The formation of a vertically and laterally self-aligned double layer of CdSe colloidal nanocrystals (NCs) in a nanopatterned dielectric layer on Si substrate was demonstrated by a repeating dip-coating process for NC deposition and atomic layer deposition (ALD) of Al2 O3 layer. A nanopatterned SiO2 /Si substrate was formed by patterning with a self-assembled diblock copolymer. After the selective deposition of the first NC layer inside the SiO2 nanopattern by dip-coating, an Al2 O 3 interdielectric layer and the second NC layer in the Al2 O3 nanopattern were sequentially deposited. The capacitance-voltage measurement of an Al-gate/ALD- Al2 O3 (25 nm) /second-CdSe-NCs/ ALD-Al2 O3 (2 nm) /first-CdSe -NCs/nanopatterned- SiO2 (15 nm) /p-Si substrate structure showed the flatband voltage shift through the charge transport between the gate and NCs.
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering