Vertical growth of Mn:Ge nanowires and their magnetic properties

Ungkil Kim; Tae Eon Park; Il Soo Kim; Han Kyu Seong; Myuong Ha Kim; Yong Hee Park; Joonyeon Chang; Jae Gwan Park; Heon Jin Choi

doi:10.1109/INEC.2010.5424969

Vertical growth of Mn:Ge nanowires and their magnetic properties

Ungkil Kim, Tae Eon Park, Il Soo Kim, Han Kyu Seong, Myuong Ha Kim, Yong Hee Park, Joonyeon Chang, Jae Gwan Park, Heon Jin Choi

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report on synthesis of Mn-doped Ge nanowires and their magnetic and electrical properties. The vertically aligned Mn:Ge nanowires wer grown on the germanium substrate by vapor-liquid-solid mechanism using Au as catalyst and GeCl₄ and MnCl₂ as precursor. Anomalous X-ray scattering measurement makes it clear that Mn atoms are substitutionally incorporated with the diamond network of host Ge sites. Also X-ray magnetic circular dichroism spectra at Mn L_2,3-edges showed that doped Mn has local spin moment with the 3d⁵ electronic configuration above room temperature, meaning that the ferromagnetism originates from doped Mn²⁺ ions.

Original language	English
Title of host publication	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages	1169-1170
Number of pages	2
DOIs	https://doi.org/10.1109/INEC.2010.5424969
Publication status	Published - 2010 May 5
Event	2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China Duration: 2010 Jan 3 → 2010 Jan 8

Publication series

Name	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Other

Other	2010 3rd International Nanoelectronics Conference, INEC 2010
Country	China
City	Hongkong
Period	10/1/3 → 10/1/8

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/INEC.2010.5424969

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Kim, U., Park, T. E., Kim, I. S., Seong, H. K., Kim, M. H., Park, Y. H., Chang, J., Park, J. G., & Choi, H. J. (2010). Vertical growth of Mn:Ge nanowires and their magnetic properties. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 1169-1170). [5424969] (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5424969

Kim, Ungkil ; Park, Tae Eon ; Kim, Il Soo ; Seong, Han Kyu ; Kim, Myuong Ha ; Park, Yong Hee ; Chang, Joonyeon ; Park, Jae Gwan ; Choi, Heon Jin. / Vertical growth of Mn:Ge nanowires and their magnetic properties. INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. pp. 1169-1170 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).

@inproceedings{61393e577fa64d13bd21deb9c63160c7,

title = "Vertical growth of Mn:Ge nanowires and their magnetic properties",

abstract = "We report on synthesis of Mn-doped Ge nanowires and their magnetic and electrical properties. The vertically aligned Mn:Ge nanowires wer grown on the germanium substrate by vapor-liquid-solid mechanism using Au as catalyst and GeCl4 and MnCl2 as precursor. Anomalous X-ray scattering measurement makes it clear that Mn atoms are substitutionally incorporated with the diamond network of host Ge sites. Also X-ray magnetic circular dichroism spectra at Mn L2,3-edges showed that doped Mn has local spin moment with the 3d5 electronic configuration above room temperature, meaning that the ferromagnetism originates from doped Mn2+ ions.",

author = "Ungkil Kim and Park, {Tae Eon} and Kim, {Il Soo} and Seong, {Han Kyu} and Kim, {Myuong Ha} and Park, {Yong Hee} and Joonyeon Chang and Park, {Jae Gwan} and Choi, {Heon Jin}",

year = "2010",

month = may,

day = "5",

doi = "10.1109/INEC.2010.5424969",

language = "English",

isbn = "9781424435449",

series = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

pages = "1169--1170",

booktitle = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

note = "2010 3rd International Nanoelectronics Conference, INEC 2010 ; Conference date: 03-01-2010 Through 08-01-2010",

}

Kim, U, Park, TE, Kim, IS, Seong, HK, Kim, MH, Park, YH, Chang, J, Park, JG & Choi, HJ 2010, Vertical growth of Mn:Ge nanowires and their magnetic properties. in INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings., 5424969, INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings, pp. 1169-1170, 2010 3rd International Nanoelectronics Conference, INEC 2010, Hongkong, China, 10/1/3. https://doi.org/10.1109/INEC.2010.5424969

Vertical growth of Mn:Ge nanowires and their magnetic properties. / Kim, Ungkil; Park, Tae Eon; Kim, Il Soo; Seong, Han Kyu; Kim, Myuong Ha; Park, Yong Hee; Chang, Joonyeon; Park, Jae Gwan; Choi, Heon Jin.

INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 1169-1170 5424969 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Kim, Ungkil

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AU - Seong, Han Kyu

AU - Kim, Myuong Ha

AU - Park, Yong Hee

AU - Chang, Joonyeon

AU - Park, Jae Gwan

AU - Choi, Heon Jin

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N2 - We report on synthesis of Mn-doped Ge nanowires and their magnetic and electrical properties. The vertically aligned Mn:Ge nanowires wer grown on the germanium substrate by vapor-liquid-solid mechanism using Au as catalyst and GeCl4 and MnCl2 as precursor. Anomalous X-ray scattering measurement makes it clear that Mn atoms are substitutionally incorporated with the diamond network of host Ge sites. Also X-ray magnetic circular dichroism spectra at Mn L2,3-edges showed that doped Mn has local spin moment with the 3d5 electronic configuration above room temperature, meaning that the ferromagnetism originates from doped Mn2+ ions.

AB - We report on synthesis of Mn-doped Ge nanowires and their magnetic and electrical properties. The vertically aligned Mn:Ge nanowires wer grown on the germanium substrate by vapor-liquid-solid mechanism using Au as catalyst and GeCl4 and MnCl2 as precursor. Anomalous X-ray scattering measurement makes it clear that Mn atoms are substitutionally incorporated with the diamond network of host Ge sites. Also X-ray magnetic circular dichroism spectra at Mn L2,3-edges showed that doped Mn has local spin moment with the 3d5 electronic configuration above room temperature, meaning that the ferromagnetism originates from doped Mn2+ ions.

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