Vertically and laterally self-aligned double layer of nanocrystals in nanopatterned dielectric layer for nanocrystal floating gate memory device

Quanli Hu, Tae Kwang Eom, Soo Hyun Kim, Hyung Jun Kim, Hyun Ho Lee, Yong Sang Kim, Du Yeol Ryu, Ki Bum Kim, Tae Sik Yoon

Research output: Contribution to journalArticle

8 Citations (Scopus)


The formation of a vertically and laterally self-aligned double layer of CdSe colloidal nanocrystals (NCs) in a nanopatterned dielectric layer on Si substrate was demonstrated by a repeating dip-coating process for NC deposition and atomic layer deposition (ALD) of Al2 O3 layer. A nanopatterned SiO2 /Si substrate was formed by patterning with a self-assembled diblock copolymer. After the selective deposition of the first NC layer inside the SiO2 nanopattern by dip-coating, an Al2 O 3 interdielectric layer and the second NC layer in the Al2 O3 nanopattern were sequentially deposited. The capacitance-voltage measurement of an Al-gate/ALD- Al2 O3 (25 nm) /second-CdSe-NCs/ ALD-Al2 O3 (2 nm) /first-CdSe -NCs/nanopatterned- SiO2 (15 nm) /p-Si substrate structure showed the flatband voltage shift through the charge transport between the gate and NCs.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Issue number11
Publication statusPublished - 2010 Sep 20


All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrical and Electronic Engineering
  • Electrochemistry

Cite this