Vertical growth of Mn:Ge nanowires and their magnetic properties

Ungkil Kim, Tae Eon Park, Il Soo Kim, Han Kyu Seong, Myuong Ha Kim, Yong Hee Park, Joonyeon Chang, Jae Gwan Park, Heon Jin Choi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report on synthesis of Mn-doped Ge nanowires and their magnetic and electrical properties. The vertically aligned Mn:Ge nanowires wer grown on the germanium substrate by vapor-liquid-solid mechanism using Au as catalyst and GeCl4 and MnCl2 as precursor. Anomalous X-ray scattering measurement makes it clear that Mn atoms are substitutionally incorporated with the diamond network of host Ge sites. Also X-ray magnetic circular dichroism spectra at Mn L2,3-edges showed that doped Mn has local spin moment with the 3d5 electronic configuration above room temperature, meaning that the ferromagnetism originates from doped Mn2+ ions.

Original languageEnglish
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages1169-1170
Number of pages2
DOIs
Publication statusPublished - 2010
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: 2010 Jan 32010 Jan 8

Publication series

NameINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Other

Other2010 3rd International Nanoelectronics Conference, INEC 2010
CountryChina
CityHongkong
Period10/1/310/1/8

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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