Vertically Graded Oxygen Deficiency for Improving Electrical Characteristics and Stability of Indium Gallium Zinc Oxide Thin-Film Transistors

Chan Sic Yoon; Hyung Tae Kim; Min Seong Kim; Hyukjoon Yoo; Jeong Woo Park; Dong Hyun Choi; Dongwoo Kim; Hyun Jae Kim

doi:10.1021/acsami.0c15017

Vertically Graded Oxygen Deficiency for Improving Electrical Characteristics and Stability of Indium Gallium Zinc Oxide Thin-Film Transistors

Chan Sic Yoon, Hyung Tae Kim, Min Seong Kim, Hyukjoon Yoo, Jeong Woo Park, Dong Hyun Choi, Dongwoo Kim, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

We investigated a facile fabrication method, which is an insertion of a carrier-induced interlayer (CII) between the oxygen-rich a-IGZO channel and the gate insulator to improve the electrical characteristics and stability of amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs). The a-IGZO channel is deposited with additional oxygen gas flow during a-IGZO channel deposition to improve the stability of the a-IGZO TFTs. The CII is a less than 10 nm thick deposited thin film that acts to absorb the oxygen from the a-IGZO front channel through oxidation. Through oxidation of the CII, the oxygen concentration of the a-IGZO front channel is decreased compared to that of the oxygen-rich back channel, which forms a vertically graded oxygen deficiency (VGO) in the a-IGZO channel. Therefore, the electrical characteristics of the VGO TFTs are improved by increasing the carrier concentration of the front channel as the oxygen vacancy concentration in the front channel is increased through the oxidation of the CII. At the same time, the stability of the VGO TFTs is improved by maintaining a high oxygen concentration in the back channel even after oxidation of the CII. The field-effect mobility (μFET) of the VGO TFTs improved compared to that of the a-IGZO TFTs from 7.16 ± 0.6 to 12.0 ± 0.7 cm2/V·s. The threshold voltage (Vth) shifts under positive bias temperature stress and negative bias temperature illumination stress decreased from 6.00 to 2.95 V and -15.58 to -8.99 V, respectively.

Original language	English
Pages (from-to)	4110-4116
Number of pages	7
Journal	ACS Applied Materials and Interfaces
Volume	13
Issue number	3
DOIs	https://doi.org/10.1021/acsami.0c15017
Publication status	Published - 2021 Jan 27

Bibliographical note

Funding Information:
This work was supported in part by Samsung Display and in part by the Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT under grant 2018M3A7B4071521.

Publisher Copyright:
© 2021 American Chemical Society. All rights reserved.

All Science Journal Classification (ASJC) codes

Materials Science(all)

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10.1021/acsami.0c15017

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title = "Vertically Graded Oxygen Deficiency for Improving Electrical Characteristics and Stability of Indium Gallium Zinc Oxide Thin-Film Transistors",

abstract = "We investigated a facile fabrication method, which is an insertion of a carrier-induced interlayer (CII) between the oxygen-rich a-IGZO channel and the gate insulator to improve the electrical characteristics and stability of amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs). The a-IGZO channel is deposited with additional oxygen gas flow during a-IGZO channel deposition to improve the stability of the a-IGZO TFTs. The CII is a less than 10 nm thick deposited thin film that acts to absorb the oxygen from the a-IGZO front channel through oxidation. Through oxidation of the CII, the oxygen concentration of the a-IGZO front channel is decreased compared to that of the oxygen-rich back channel, which forms a vertically graded oxygen deficiency (VGO) in the a-IGZO channel. Therefore, the electrical characteristics of the VGO TFTs are improved by increasing the carrier concentration of the front channel as the oxygen vacancy concentration in the front channel is increased through the oxidation of the CII. At the same time, the stability of the VGO TFTs is improved by maintaining a high oxygen concentration in the back channel even after oxidation of the CII. The field-effect mobility (μFET) of the VGO TFTs improved compared to that of the a-IGZO TFTs from 7.16 ± 0.6 to 12.0 ± 0.7 cm2/V·s. The threshold voltage (Vth) shifts under positive bias temperature stress and negative bias temperature illumination stress decreased from 6.00 to 2.95 V and -15.58 to -8.99 V, respectively.",

author = "Yoon, {Chan Sic} and Kim, {Hyung Tae} and Kim, {Min Seong} and Hyukjoon Yoo and Park, {Jeong Woo} and Choi, {Dong Hyun} and Dongwoo Kim and Kim, {Hyun Jae}",

note = "Funding Information: This work was supported in part by Samsung Display and in part by the Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT under grant 2018M3A7B4071521. Publisher Copyright: {\textcopyright} 2021 American Chemical Society. All rights reserved.",

year = "2021",

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doi = "10.1021/acsami.0c15017",

