Abstract
We report on synthesis of Mn-doped Ge nanowires and their magnetic and electrical properties. The vertically aligned Mn:Ge nanowires wer grown on the germanium substrate by vapor-liquid-solid mechanism using Au as catalyst and GeCl4 and MnCl2 as precursor. Anomalous X-ray scattering measurement makes it clear that Mn atoms are substitutionally incorporated with the diamond network of host Ge sites. Also X-ray magnetic circular dichroism spectra at Mn L2,3-edges showed that doped Mn has local spin moment with the 3d5 electronic configuration above room temperature, meaning that the ferromagnetism originates from doped Mn2+ ions.
| Original language | English |
|---|---|
| Title of host publication | INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings |
| Pages | 1169-1170 |
| Number of pages | 2 |
| DOIs | |
| Publication status | Published - 2010 May 5 |
| Event | 2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China Duration: 2010 Jan 3 → 2010 Jan 8 |
Publication series
| Name | INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings |
|---|
Other
| Other | 2010 3rd International Nanoelectronics Conference, INEC 2010 |
|---|---|
| Country | China |
| City | Hongkong |
| Period | 10/1/3 → 10/1/8 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
Cite this
}
Vertical growth of Mn:Ge nanowires and their magnetic properties. / Kim, Ungkil; Park, Tae Eon; Kim, Il Soo; Seong, Han Kyu; Kim, Myuong Ha; Park, Yong Hee; Chang, Joonyeon; Park, Jae Gwan; Choi, Heon Jin.
INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 1169-1170 5424969 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Vertical growth of Mn:Ge nanowires and their magnetic properties
AU - Kim, Ungkil
AU - Park, Tae Eon
AU - Kim, Il Soo
AU - Seong, Han Kyu
AU - Kim, Myuong Ha
AU - Park, Yong Hee
AU - Chang, Joonyeon
AU - Park, Jae Gwan
AU - Choi, Heon Jin
PY - 2010/5/5
Y1 - 2010/5/5
N2 - We report on synthesis of Mn-doped Ge nanowires and their magnetic and electrical properties. The vertically aligned Mn:Ge nanowires wer grown on the germanium substrate by vapor-liquid-solid mechanism using Au as catalyst and GeCl4 and MnCl2 as precursor. Anomalous X-ray scattering measurement makes it clear that Mn atoms are substitutionally incorporated with the diamond network of host Ge sites. Also X-ray magnetic circular dichroism spectra at Mn L2,3-edges showed that doped Mn has local spin moment with the 3d5 electronic configuration above room temperature, meaning that the ferromagnetism originates from doped Mn2+ ions.
AB - We report on synthesis of Mn-doped Ge nanowires and their magnetic and electrical properties. The vertically aligned Mn:Ge nanowires wer grown on the germanium substrate by vapor-liquid-solid mechanism using Au as catalyst and GeCl4 and MnCl2 as precursor. Anomalous X-ray scattering measurement makes it clear that Mn atoms are substitutionally incorporated with the diamond network of host Ge sites. Also X-ray magnetic circular dichroism spectra at Mn L2,3-edges showed that doped Mn has local spin moment with the 3d5 electronic configuration above room temperature, meaning that the ferromagnetism originates from doped Mn2+ ions.
UR - http://www.scopus.com/inward/record.url?scp=77951659182&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77951659182&partnerID=8YFLogxK
U2 - 10.1109/INEC.2010.5424969
DO - 10.1109/INEC.2010.5424969
M3 - Conference contribution
AN - SCOPUS:77951659182
SN - 9781424435449
T3 - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
SP - 1169
EP - 1170
BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
ER -