbS2/n-MoS2 van der Waals Schottky Junction and Graphene Contact. / Shin, Hyung Gon; Yoon, Hyong Seo; Kim, Jin Sung; Kim, Minju; Lim, June Yeong; Yu, Sanghyuck; Park, Ji Hoon; Yi, Yeonjin; Kim, Taekyeong; Jun, Seong Chan; Im, Seongil.

In: Nano letters, Vol. 18, No. 3, 14.03.2018, p. 1937-1945.

Research output: Contribution to journalArticle

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T1 - Vertical and In-Plane Current Devices Using NbS2/n-MoS2 van der Waals Schottky Junction and Graphene Contact

AU - Shin, Hyung Gon

AU - Yoon, Hyong Seo

AU - Kim, Jin Sung

AU - Kim, Minju

AU - Lim, June Yeong

AU - Yu, Sanghyuck

AU - Park, Ji Hoon

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AU - Kim, Taekyeong

AU - Jun, Seong Chan

AU - Im, Seongil

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N2 - A van der Waals (vdW) Schottky junction between two-dimensional (2D) transition metal dichalcogenides (TMDs) is introduced here for both vertical and in-plane current devices: Schottky diodes and metal semiconductor field-effect transistors (MESFETs). The Schottky barrier between conducting NbS2 and semiconducting n-MoS2 appeared to be as large as ∼0.5 eV due to their work-function difference. While the Schottky diode shows an ideality factor of 1.8-4.0 with an on-to-off current ratio of 103-105, Schottky-effect MESFET displays little gate hysteresis and an ideal subthreshold swing of 60-80 mV/dec due to low-density traps at the vdW interface. All MESFETs operate with a low threshold gate voltage of -0.5 ∼ -1 V, exhibiting easy saturation. It was also found that the device mobility is significantly dependent on the condition of source/drain (S/D) contact for n-channel MoS2. The highest room temperature mobility in MESFET reaches to approximately more than 800 cm2/V s with graphene S/D contact. The NbS2/n-MoS2 MESFET with graphene was successfully integrated into an organic piezoelectric touch sensor circuit with green OLED indicator, exploiting its predictable small threshold voltage, while NbS2/n-MoS2 Schottky diodes with graphene were applied to extract doping concentrations in MoS2 channel.

AB - A van der Waals (vdW) Schottky junction between two-dimensional (2D) transition metal dichalcogenides (TMDs) is introduced here for both vertical and in-plane current devices: Schottky diodes and metal semiconductor field-effect transistors (MESFETs). The Schottky barrier between conducting NbS2 and semiconducting n-MoS2 appeared to be as large as ∼0.5 eV due to their work-function difference. While the Schottky diode shows an ideality factor of 1.8-4.0 with an on-to-off current ratio of 103-105, Schottky-effect MESFET displays little gate hysteresis and an ideal subthreshold swing of 60-80 mV/dec due to low-density traps at the vdW interface. All MESFETs operate with a low threshold gate voltage of -0.5 ∼ -1 V, exhibiting easy saturation. It was also found that the device mobility is significantly dependent on the condition of source/drain (S/D) contact for n-channel MoS2. The highest room temperature mobility in MESFET reaches to approximately more than 800 cm2/V s with graphene S/D contact. The NbS2/n-MoS2 MESFET with graphene was successfully integrated into an organic piezoelectric touch sensor circuit with green OLED indicator, exploiting its predictable small threshold voltage, while NbS2/n-MoS2 Schottky diodes with graphene were applied to extract doping concentrations in MoS2 channel.

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