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T1 - Vertically Graded Oxygen Deficiency for Improving Electrical Characteristics and Stability of Indium Gallium Zinc Oxide Thin-Film Transistors

AU - Yoon, Chan Sic

AU - Kim, Hyung Tae

AU - Kim, Min Seong

AU - Yoo, Hyukjoon

AU - Park, Jeong Woo

AU - Choi, Dong Hyun

AU - Kim, Dongwoo

AU - Kim, Hyun Jae

N1 - Funding Information: This work was supported in part by Samsung Display and in part by the Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT under grant 2018M3A7B4071521. Publisher Copyright: © 2021 American Chemical Society. All rights reserved.

PY - 2021/1/27

Y1 - 2021/1/27

N2 - We investigated a facile fabrication method, which is an insertion of a carrier-induced interlayer (CII) between the oxygen-rich a-IGZO channel and the gate insulator to improve the electrical characteristics and stability of amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs). The a-IGZO channel is deposited with additional oxygen gas flow during a-IGZO channel deposition to improve the stability of the a-IGZO TFTs. The CII is a less than 10 nm thick deposited thin film that acts to absorb the oxygen from the a-IGZO front channel through oxidation. Through oxidation of the CII, the oxygen concentration of the a-IGZO front channel is decreased compared to that of the oxygen-rich back channel, which forms a vertically graded oxygen deficiency (VGO) in the a-IGZO channel. Therefore, the electrical characteristics of the VGO TFTs are improved by increasing the carrier concentration of the front channel as the oxygen vacancy concentration in the front channel is increased through the oxidation of the CII. At the same time, the stability of the VGO TFTs is improved by maintaining a high oxygen concentration in the back channel even after oxidation of the CII. The field-effect mobility (μFET) of the VGO TFTs improved compared to that of the a-IGZO TFTs from 7.16 ± 0.6 to 12.0 ± 0.7 cm2/V·s. The threshold voltage (Vth) shifts under positive bias temperature stress and negative bias temperature illumination stress decreased from 6.00 to 2.95 V and -15.58 to -8.99 V, respectively.

AB - We investigated a facile fabrication method, which is an insertion of a carrier-induced interlayer (CII) between the oxygen-rich a-IGZO channel and the gate insulator to improve the electrical characteristics and stability of amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs). The a-IGZO channel is deposited with additional oxygen gas flow during a-IGZO channel deposition to improve the stability of the a-IGZO TFTs. The CII is a less than 10 nm thick deposited thin film that acts to absorb the oxygen from the a-IGZO front channel through oxidation. Through oxidation of the CII, the oxygen concentration of the a-IGZO front channel is decreased compared to that of the oxygen-rich back channel, which forms a vertically graded oxygen deficiency (VGO) in the a-IGZO channel. Therefore, the electrical characteristics of the VGO TFTs are improved by increasing the carrier concentration of the front channel as the oxygen vacancy concentration in the front channel is increased through the oxidation of the CII. At the same time, the stability of the VGO TFTs is improved by maintaining a high oxygen concentration in the back channel even after oxidation of the CII. The field-effect mobility (μFET) of the VGO TFTs improved compared to that of the a-IGZO TFTs from 7.16 ± 0.6 to 12.0 ± 0.7 cm2/V·s. The threshold voltage (Vth) shifts under positive bias temperature stress and negative bias temperature illumination stress decreased from 6.00 to 2.95 V and -15.58 to -8.99 V, respectively.

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JO - ACS applied materials & interfaces

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Vertically Graded Oxygen Deficiency for Improving Electrical Characteristics and Stability of Indium Gallium Zinc Oxide Thin-Film Transistors

Abstract

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