Vertical growth of Mn:Ge nanowires and their magnetic properties

Ungkil Kim, Tae Eon Park, Il Soo Kim, Han Kyu Seong, Myuong Ha Kim, Yong Hee Park, Joonyeon Chang, Jae Gwan Park, Heon Jin Choi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report on synthesis of Mn-doped Ge nanowires and their magnetic and electrical properties. The vertically aligned Mn:Ge nanowires wer grown on the germanium substrate by vapor-liquid-solid mechanism using Au as catalyst and GeCl4 and MnCl2 as precursor. Anomalous X-ray scattering measurement makes it clear that Mn atoms are substitutionally incorporated with the diamond network of host Ge sites. Also X-ray magnetic circular dichroism spectra at Mn L2,3-edges showed that doped Mn has local spin moment with the 3d5 electronic configuration above room temperature, meaning that the ferromagnetism originates from doped Mn2+ ions.

Original languageEnglish
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages1169-1170
Number of pages2
DOIs
Publication statusPublished - 2010 May 5
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: 2010 Jan 32010 Jan 8

Publication series

NameINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Other

Other2010 3rd International Nanoelectronics Conference, INEC 2010
CountryChina
CityHongkong
Period10/1/310/1/8

Fingerprint

Nanowires
Magnetic properties
Ferromagnetism
Dichroism
X ray scattering
Germanium
Diamonds
Electric properties
Vapors
X rays
Atoms
Catalysts
Ions
Liquids
Substrates
Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Kim, U., Park, T. E., Kim, I. S., Seong, H. K., Kim, M. H., Park, Y. H., ... Choi, H. J. (2010). Vertical growth of Mn:Ge nanowires and their magnetic properties. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 1169-1170). [5424969] (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5424969
Kim, Ungkil ; Park, Tae Eon ; Kim, Il Soo ; Seong, Han Kyu ; Kim, Myuong Ha ; Park, Yong Hee ; Chang, Joonyeon ; Park, Jae Gwan ; Choi, Heon Jin. / Vertical growth of Mn:Ge nanowires and their magnetic properties. INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. pp. 1169-1170 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).
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abstract = "We report on synthesis of Mn-doped Ge nanowires and their magnetic and electrical properties. The vertically aligned Mn:Ge nanowires wer grown on the germanium substrate by vapor-liquid-solid mechanism using Au as catalyst and GeCl4 and MnCl2 as precursor. Anomalous X-ray scattering measurement makes it clear that Mn atoms are substitutionally incorporated with the diamond network of host Ge sites. Also X-ray magnetic circular dichroism spectra at Mn L2,3-edges showed that doped Mn has local spin moment with the 3d5 electronic configuration above room temperature, meaning that the ferromagnetism originates from doped Mn2+ ions.",
author = "Ungkil Kim and Park, {Tae Eon} and Kim, {Il Soo} and Seong, {Han Kyu} and Kim, {Myuong Ha} and Park, {Yong Hee} and Joonyeon Chang and Park, {Jae Gwan} and Choi, {Heon Jin}",
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Kim, U, Park, TE, Kim, IS, Seong, HK, Kim, MH, Park, YH, Chang, J, Park, JG & Choi, HJ 2010, Vertical growth of Mn:Ge nanowires and their magnetic properties. in INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings., 5424969, INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings, pp. 1169-1170, 2010 3rd International Nanoelectronics Conference, INEC 2010, Hongkong, China, 10/1/3. https://doi.org/10.1109/INEC.2010.5424969

Vertical growth of Mn:Ge nanowires and their magnetic properties. / Kim, Ungkil; Park, Tae Eon; Kim, Il Soo; Seong, Han Kyu; Kim, Myuong Ha; Park, Yong Hee; Chang, Joonyeon; Park, Jae Gwan; Choi, Heon Jin.

INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 1169-1170 5424969 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - We report on synthesis of Mn-doped Ge nanowires and their magnetic and electrical properties. The vertically aligned Mn:Ge nanowires wer grown on the germanium substrate by vapor-liquid-solid mechanism using Au as catalyst and GeCl4 and MnCl2 as precursor. Anomalous X-ray scattering measurement makes it clear that Mn atoms are substitutionally incorporated with the diamond network of host Ge sites. Also X-ray magnetic circular dichroism spectra at Mn L2,3-edges showed that doped Mn has local spin moment with the 3d5 electronic configuration above room temperature, meaning that the ferromagnetism originates from doped Mn2+ ions.

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Kim U, Park TE, Kim IS, Seong HK, Kim MH, Park YH et al. Vertical growth of Mn:Ge nanowires and their magnetic properties. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 1169-1170. 5424969. (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5424969