Vertical field effect tunneling transistor based on graphene-ultrathin Si nanomembrane heterostructures

Tanmoy Das, Houk Jang, Jae Bok Lee, Hyunwoo Chu, Seong Dae Kim, Jong Hyun Ahn

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Graphene-based heterostructured vertical transistors have attracted a great deal of research interest. Herein we propose a Si-based technology platform for creating graphene/ultrathin semiconductor/ metal (GSM) junctions, which can be applied to large-scale and low-power electronics compatible with a variety of substrates.We fabricated graphene/Si nanomembrane (NM)/metal vertical heterostructures by using a dry transfer technique to transfer Si NMs onto chemical vapor depositiongrown graphene layers. The resulting van der Waals interfaces between graphene and p-Si NMs exhibited nearly ideal Schottky barrier behavior. Due to the low density of states of graphene, the graphene/Si NM Schottky barrier height can be modulated by modulating the band profile in the channel region, yielding well-defined current modulation.We obtained a maximum current on/off ratio (Ion/Ioff) of up to ~103, with a current density of 102 A cm-2.We also observed significant dependence of Schottky barrier height Δφb on the thickness of the Si NMs.We confirmed that the transport in these devices is dominated by the effects of the graphene/Si NM Schottky barrier.

Original languageEnglish
Article number044006
Journal2D Materials
Volume2
Issue number4
DOIs
Publication statusPublished - 2015 Nov 2

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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